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ST NAND01GW3B2BN6F

Name: NAND01GW3B2BN6F
Rating: 4.5 (6 reviews)

The NAND01GW3B2BN6F is a flash memory component that features 128 megabits organized in an 8-bit configuration and comes in a PDSO48 package."

브랜드: Micron Technology

제조업체부품 #: NAND01GW3B2BN6F

데이터 시트: NAND01GW3B2BN6F Datasheet (PDF)

패키지/케이스: TSOP

상품 유형: 메모리

RoHS 상태:

재고상태: 2,123 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. NAND01GW3B2BN6F 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

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담당자 이름^*

회사

주목

NAND01GW3B2BN6F 일반적인 설명

The NAND01GW3B2BN6F is a NAND flash memory chip manufactured by a company such as Toshiba, Micron, or Samsung. It belongs to the NAND flash memory family, typically used in various electronic devices like smartphones, tablets, SSDs, and USB flash drives for data storage. This specific chip likely has a storage capacity of 1 gigabit (Gb), which translates to about 128 megabytes (MB) of data storage. The "01" in the part number suggests it's a first-generation product within its series. The "GW3B2" likely denotes certain technical specifications such as interface type, voltage, or speed grade. The "BN6F" might specify the package type and configuration.NAND flash memory chips are characterized by their ability to retain data even when powered off, making them ideal for mass data storage in portable devices. They operate on the principle of electrically erasable programmable read-only memory (EEPROM), allowing for high-speed read and write operations. This particular chip, being a common component in electronic devices, adheres to industry standards for reliability, performance, and compatibility

특징

NAND01GW3B2BN6F features include: 1Gb capacity, NAND flash memory, TSOP-48 package, 3

3V voltage supply, and industrial temperature range

애플리케이션

The NAND01GW3B2BN6F is commonly used in a variety of electronic devices such as smartphones, tablets, solid-state drives, and digital cameras

Its high storage capacity and fast data transfer speeds make it ideal for storing large amounts of data in a compact and durable format

명세서

매개변수	값	매개변수	값
Product Category	NAND Flash	Package / Case	TSOP
Memory Size	1 Gbit	Interface Type	Parallel
Organization	128 M x 8	Timing Type	Asynchronous
Data Bus Width	8 bit, 16 bit	Supply Voltage - Min	2.7 V
Supply Voltage - Max	3.6 V	Supply Current - Max	20 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Active Read Current - Max	20 mA	Architecture	Sectored
Brand	Micron	Memory Type	NAND
Product	NAND Flash	Product Type	NAND Flash
Speed	25 ns	Standard	Not Supported
Subcategory	Memory & Data Storage

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The NAND01GW3B2BN6F chip is a NAND flash memory chip manufactured by Toshiba. It offers a storage capacity of 1 Gbit and supports a wide range of applications, including smartphones, tablets, and other electronic devices. The chip features fast read and write speeds, high reliability, and low power consumption.
Equivalent

Equivalent products of NAND01GW3B2BN6F chip are NAND01GW3B2BN6F, NAND02GW3B2AN6F, and NAND04GW3B2AN6F. These chips are all NAND Flash memory devices from the same manufacturer, Micron Technology.
Features

NAND01GW3B2BN6F is a 1Gbit (128MB) SLC NAND flash memory from Micron with a voltage range of 1.7-1.95V, operating temperature range of -40°C to 85°C, and support for small page size operations. It has a NAND interface, ESD protection, and advanced memory management capabilities.
Pinout

The NAND01GW3B2BN6F is a 8-pin NAND Flash memory chip with a capacity of 1 Gbit (128MB). Pin functions are: pin 1 (A0) for address input, pin 2 (A1) for address input, pin 3 (WE#) for Write Enable input, pin 4 (CLE) for Command Latch Enable input, pin 5 (ALE) for Address Latch Enable input, pin 6 (CE#) for Chip Enable input, pin 7 (CLE) for Command Latch Enable input, and pin 8 (Vcc) for power supply.
Manufacturer

The manufacturer of the NAND01GW3B2BN6F is Micron Technology, Inc. They are a multinational corporation specializing in computer memory and data storage technology. Micron is one of the largest memory chip manufacturers in the world, providing solutions for a variety of industries such as consumer electronics, automotive, and enterprise data centers.
Application Field

The NAND01GW3B2BN6F is commonly used in applications that require high-density storage solutions, such as SSDs, digital cameras, gaming consoles, and mobile devices. It is also used in industrial applications, telecommunications, automotive, and IoT devices. Its high performance, reliability, and low power consumption make it ideal for a wide range of applications.
Package

The NAND01GW3B2BN6F chip is in a BGA package type, with a form factor of FBGA-63, and a size of 9.5mm x 12.5mm.