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ST NAND512R3A2DZA6E

Name: NAND512R3A2DZA6E
Rating: 4.5 (10 reviews)

High-performance storage solution for demanding application

브랜드: STMicroelectronics, Inc

제조업체부품 #: NAND512R3A2DZA6E

데이터 시트: NAND512R3A2DZA6E Datasheet (PDF)

패키지/케이스: BGA-63

상품 유형: 메모리

RoHS 상태:

재고상태: 3,065 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. NAND512R3A2DZA6E 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

수량^*

이메일^*

담당자 이름^*

회사

주목

NAND512R3A2DZA6E 일반적인 설명

The NAND512R3A2DZA6E from Micron Technology is a powerful NAND Flash memory device with a capacity of 512 megabytes. It operates on a 3.3 volt power supply and is designed with memory blocks and pages for efficient data storage. With a synchronous interface and a maximum clock frequency of 50 MHz, this device offers lightning-fast data transfer speeds. Its support for features such as random read/write operations, hardware data protection, and error correction codes ensures the integrity of stored data. This makes it an ideal choice for solid-state drives, smartphones, tablets, and other consumer electronics devices where high-density storage and low power consumption are critical. The NAND512R3A2DZA6E is built for reliable performance and durability, making it suitable for use in high-demand environments

특징

It has a storage capacity of 512 megabytes (MB).
It uses a NAND flash memory architecture, which allows for fast read and write speeds.
It uses a 3.3 volt power supply.
It has a small form factor and is surface-mountable.
It has a maximum operating temperature range of -40°C to 85°C.

애플리케이션

S34ML04G200TFI000 from Cypress Semiconductor
MT29F512G08CKCABH6-IT from Micron Technology
K9GBG08U0M-PCB0 from Samsung Electronics

명세서

매개변수	값	매개변수	값
Rohs Code	Yes	Part Life Cycle Code	Obsolete
Ihs Manufacturer	MICRON TECHNOLOGY INC	Part Package Code	BGA
Package Description	9 X 11 MM, 1.05 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63	Pin Count	63
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8542.32.00.51	Samacsys Manufacturer	Micron
Access Time-Max	15000 ns	Command User Interface	YES
Data Polling	NO	JESD-30 Code	R-PBGA-B63
JESD-609 Code	e1	Length	11 mm
Memory Density	536870912 bit	Memory IC Type	FLASH
Memory Width	8	Number of Functions	1
Number of Sectors/Size	4K	Number of Terminals	63
Number of Words	67108864 words	Number of Words Code	64000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	64MX8
Package Body Material	PLASTIC/EPOXY	Package Code	TFBGA
Package Equivalence Code	BGA63,10X12,32	Package Shape	RECTANGULAR
Package Style	GRID ARRAY, THIN PROFILE, FINE PITCH	Page Size	512 words
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Programming Voltage	1.8 V	Qualification Status	Not Qualified
Ready/Busy	YES	Seated Height-Max	1.05 mm
Sector Size	16K	Standby Current-Max	0.00005 A
Supply Current-Max	0.02 mA	Supply Voltage-Max (Vsup)	1.95 V
Supply Voltage-Min (Vsup)	1.7 V	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form	BALL	Terminal Pitch	0.8 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	30
Toggle Bit	NO	Type	SLC NAND TYPE
Width	9 mm

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The NAND512R3A2DZA6E chip is a 512Mb NAND flash memory device that is commonly used in products such as smartphones, tablets, and other electronic devices. It offers high storage capacity with fast read and write speeds, making it ideal for applications that require large amounts of data storage.
Equivalent

The equivalent products of NAND512R3A2DZA6E chip are MT29F512G08CMCABH5-6IT, K9F5608U0D-J, IS42S16320F-7TLI, and W25N05JVA6.
Features

NAND512R3A2DZA6E is a NAND flash memory chip with 512Gb capacity, 3.3V voltage, x8 I/O interface, and A6E package. It features high density storage, fast read/write speeds, and high reliability for a variety of storage applications.
Pinout

The NAND512R3A2DZA6E is a 48-pin NAND flash memory device with a capacity of 512Mb. It is typically used for data storage in electronic devices. The pin functions include data input/output, address input, control signals, and power supply connections.
Manufacturer

The manufacturer of the NAND512R3A2DZA6E is Micron Technology, Inc. Micron is a multinational corporation specializing in computer memory and data storage technology. They produce a wide range of products including dynamic random-access memory (DRAM), flash memory, and solid-state drives (SSDs) for various applications in the computer and electronics industry.
Application Field

The NAND512R3A2DZA6E is commonly used in applications such as solid state drives (SSDs), digital cameras, portable media players, and gaming consoles for data storage and memory expansion. Its high capacity of 512 gigabytes and fast data transfer speeds make it suitable for a wide range of consumer electronics devices.
Package

The NAND512R3A2DZA6E chip is available in a BGA package type with a form factor of 14x18 mm. It has a capacity of 512 Mb (64 MB) with an organization of 4 banks x 16 M x 8 pages x 2048 bytes.