ON FDS89161
Mosfet Array 100V 2.7A 1.6W Surface Mount 8-SOIC
FDS89161 일반적인 설명
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
특징
- Shielded Gate MOSFET Technology
- Max rDS(on) = 105 mΩat VGS= 10 V, ID = 2.7 A
- Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS Compliant
애플리케이션
- This product is general usage and suitable for many different applications.
- Synchronous Rectifier
- Primary Switch for Bridge Topology
명세서
매개변수 | 값 | 매개변수 | 값 |
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Source Content uid | FDS89161 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | SOP-8 | Manufacturer Package Code | 751EB |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 24 Weeks | Samacsys Manufacturer | onsemi |
Application | SWITCHING | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
Moisture Sensitivity Level | 1 | Number of Elements | 2 |
Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Element Material | SILICON | feature-category | Power MOSFET |
feature-material | feature-process-technology | TMOS | |
feature-configuration | Dual Dual Drain | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 2 |
feature-maximum-drain-source-voltage-v | 100 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 2.7 | |
feature-maximum-drain-source-resistance-mohm | 105@10V | feature-typical-gate-charge-vgs-nc | 3@10V|1.7@5V |
feature-typical-gate-charge-10v-nc | 3 | feature-typical-input-capacitance-vds-pf | 158@50V |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 1600 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 8 | feature-supplier-package | SOIC |
feature-standard-package-name1 | SO | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
배송
배송 유형 | 배송비 | 리드타임 | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
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은행 송금 | US$30.00의 은행 수수료를 부과합니다. | |
페이팔 | 4.0%의 서비스 수수료를 부과합니다. | |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. | |
웨스턴 유니언 | charge US.00 banking fee. | |
돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The FDS89161 chip is a high-performance integrated circuit designed for use in various electronic devices. It offers advanced features such as low power consumption, high-speed data processing, and compatibility with different communication protocols. The chip's versatility and efficiency make it suitable for applications in areas like consumer electronics, automotive systems, and industrial control.
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Features
The FDS89161 is a semiconductor device designed for power management solutions. It features a low on-resistance, allowing for efficient power delivery. It also has a low gate charge, making it suitable for fast switching applications. Additionally, it offers a small package size, enabling space-saving designs. -
Pinout
The FDS89161 is a dual N-channel PowerTrench MOSFET with a pin count of 8. Its functions include providing low on-resistance and high-speed switching capabilities in applications such as power management circuits, motor drives, and load switches. -
Manufacturer
The manufacturer of the FDS89161 is Fairchild Semiconductor. Fairchild Semiconductor is a global company that designs, develops, and manufactures semiconductor products. They specialize in power and signal path products for various applications in automotive, industrial, and consumer markets. -
Application Field
The FDS89161 is a high-voltage power MOSFET designed for applications requiring efficient power switching in a small yet robust package. With a high drain-source breakdown voltage and low on-resistance, it is commonly used in a variety of applications such as motor control, power supplies, LED lighting, and battery charging circuits. -
Package
The FDS89161 chip is available in a package type of QFN (Quad Flat No-Lead), with a form factor of 6x6mm and a size of 36 mm².
데이터 시트 PDF
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
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우리는 풍부한 제품을 보유하고 있으며 귀하의 다양한 요구를 충족시킬 수 있습니다.
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최소 주문 수량은 1개부터입니다.
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최저 국제 배송비는 $0.00부터 시작됩니다
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모든 제품에 대해 365일 품질 보증
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