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ON FDS6612A

Name: FDS6612A
Rating: 4.5 (6 reviews)

N-Channel 30 V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

브랜드: ON Semiconductor, LLC

제조업체부품 #: FDS6612A

데이터 시트: FDS6612A Datasheet (PDF)

패키지/케이스: SOIC-8

상품 유형: 트랜지스터

RoHS 상태:

재고상태: 2188 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

BOM에 추가

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. FDS6612A 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

수량^*

이메일^*

담당자 이름^*

회사

주목

FDS6612A 일반적인 설명

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

특징

8.4 A, 30 V
R_DS(ON) = 22 mΩ @ V_GS = 10 V
R_DS(ON) = 30 mΩ @ V_GS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability

애플리케이션

This product is general usage and suitable for many different applications.

명세서

매개변수	값	매개변수	값
Source Content uid	FDS6612A	Pbfree Code	Yes
Part Life Cycle Code	Active	Ihs Manufacturer	ONSEMI
Package Description	SOP-8	Manufacturer Package Code	751EB
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Factory Lead Time	4 Weeks
Samacsys Manufacturer	onsemi	Additional Feature	LOGIC LEVEL COMPATIBLE
Application	SWITCHING	Configuration	SINGLE WITH BUILT-IN DIODE
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON	feature-category	Power MOSFET
feature-material		feature-process-technology	TMOS
feature-configuration	Single Quad Drain Triple Source	feature-channel-mode	Enhancement
feature-channel-type	N	feature-number-of-elements-per-chip	1
feature-maximum-drain-source-voltage-v	30	feature-maximum-gate-source-voltage-v	±20
feature-maximum-gate-threshold-voltage-v		feature-maximum-continuous-drain-current-a	8.4
feature-maximum-drain-source-resistance-mohm	22@10V	feature-typical-gate-charge-vgs-nc	5.4@5V
feature-typical-gate-charge-10v-nc		feature-typical-input-capacitance-vds-pf	560@15V
feature-typical-output-capacitance-pf		feature-maximum-power-dissipation-mw	2500
feature-packaging	Tape and Reel	feature-rad-hard
feature-pin-count	8	feature-supplier-package	SOIC
feature-standard-package-name1	SO	feature-cecc-qualified	No
feature-esd-protection		feature-military	No
feature-aec-qualified	No	feature-aec-qualified-number
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc	No
feature-svhc-exceeds-threshold	No

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The FDS6612A chip is a power MOSFET transistor designed for low voltage applications. It has a low on-resistance and is capable of handling high currents. The chip can be used in various electronic devices where efficient power switching is required, such as power management circuits, motor control, and battery protection circuits.
Equivalent

There are no direct equivalent products to the FDS6612A chip. However, some possible alternatives that offer similar functionality include the IRLML2402, IRLML6401, and IRLML6402 chips. It is recommended to consult the datasheets of these chips to determine if they meet the specific requirements of your application.
Features

The FDS6612A is a small signal N-channel MOSFET transistor. It has a low on-resistance of 2.6 ohms and a maximum drain current of 3.7A. The device is designed for applications where low voltage, high speed, and low power dissipation are important factors.
Pinout

The FDS6612A is a dual N-channel PowerTrench MOSFET with a pin count of 8. The pins serve the following functions: pin 1 is the drain of MOSFET 1, pin 2 is the gate of MOSFET 1, pin 3 is the source of MOSFET 1, pin 4 is the gate of MOSFET 2, pin 5 is the drain of MOSFET 2, pin 6 is the source of MOSFET 2, pin 7 is connected internally, and pin 8 is the exposed thermal pad.
Manufacturer

The manufacturer of the FDS6612A is Fairchild Semiconductor. It is an American company that specializes in the design, development, and production of a wide range of semiconductor devices.
Application Field

The FDS6612A is a power MOSFET transistor designed for use in low voltage applications such as battery chargers, power management circuits, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for various applications where efficient power handling is required.
Package

The FDS6612A chip has a small outline package (SOP) type, with a form of surface mount equipment (SMT). It has a size of 8 pins.