주문 금액이
$5000ON FQD2N100TM
Transistor MOSFET, N-channel type, designed for operation at 1 kilovolt with a current rating of 1
브랜드: ON
제조업체부품 #: FQD2N100TM
데이터 시트: FQD2N100TM 데이터 시트 (PDF)
패키지/케이스: TO-252
RoHS 상태:
재고상태: 6,043 PC, 새로운 원본
상품 유형: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*모든 가격은 USD 단위입니다.
수량 | 단가 | 추가 가격 |
---|---|---|
1 | $0.785 | $0.785 |
10 | $0.656 | $6.560 |
30 | $0.593 | $17.790 |
100 | $0.529 | $52.900 |
500 | $0.423 | $211.500 |
1000 | $0.404 | $404.000 |
재고: 6,043 PCS
FQD2N100TM 일반적인 설명
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
특징
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: DPAK-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds Breakdown Voltage: 1 kV
Continuous Drain Current: 1.6 A
Rds On - Drain-Source On-Resistance: 7.1 Ohms
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 15.5 nC
Minimum Operating Temperature: -55°C
Maximum Operating Temperature: +150°C
Pd - Power Dissipation: 2.5 W
Fall Time: 35 ns
Forward Transconductance - Min: 1.9 S
Rise Time: 30 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 13 ns
애플리케이션
- Lighting
명세서
매개변수 | 값 | 매개변수 | 값 |
---|---|---|---|
Status | Active | CAD Models | |
Compliance | PbAHP | Package Type | DPAK-3 / TO-252-3 |
Case Outline | 369AS | MSL Type | 1 |
MSL Temp (°C) | 260 | Container Type | REEL |
Container Qty. | 2500 | ON Target | N |
Channel Polarity | N-Channel | Configuration | Single |
V(BR)DSS Min (V) | 1000 | VGS Max (V) | ±30 |
VGS(th) Max (V) | 5 | ID Max (A) | 1.6 |
PD Max (W) | 50 | RDS(on) Max @ VGS = 2.5 V (mΩ) | - |
RDS(on) Max @ VGS = 4.5 V (mΩ) | - | RDS(on) Max @ VGS = 10 V (mΩ) | 9000 |
Qg Typ @ VGS = 4.5 V (nC) | - | Qg Typ @ VGS = 10 V (nC) | 12 |
Ciss Typ (pF) | 400 | Pricing ($/Unit) | $0.4213Sample |
feature-category | Power MOSFET | feature-material | |
feature-process-technology | DMOS | feature-configuration | Single |
feature-channel-mode | Enhancement | feature-channel-type | N |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 1000 |
feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | 5 |
feature-maximum-continuous-drain-current-a | 1.6 | feature-maximum-drain-source-resistance-mohm | 9000@10V |
feature-typical-gate-charge-vgs-nc | 12@10V | feature-typical-gate-charge-10v-nc | 12 |
feature-typical-input-capacitance-vds-pf | 400@25V | feature-typical-output-capacitance-pf | 40 |
feature-maximum-power-dissipation-mw | 2500 | feature-packaging | Tape and Reel |
feature-rad-hard | feature-pin-count | 3 | |
feature-supplier-package | DPAK | feature-standard-package-name1 | TO-252 |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | Yes | feature-svhc-exceeds-threshold | Yes |
Series | QFET® | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000 V | Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 9Ohm @ 800mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
배송
배송 유형 | 배송비 | 리드타임 | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
---|---|---|
은행 송금 | US$30.00의 은행 수수료를 부과합니다. | |
페이팔 | 4.0%의 서비스 수수료를 부과합니다. | |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. | |
웨스턴 유니언 | charge US.00 banking fee. | |
돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The FQD2N100TM chip is a power mosfet designed for high-speed switching applications. it is commonly used in power management circuits and motor control systems. the chip offers low on-resistance, high current capacity, and a compact package for easy integration into electronic designs. it provides efficient and reliable performance, making it suitable for a wide range of applications in various industries.
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Equivalent
Some equivalent products of the FQD2N100TM chip include irf630tm, ntd2n100ctg, and stp7n10tm. these are all n-channel mosfet transistors with similar specifications and performance characteristics. -
Features
The features of FQD2N100TM include low on-resistance, fast switching speed, high power dissipation capability, and a durable, compact package design. -
Pinout
The FQD2N100TM is a mosfet transistor with a to-252 package. it has a pin count of 3, including a drain pin, a source pin, and a gate pin. the drain pin is used to connect to the high side of the load, the source pin connects to the low side of the load, and the gate pin controls the switching operation of the transistor. -
Manufacturer
The manufacturer of the FQD2N100TM is fairchild semiconductor. it is a company that specializes in the design, development, and production of a wide range of semiconductor solutions for various markets including automotive, industrial, consumer electronics, and telecommunications. -
Application Field
The FQD2N100TM is a power mosfet transistor commonly used in applications requiring high power switching, such as motor control, power supplies, and lighting systems. it can also be utilized in audio amplifiers and other industrial applications that require high voltage and current capabilities. -
Package
The FQD2N100TM chip has a to-252 (dpak) package type, a vertical dmos (vdmos) form, and a size of 6.3mm x 6.2mm.
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
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우리는 풍부한 제품을 보유하고 있으며 귀하의 다양한 요구를 충족시킬 수 있습니다.
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최소 주문 수량은 1개부터입니다.
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최저 국제 배송비는 $0.00부터 시작됩니다
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모든 제품에 대해 365일 품질 보증