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SOT-363-6
(총 208개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| DMC3400SDW-7 | N/P-Channel MOSFET Transistor with 30V Voltage and 0.65A/0.45A Current in 6-Pin SOT-363 Configuration | Diodes Incorporated | 6,000 | BOM에 추가 |
| MGA-61563-TR1G | Amplifies RF signals with 16.6 dB gain | Broadcom Limited | 6,111 | BOM에 추가 |
| DMG1016UDW-7 | N-Channel and P-Channel Silicon FET | Diodes Incorporated | 18,000 | BOM에 추가 |
| BAS70TW-7-F | Ultra-fast switching capability makes it ideal for power supplies | Diodes Incorporated | 8,731 | BOM에 추가 |
| BCR183S | BCR183S offers pre-biased bipolar transistors for streamlined circuit assembly and operation | Infineon | 3,333 | BOM에 추가 |
| SI1869DH-T1-E3 | The SI1869DH-T1-E3 is a surface mount load switch with level-shift capability, designed for a voltage rating of 20V and a current rating of 1.2A | Vishay | 9,458 | BOM에 추가 |
| NTJD5121NT2G | MOSFET NFET SC88D 60V 295mA | onsemi | 9,458 | BOM에 추가 |
| SBC847BDW1T1G | Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 | onsemi | 9,458 | BOM에 추가 |
| ABA-53563-TR1G | High Gain RF Amplifier | AVAGO | 5,556 | BOM에 추가 |
| MGA-82563-BLKG | Ideal for use in wireless infrastructure equipment, such as base stations and access point | Broadcom Limited | 9,354 | BOM에 추가 |
| BCM857BS-7-F | This product is a PNP-type Bipolar Junction Transistor suitable for general-purpose electronic applications | Diodes Incorporated | 9,458 | BOM에 추가 |
| DMN5L06DWK-7 | Mosfet Array 50V 305mA 250mW Surface Mount SOT-363 | Diodes Incorporated | 9,458 | BOM에 추가 |
| UM6K1NTN | High-power dual N-channel MOSFET array for robust circuitr | Rohm Semiconductor | 9,331 | BOM에 추가 |
| SI1988DH-T1-E3 | MOSFET Recommended Alternative SI1922EDH-T1-GE3 | Vishay | 9,458 | BOM에 추가 |
| AG203-63G | Gain of 20dB at 900MHz RF Amplifier for Frequencies up to 6000MHz | qorvo | 6,244 | BOM에 추가 |
| UMD5NTR | NPN/PNP complementary pair transistor with high voltage and current capabiliti | Rohm Semiconductor | 5,136 | BOM에 추가 |
| SGA0363Z | Silicon Germanium Technology for Low Noise Figure | qorvo | 6,667 | BOM에 추가 |
| SGA3563Z | The SGA3563Z amplifier is a versatile device with a single function, making it ideal for a variety of applications | Qorvo | 9,458 | BOM에 추가 |
| RF3024TR7 | Rapid frequency tuning with low power consumption | Murata | 9,458 | BOM에 추가 |
| MGA-62563-TR1G | High Gain RF Amplifier with 3V Input Voltage and 22 dB Amplification | Broadcom Limited | 9,222 | BOM에 추가 |
| MGA-68563-TR1G | Boost your RF signal with this GaAs driver amplifier RFIC" | Broadcom Limited | 7,788 | BOM에 추가 |
| AG303-63G | Small-sized Op-Amp with ROHS compliance | QORVO | 6,667 | BOM에 추가 |
| ABA-54563-BLKG | Amplifier for radio frequency signals up to 3.4 GHz with 23 dB amplification | Broadcom Limited | 9,742 | BOM에 추가 |
| ABA-31563-TR1G | DC - 3.5 GHz RF Amplifier providing 21.5dB of amplification | Broadcom Limited | 6,536 | BOM에 추가 |
| 74LVC2G14GW,125 | Dual inverting Schmitt trigger with 5 V tolerant input | Nexperia | 7,365 | BOM에 추가 |
| UMD2NTR | NPN and PNP dual digital transistor with built-in bias resistor, in SOT-363 package | Rohm Semiconductor | 8,082 | BOM에 추가 |
| UMD12NTR | Specifications: Pack includes 1 NPN and 1 PNP transistors, suitable for various digital applications | Rohm Semiconductor | 5,585 | BOM에 추가 |
| MGA-62563-BLKG | Ultra-low noise PHEMT-based amp for 6-24 GHz applications | Broadcom Limited | 5,684 | BOM에 추가 |
| MGA-61563-BLKG | Wide Band Low Power Amplifier, 100MHz Min, 6000MHz Max, GAAS | Broadcom Limited | 7,499 | BOM에 추가 |
| MCH6660-TL-W | 1.8V Drive MOSFET Pair for P-Channel and N-Channel Applications | onsemi | 9,458 | BOM에 추가 |
| SI1926DL-T1-E3 | High performance N Channel MOSFET | Vishay | 5,908 | BOM에 추가 |
| SI1869DH-T1-GE3 | Load Switch with Level-Shift | Vishay | 9,458 | BOM에 추가 |
| SI1411DH-T1-GE3 | P-Channel 150 V (D-S) MOSFET | VISHAY INTERTECHNOLOGY INC | 8,223 | BOM에 추가 |
| SI1965DH-T1-GE3 | Dual P-Channel 12 V 390 mO 1.7 nC Power Mosfet - SOT-363 | Vishay | 9,458 | BOM에 추가 |
| SI1443EDH-T1-GE3 | Surface Mount Transistor | Vishay | 6,805 | BOM에 추가 |
| SI1902CDL-T1-GE3 | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | Vishay | 9,458 | BOM에 추가 |
| SI1553CDL-T1-GE3 | N / P-Channel 20 V 0.39/0.85 O Power Mosfet - SOT-363 (SC-70-6) | Vishay | 9,458 | BOM에 추가 |
| SI1539CDL-T1-BE3 | Premium quality component for high-reliability electronics project | Vishay | 9,458 | BOM에 추가 |
| SI1539CDL-T1-GE3 | Specifications: 30 Volts, 0.7 Amps, 0.34 Watts | Vishay | 5,521 | BOM에 추가 |
| SI1480DH-T1-GE3 | 2.6A Drain Current | Vishay | 9,458 | BOM에 추가 |
| SI1427EDH-T1-GE3 | Advanced power management solution with compact design and high reliability | Vishay | 9,458 | BOM에 추가 |
| MUN5314DW1T1G | Tape and Reel Packaging: Supplied in tape and reel format, the MUN5314DW1T1G facilitates automated assembly processes for mass production | onsemi | 9,458 | BOM에 추가 |
| NLAST4599DFT2G | 1 Circuit IC Switch 2:1 25Ohm SC-88/SC70-6/SOT-363 | onsemi | 9,458 | BOM에 추가 |
| BC856BDW1T1G | Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 | onsemi | 9,458 | BOM에 추가 |
| MUN5235DW1T1G | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 | onsemi | 9,458 | BOM에 추가 |
| MUN5233DW1T1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN | onsemi | 9,458 | BOM에 추가 |
| MUN5214DW1T1G | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V | onsemi | 9,458 | BOM에 추가 |
| MUN5211DW1T1G | The MUN5211DW1T1G is a Surface-Mounted Technology (SMT) component | onsemi | 9,458 | BOM에 추가 |
| SMUN5111DW1T1G | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363 | onsemi | 9,458 | BOM에 추가 |
| SBC857BDW1T1G | Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 | onsemi | 9,458 | BOM에 추가 |
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