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SOT227-4
(총 101개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| APT12040JVR | Described as APT12040JVR, this MOSFET operates at 1 | Microchip | 7,754 | BOM에 추가 |
| IXTN210P10T | High-power P-channel MOSFET suitable for applications requiring high voltage and current | Littelfuse | 5,780 | BOM에 추가 |
| IXFN120N20 | certified SOT-227B MOSFETs | Littelfuse | 5,849 | BOM에 추가 |
| IXFN130N30 | Information on SOT-227B MOSFETs ROHS | IXYS CORP | 9,174 | BOM에 추가 |
| IXFN60N80P | 4-pin SOT-227B, IXYS IXFN60N80P N-channel MOSFET Transistor & Diode, 800V, 53A | Littelfuse | 9,458 | BOM에 추가 |
| IXFN400N15X3 | MOSFETs in SOT-227B package, meeting ROHS requirements, known as IXFN400N15X3 | IXYS | 9,458 | BOM에 추가 |
| APT2X61S20J | Diode Array 2 Independent 200 V 75A Chassis Mount ISOTOP | Microchip Technology | 7,075 | BOM에 추가 |
| APT2X101S20J | Schottky Diodes & Rectifiers SCHOTTKY Discrete Rectifier 200 V 100 A Dual Parallel SOT-227 | Microchip Technology | 5,634 | BOM에 추가 |
| IXTN62N50L | IXTN62N50L Power MOSFET | IXYS | 9,458 | BOM에 추가 |
| IXFN360N15T2 | N-channel MOSFET with a 150V rating and 310A current capacity in a SOT227B package | IXYS | 9,458 | BOM에 추가 |
| IXFN48N50U2 | N-channel MOSFET rated at 500 volts and 48 amps, packaged in SOT-227B | IXYS | 6,466 | BOM에 추가 |
| IXFN55N50F | High-Performance IXFN55N50F 500V Semiconductor Module | IXYS | 9,458 | BOM에 추가 |
| IXFN80N50Q2 | Discrete semiconductor module with 80 Amps, 500V, and 0.06 Rds | IXYS | 9,458 | BOM에 추가 |
| IXFN320N17T2 | High-performance MOSFETs that feature a SOT-227B package and meet ROHS standards | IXYS | 9,458 | BOM에 추가 |
| APT8030JVFR | APT8030JVFR - 800V 30 Ohm FREDFET MOSFET Module in SOT-227 Package | Microchip | 9,458 | BOM에 추가 |
| APT2X61DC120J | SiC Power Rectifier Module | Microchip | 9,458 | BOM에 추가 |
| APT10025JVR | Perfect for designers seeking a reliable and efficient solution for DC-DC conversion, motor control, or other high-current application | Microchip | 5,580 | BOM에 추가 |
| APT10050JN | SOT-227 N-Channel MOSFET, 1KV, 20.5A | microchip | 9,394 | BOM에 추가 |
| APT10025JVFR | High-efficiency power transistor | Microchip | 9,458 | BOM에 추가 |
| APT10026JN | High-voltage N-channel MOSFET transistor with 33A current capacity, packaged in a 4-pin SOT-227 enclosure | microchip | 9,101 | BOM에 추가 |
| APT8011JFLL | 4-Pin SOT-227 N-Channel 800V 51A Trans MOSFET | Microchip | 9,458 | BOM에 추가 |
| GA200SA60UP | High power dissipation capability of 500,000mW | vishay | 8,796 | BOM에 추가 |
| GA200SA60SP | GA200SA60SP: Insulated Gate Bipolar Transistor (IGBT) Module, N-Channel, 600 Volts, 342 Amps, 781 Kilowatts | vishay | 7,044 | BOM에 추가 |
| VS-GA250SA60S | Specifications: VS-GA250SA60S is a robust IGBT module designed for demanding tasks | Vishay General Semiconductor - Diodes Division | 7,946 | BOM에 추가 |
| GA100NA60U | Ultrafast IGBT Transistors (GA100NA60U) Designed for High-Side Chopper Circuits (600V) | vishay | 5,124 | BOM에 추가 |
| GB75DA120UP | ROHS Compliant Package-4 Insulated Gate Bipolar Transistor | vishay | 9,182 | BOM에 추가 |
| IXFN70N120SK | Reliable and robust for demanding power management need | IXYS | 9,458 | BOM에 추가 |
| IXFN50N120SK | Advanced power conversion technology for high-reliability applications | IXYS | 9,458 | BOM에 추가 |
| APT75GP120J | IGBT Module for N-Channel Transistor with 1200V Rating | Microchip | 5,516 | BOM에 추가 |
| IXTN21N100 | 21 Amps and 100V rated discrete semiconductor modules with a resistance of 0.55 Ohm for optimal performance | Ixys | 6,569 | BOM에 추가 |
| IXTN30N100L | 227B Trans MOSFET N-Channel 1KV 30A | Ixys | 5,630 | BOM에 추가 |
| IXFN50N50 | With a 50 Amps capacity and 500V rating, the IXFN50N50 Discrete Semiconductor Module has a low 0.1 Ohm Rds | Ixys | 6,569 | BOM에 추가 |
| GA100NA60UP | 600V 50A IGBT Transistors | Vishay | 5,442 | BOM에 추가 |
| DBA200UA60 | Mounted Diode Array Offering 2 Independent Channels for 600 V 100A Operations | Sanrex | 7,765 | BOM에 추가 |
| IXFN150N15 | N-Channel 150 V 150A (Tc) 600W (Tc) Chassis Mount SOT-227B | IXYS | 9,458 | BOM에 추가 |
| IXTN79N20 | N-Channel 200 V 85A (Tc) 400W (Tc) Chassis Mount SOT-227B | IXYS CORP | 6,904 | BOM에 추가 |
| IXFN21N100Q | With a 21 Amps rating, 1000V voltage capability, and low Rds of 0.5, IXFN21N100Q is a reliable discrete semiconductor module | Littelfuse | 7,142 | BOM에 추가 |
| IXFN80N50 | IXFN80N50 SOT-227B MOSFETs ROHS | Littelfuse | 3,725 | BOM에 추가 |
| APT2X61DQ100J | Diode Switching 1KV 60A SOT-227 4-Pin | Microchip | 2,559 | BOM에 추가 |
| APT8024JLL | ISOTOP, 0.24 ohm, 29A, 800V | Microchip | 7,022 | BOM에 추가 |
| TGHGCR0100FE | Precise control of current flow with minimal distortion | Ohmite | 2,002 | BOM에 추가 |
| TGHGCR1000FE | Robust design ensures reliable operation even under heavy load | Ohmite | 6,527 | BOM에 추가 |
| IXFN520N075T2 | Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET | Ixys | 4,941 | BOM에 추가 |
| IXFN240N15T2 | High-voltage switching solution for efficient power contro | Ixys | 7,730 | BOM에 추가 |
| TGHGCR0200FE | High-precision thermal resistor for precise temperature sensin | Ohmite | 2,877 | BOM에 추가 |
| TGHGCR0020FE | Robust current measurement at high load | Ohmite | 2,629 | BOM에 추가 |
| TGHGCR0010FE | This through-hole resistor offers precise sensing and reliable operation under heavy loads | Ohmite | 2,811 | BOM에 추가 |
| TGHGCR0500FE | 50 mOhms ±1% 100W Thick Film Chassis Mount Resistor | Ohmite | 7,915 | BOM에 추가 |
| TGHGCR0005FE | 500 µOhms ±1% 100W Thick Film Chassis Mount Resistor | Ohmite | 2,510 | BOM에 추가 |
| IXFN70N100X | X-Class Hiperfet Power MOSFET | IXYS | 9,458 | BOM에 추가 |
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