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ON FQB5N90TM

Name: FQB5N90TM
Rating: 4.5 (5 reviews)

N-Channel 900 V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount TO-263 (D2PAK)

브랜드: ON Semiconductor, LLC

제조업체부품 #: FQB5N90TM

데이터 시트: FQB5N90TM Datasheet (PDF)

패키지/케이스: TO-263

상품 유형: 트랜지스터

RoHS 상태:

재고상태: 3404 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

BOM에 추가

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. FQB5N90TM 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

수량^*

이메일^*

담당자 이름^*

회사

주목

FQB5N90TM 일반적인 설명

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

특징

5.4A, 900V, R_DS(on) = 2.3Ω(Max.) @V_GS = 10 V, I_D = 2.7A
Low gate charge ( Typ. 31nC)
Low C_rss ( Typ. 13pF)
100% avalanche tested
RoHS compliant

애플리케이션

Lighting

명세서

매개변수	값	매개변수	값
Source Content uid	FQB5N90TM	Pbfree Code	Yes
Part Life Cycle Code	Active	Ihs Manufacturer	ONSEMI
Package Description	D2PAK-3	Manufacturer Package Code	418AJ
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	51 Weeks	Samacsys Manufacturer	onsemi
Avalanche Energy Rating (Eas)	660 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	900 V
Drain Current-Max (ID)	5.4 A	Drain-source On Resistance-Max	2.3 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	158 W	Pulsed Drain Current-Max (IDM)	21.6 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
feature-category	Power MOSFET	feature-material
feature-process-technology	DMOS	feature-configuration	Single
feature-channel-mode	Enhancement	feature-channel-type	N
feature-number-of-elements-per-chip	1	feature-maximum-drain-source-voltage-v	900
feature-maximum-gate-source-voltage-v	±30	feature-maximum-gate-threshold-voltage-v	5
feature-maximum-continuous-drain-current-a	5.4	feature-maximum-drain-source-resistance-mohm	2300@10V
feature-typical-gate-charge-vgs-nc	31@10V	feature-typical-gate-charge-10v-nc	31
feature-typical-input-capacitance-vds-pf	1200@25V	feature-typical-output-capacitance-pf
feature-maximum-power-dissipation-mw	3130	feature-packaging	Tape and Reel
feature-rad-hard		feature-pin-count	3
feature-supplier-package	D2PAK	feature-standard-package-name1	TO-263
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	Yes

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The FQB5N90TM chip is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications. It offers a low on-resistance, allowing efficient power handling, and has high reliability and robustness. The chip's advanced features and performance make it suitable for applications such as power supplies, motor control, and audio amplification.
Features

The FQB5N90TM is a power MOSFET transistor with a drain-source voltage rating of 900V and a continuous drain current of 5A. It has a low gate charge and high switching speed, making it suitable for high-frequency applications. The transistor also has a low on-resistance and low capacitance, enabling efficient power management.
Pinout

The FQB5N90TM is a MOSFET transistor with 3 pins. The pin-out configuration is Gate (G), Drain (D), and Source (S). The Gate pin is used to control the flow of current between the Drain and Source pins.
Manufacturer

The manufacturer of the FQB5N90TM is Fairchild Semiconductor. It is a semiconductor company that designs, manufactures, and markets a wide range of power semiconductors, discrete semiconductors, and integrated circuits.
Application Field

The FQB5N90TM is a power MOSFET transistor commonly used in high-voltage applications such as switch-mode power supplies, motor control, and lighting. Its high voltage rating and low on-state resistance make it suitable for various power conversion and control circuits that require efficient and reliable operation.
Package

The FQB5N90TM chip is available in a TO-263 package type, commonly known as a D2PAK form. Its dimensions or size fall within the standard specifications for a TO-263 package, measuring approximately 10.28mm x 15.27mm x 4.57mm.