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ON FCPF11N60F
N-Channel 600 V 11A (Tc) 36W (Tc) Through Hole TO-220F-3
FCPF11N60F 일반적인 설명
SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super-FET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
특징
- 600 V @ TJ = 150°C
- Typ. RDS(on) = 320 mΩ
- Fast Recovery Type (trr = 120 ns)
- Ultra Low Gate Charge (Typ. Qg = 40 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
- 100% Avalanche Tested
- RoHS compliant
애플리케이션
- AC-DC Power Supplies
명세서
| 매개변수 | 값 | 매개변수 | 값 |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 11 A |
| Rds On - Drain-Source Resistance: | 380 mOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | Qg - Gate Charge: | 52 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 125 W | Channel Mode: | Enhancement |
| Tradename: | SuperFET FRFET | Series: | FCPF11N60F |
| Packaging: | Tube | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 56 ns |
| Forward Transconductance - Min: | 9.7 S | Height: | 16.07 mm |
| Length: | 10.36 mm | Product Type: | MOSFET |
| Rise Time: | 98 ns | Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Type: | N-Channel MOSFET | Typical Turn-Off Delay Time: | 119 ns |
| Typical Turn-On Delay Time: | 34 ns | Width: | 4.9 mm |
| Unit Weight: | 0.068784 oz | feature-category | Power MOSFET |
| feature-material | feature-process-technology | SuperFET | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 600 | feature-maximum-gate-source-voltage-v | ±30 |
| feature-maximum-gate-threshold-voltage-v | 5 | feature-maximum-continuous-drain-current-a | 11 |
| feature-maximum-drain-source-resistance-mohm | 380@10V | feature-typical-gate-charge-vgs-nc | 40@10V |
| feature-typical-gate-charge-10v-nc | 40 | feature-typical-input-capacitance-vds-pf | 1148@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 36000 | |
| feature-packaging | Tube | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | TO-220FP |
| feature-standard-package-name1 | TO | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
배송
| 배송 유형 | 배송비 | 리드타임 | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 |
 |
페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
 |
등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
| 지불 조건 | 핸드 수수료 | |
|---|---|---|
 |
은행 송금 | US$30.00의 은행 수수료를 부과합니다. |
 |
페이팔 | 4.0%의 서비스 수수료를 부과합니다. |
 |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. |
 |
웨스턴 유니언 | charge US.00 banking fee. |
 |
돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
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포장
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단계1 :제품
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단계4 :개별 포장
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단계5 :포장 상자
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부품 포인트
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FCPF11N60F is a MOSFET chip primarily used for power switching applications. It can handle a maximum voltage of 600V and a continuous drain current of 11A. This chip is designed for efficient power conversion and features low on-resistance, high-speed switching capabilities, and low gate charge. It also includes built-in protection features such as over-temperature and short-circuit protection.
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Equivalent
There are currently no direct equivalent products to the FCPF11N60F chip. However, similar alternatives with comparable specifications and performance can be found from other manufacturers, such as Infineon's CoolMOS, Fairchild's SuperFET, or ON Semiconductor's High Voltage Power MOSFETs. -
Features
The FCPF11N60F is a power MOSFET with a drain-source voltage rating of 600V and a current rating of 11A. It features low on-resistance, fast switching speed, and high avalanche energy capability. It is housed in a TO-220F package, making it suitable for various industrial and consumer applications requiring high-performance power switching. -
Pinout
The FCPF11N60F is a power MOSFET with a pin count of 3. The three pins are Gate, Source, and Drain. The Gate pin controls the switching of the MOSFET, while the Source and Drain pins control the flow of current through the device. -
Manufacturer
The manufacturer of the FCPF11N60F is Fairchild Semiconductor. It is a global company that specializes in the design, development, and production of power semiconductors and integrated circuits. -
Application Field
The FCPF11N60F is a high-voltage Power MOSFET suitable for various applications, including power supplies, motor control, DC-DC converters, and inverters. -
Package
The FCPF11N60F chip is available in a TO-220F package type, has a single form, and its size is approximately 10.16mm x 3.81mm x 20.57mm.
데이터 시트 PDF
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모든 제품에 대해 365일 품질 보증
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