NXP MRFE6VS25GNR1

부품 포인트

• The MRFE6VS25GNR1 chip is a high-power RF LDMOS transistor designed for use in high-performance RF applications. It operates at a frequency range of 1.8-600 MHz, with an output power of up to 44 dBm. The chip features high gain and efficiency, making it ideal for applications such as RF power amplifiers in communication systems.

• Equivalent

  The equivalent products of MRFE6VS25GNR1 chip are MRFE6VS25N and MRFE6VS25NR1, both featuring the same operating frequency range, output power, and other specifications as the original MRFE6VS25GNR1 chip.

• Features

  The MRFE6VS25GNR1 is a high-power RF transistor designed for use in HF and VHF applications. It features a high output power of 270W, high efficiency, and excellent linearity. It is designed for ruggedness and reliability in high-power amplifiers.

• Pinout

  The MRFE6VS25GNR1 is a 1800W CW average power N-channel RF power Field Effect Transistor (FET) with a maximum frequency of 500 MHz. It has a 211-pin ceramic-metal seal package with five input and five output ports, as well as gate, drain, and source connections.

• Manufacturer

  The manufacturer of MRFE6VS25GNR1 is NXP Semiconductors. NXP Semiconductors is a Dutch semiconductor manufacturer that produces a wide range of products including microcontrollers, connectivity solutions, RF components, and secure identification solutions. They specialize in providing technology solutions for industries such as automotive, industrial, consumer electronics, and security.

• Application Field

  The MRFE6VS25GNR1 is commonly used in industrial, scientific, and medical (ISM) applications such as plasma generation, MRI machines, and RF heating systems. It is also used in high-power linear amplifiers, radar systems, and radio transmitters for communication purposes.

• Package

  The MRFE6VS25GNR1 chip is in a ceramic package with a flange. It is in the form of a surface-mount device. The chip size is 14.993mm x 11.73mm x 4.8mm.