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SOT227-4
(총 101개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| IXKN45N80C | 0.074ohm Drain-Source On-Resistance | IXYS | 9,458 | BOM에 추가 |
| IXFN80N50P | 0N50P" in English: | Littelfuse | 5,598 | BOM에 추가 |
| IXFN180N20 | Silicon-based N-channel MOSFET, optimized for power transmission up to 200 volts and 180 amperes, contained within a 4-pin SOT-227B package | Littelfuse | 9,458 | BOM에 추가 |
| IXFN50N80Q2 | N-Channel Silicon Metal-oxide Semiconductor FET | Ixys | 9,458 | BOM에 추가 |
| IXFN44N60 | IXFN44N60: A Silicon-based N-Channel Power Field-Effect Transistor operating at 44A Drain Current and 600V Voltage, exhibiting an On-Resistance of 0 | Littelfuse | 9,458 | BOM에 추가 |
| APT8015JVR | APT8015JVR is a N-channel MOSFET with specifications including 800 volts maximum voltage | Microchip | 9,458 | BOM에 추가 |
| IXFN82N60Q3 | Ideal for industrial control systems, motor drives, and power supplies, this HiPerFET Pwr MOSFET offers superior reliability and efficienc | IXYS | 9,458 | BOM에 추가 |
| IXFN48N50Q | Discrete Semiconductor Modules with a 48 Amps and 500V rating, featuring 0.1 Rds | Littelfuse | 5,948 | BOM에 추가 |
| APT20M22JVR | End of Life projected: 2048-10-03 | Microchip Technology | 2,177 | BOM에 추가 |
| APT5010JN | POWER MOSFET TRANSISTOR APT5010JN | MICROCHIP TECHNOLOGY INC | 9,747 | BOM에 추가 |
| APT50M65JFLL | Channel 500V 58A Power MOSFET in SOT-227 Package | Microchip | 6,647 | BOM에 추가 |
| MSC040SMA120J | MSC040SMA120J is a Silicon Carbide (SiC) N-channel MOSFET with a voltage rating of 1 | Microchip | 9,458 | BOM에 추가 |
| MSC025SMA120J | Described as a Power Field-Effect Transistor, this component has a current rating of 77A and is designed to operate at a voltage of 1200V | Microchip | 9,458 | BOM에 추가 |
| MSC017SMA120J | Discrete Semiconductor Modules MOSFET SIC 1200 V 17 mOhm SOT-227 | Microchip | 9,458 | BOM에 추가 |
| IXFN120N65X2 | Description: IXFN120N65X2 MOSFET with N-Channel, rated at 650 Volts and 108 Amperes | IXYS | 9,458 | BOM에 추가 |
| IXTN102N65X2 | Automotive Grade N-Channel MOSFET with 650V Voltage Rating | IXYS | 9,458 | BOM에 추가 |
| IXFN110N60P3 | Product IXFN110N60P3 is a N-channel MOSFET with a maximum voltage rating of 600V and a current rating of 90A, suitable for power applications up to 1 | IXYS | 9,458 | BOM에 추가 |
| IXFN32N120 | 1.2KV N-channel Silicon Transistor MOSFET with a 32A rating in a 4-pin SOT-227B package | IXYS | 6,861 | BOM에 추가 |
| IXTN40P50P | Trans MOSFET P-CH 500V 40A 4-Pin SOT-227B | IXYS | 9,458 | BOM에 추가 |
| IXTN200N10L2 | The IXTNLis designed for rugged reliability in harsh environments and demanding system | IXYS | 9,458 | BOM에 추가 |
| IXFN48N50 | Designed in compliance with RoHS regulations | Littelfuse | 7,188 | BOM에 추가 |
| IXFN210N20P | Durable and compact IXFNP for harsh environment condition | Littelfuse | 8,548 | BOM에 추가 |
| IXFN230N20T | IXFN230N20T MOSFETs come in the SOT-227B package and are ROHS-compliant | Littelfuse | 9,458 | BOM에 추가 |
| IXFN300N10P | High Current Switching Device | IXYS | 9,458 | BOM에 추가 |
| IXFN55N50 | 500V N-channel MOSFET with 55A current rating, SOT-227B package | IXYS | 9,458 | BOM에 추가 |
| IXFN24N100 | N-channel MOSFET IXFN24N100 in SOT-227B form factor | IXYS | 9,458 | BOM에 추가 |
| IXFN34N80 | SOT-227B MOSFETs IXFN34N80 | IXYS | 9,458 | BOM에 추가 |
| IXFN180N10 | Trans MOSFET N-CH Si 100V 180A 4-Pin SOT-227B | IXYS | 9,458 | BOM에 추가 |
| IXFN180N25T | Trans MOSFET N-CH 250V 168A 4-Pin SOT-227B | IXYS | 9,458 | BOM에 추가 |
| IXFN44N50 | With a voltage tolerance of 500 volts and a current capability of 44 amperes | Littelfuse | 8,124 | BOM에 추가 |
| IXFN44N100P | Trans MOSFET N-CH 1KV 37A 4-Pin SOT-227B | IXYS | 9,458 | BOM에 추가 |
| IXFN360N10T | N-type MOSFET IXFN360N10T: Capable of handling currents up to 360 amps at 100 volts, suitable for various power electronics applications | Littelfuse | 9,458 | BOM에 추가 |
| IXFN26N90 | ROHS SOT-227B MOSFETs IXFN26N90 | Littelfuse | 9,466 | BOM에 추가 |
| IXFN180N15P | Trans MOSFET N-CH 150V 150A 4-Pin SOT-227B | IXYS | 9,458 | BOM에 추가 |
| IXFN48N60P | High-power MOSFET suitable for industrial and automotive applications | IXYS | 9,458 | BOM에 추가 |
| IXFN44N80P | Silicon Metal-oxide Semiconductor FET | IXYS | 9,458 | BOM에 추가 |
| IXFN36N60 | The product IXFN36N60 consists of individual semiconductor modules capable of handling 600 volts and 36 amps | IXYS | 6,542 | BOM에 추가 |
| IXFN60N60 | Discrete Semiconductor Modules 600V 60A | Littelfuse | 8,126 | BOM에 추가 |
| APT2X101DQ100J | Ultrafast Rectifier Diode with Soft Recovery at 1000V | Microchip | 8,402 | BOM에 추가 |
| APT50M50JVFR | High voltage switching component | Microchip | 6,305 | BOM에 추가 |
| APT2X61D100J | Rectifier Module - Fast Recovery/FRED | Microchip | 5,480 | BOM에 추가 |
| APT2X101D100J | High voltage diode with ultrafast switching capabilities for improved performance | Microchip | 7,047 | BOM에 추가 |
| APT2X100DQ120J | Advanced design enables smooth transition from forward to reverse bias operation | Microchip | 6,070 | BOM에 추가 |
| APT10M07JVR | Microchip Technology APT10M07JVR | Microchip | 8,244 | BOM에 추가 |
| APT2X101D60J | Diode Array 2 Independent 600 V 100A Chassis Mount SOT-227-4, miniBLOC | Microchip | 6,236 | BOM에 추가 |
| APT10M07JVFR | APT10M07JVFR FREDFET MOS5 Discrete Semiconductor Module: With a 100V voltage tolerance and a mere 7 mOhm on-resistance | Microchip | 9,458 | BOM에 추가 |
| APT8015JVFR | ISOTOP encapsulated single transistor module with 800V voltage rating, screw mount, capable of delivering up to 44A current and 700W power | Microchip | 8,602 | BOM에 추가 |
| APT50M50JFLL | Robust and Efficient Semiconductors for Industrial Automation | microchip | 7,569 | BOM에 추가 |
| GA200SA60S | IC FET Dual Bus Switch 24TSSOP | Vishay | 7,894 | BOM에 추가 |
| APT60GT60JRD | N-Channel Transistor with Voltage Rating and A Current Capability ( character | Microchip | 5,075 | BOM에 추가 |
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