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NXP FGH60N60

Name: FGH60N60
Rating: 4.5 (10 reviews)

Enjoy hassle-free returns on the FGH60N60SMD IGBT, ensuring customer satisfaction for a worry-free purchase

브랜드: Nxp

제조업체부품 #: FGH60N60

데이터 시트: FGH60N60 데이터 시트 (PDF)

패키지/케이스:

RoHS 상태:

재고상태: 2,526 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. FGH60N60 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

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회사

주목

FGH60N60 일반적인 설명

The FGH60N60SMD is a specific IGBT (Insulated Gate Bipolar Transistor) device from ON Semiconductor that utilizes novel Field Stop technology. It is designed for high-voltage and high-current applications, and it offers specific features and characteristics tailored to various power electronics applications.

특징

Technology: The FGH60N60SMD uses Field Stop IGBT technology, which is known for offering improved performance in terms of lower conduction and switching losses. This makes it suitable for a range of applications, including solar inverters, UPS (Uninterruptible Power Supplies), welders, telecom equipment, energy storage systems (ESS), and power factor correction (PFC) circuits.

Maximum Junction Temperature (TJ): The device is designed to operate at a maximum junction temperature of 175°C, which indicates its ability to handle high-temperature environments.

Positive Temperature Coefficient: This IGBT exhibits a positive temperature coefficient, which simplifies parallel operation in circuits. It means that as the temperature increases, the device's current-carrying capability also increases.

High Current Capability: The FGH60N60SMD is capable of handling high currents, with a specified current rating of 60 amperes.

Low Saturation Voltage: The collector-emitter saturation voltage (VCE(sat)) is specified as 1.9 volts (typical) at a collector current (IC) of 60 amperes. This low saturation voltage indicates efficient switching performance with minimal power loss.

High Input Impedance: High input impedance is desirable in power electronics because it minimizes the loading effect on the driving circuit.

Fast Switching: The device offers fast switching characteristics with a specified switching energy (EOFF) of 7.5 µJ per ampere. Fast switching is important for reducing switching losses.

Tightened Parameter Distribution: This suggests that the device has closely controlled and consistent performance parameters, which can be crucial for applications where precision and reliability are required.

명세서

매개변수	값	매개변수	값
Product Name	FGH60N60	Product Type	Insulated Gate Bipolar Transistor (IGBT)
Manufacturer	Fairchild Semiconductor (Now part of ON Semiconductor)	Transistor Type	N-Channel
Collector-Emitter Voltage (Vces)	600V	Collector Current (Ic)	60A
Vce(sat) (Saturation Voltage)	1.7V (typical)	Gate Threshold Voltage (Vth)	2.8V (max)
Operating Temperature Range	-55°C to +175°C	Package / Case	TO-247
Packaging	Tube, Tray, and other options

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The FGH60N60 is a high-voltage, high-speed, Insulated Gate Bipolar Transistor (IGBT) chip designed for use in power electronics applications. It offers low conduction and switching losses, making it suitable for high frequency and high power applications such as motor control, inverters, and welding systems.
Equivalent

Equivalent products of FGH60N60 chip are Infineon's FGA60N60, Fairchild's FDPF60N60, and Toshiba's TK60E06N1. These products are IGBT modules with similar specifications and performance characteristics suitable for a wide range of power electronics applications.
Features

1. FGH60N60 is a 600V, 60A IGBT Module. 2. It has a low saturation voltage of 1.9V. 3. It is designed for high power switching applications. 4. FGH60N60 has a low switching loss and high efficiency. 5. It is suitable for use in inverters, motor control, and power supplies.
Pinout

The FGH60N60 is an IGBT module with a pin count of 7. It consists of 3 collector emitter pins, 2 gate emitter pins, 1 gate collector pin, and 1 collector gate pin. The function of this module is to control the flow of current in high-power applications, such as motor control and power supplies.
Manufacturer

FGH60N60 is manufactured by Infineon Technologies, a leading semiconductor manufacturer specializing in power electronics, automotive, industrial, and digital security solutions. Infineon delivers efficient, reliable, and sustainable semiconductor technologies for a wide range of applications, including energy generation, transmission, and conversion.
Application Field

The FGH60N60 is commonly used in applications requiring high-power and high-speed switching, such as in motor control, inverter systems, UPS systems, and welding equipment. This IGBT module can also be found in renewable energy systems, induction heating, and other industrial power electronics applications.
Package

The FGH60N60 chip comes in a TO-247 package type, with a single form of TO-247-3. The size of the chip is approximately 15.75mm x 19.3mm x 5.84mm.