이 웹사이트는 쿠키를 사용합니다. 이 사이트를 이용함으로써 귀하는 쿠키 사용에 동의하게 됩니다. 자세한 내용은 다음을 참조하세요. 개인 정보 정책.

이미지는 참고용입니다. 제품 사양 보기

ON HUF75339P3

Name: HUF75339P3
Rating: 4.5 (6 reviews)

N-Channel 55 V 75A (Tc) 200W (Tc) Through Hole TO-220-3

브랜드: ON Semiconductor, LLC

제조업체부품 #: HUF75339P3

데이터 시트: HUF75339P3 Datasheet (PDF)

패키지/케이스: TO-220

상품 유형: 트랜지스터

RoHS 상태:

재고상태: 2229 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

BOM에 추가

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. HUF75339P3 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

수량^*

이메일^*

담당자 이름^*

회사

주목

HUF75339P3 일반적인 설명

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75339.

특징

75A, 55V
SPICE and SABER Thermal Impedance Models
Temperature Compensated PSPICE^® and SABER™ Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

애플리케이션

AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe

명세서

매개변수	값	매개변수	값
Manufacturer:	onsemi	Product Category:	MOSFET
RoHS:	Details	Technology:	Si
Mounting Style:	Through Hole	Package / Case:	TO-220-3
Transistor Polarity:	N-Channel	Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	55 V	Id - Continuous Drain Current:	75 A
Rds On - Drain-Source Resistance:	12 mOhms	Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V	Qg - Gate Charge:	130 nC
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	200 W	Channel Mode:	Enhancement
Tradename:	UltraFET	Series:	HUF75339P3
Packaging:	Tube	Brand:	onsemi / Fairchild
Configuration:	Single	Fall Time:	25 ns
Height:	16.3 mm	Length:	10.67 mm
Product Type:	MOSFET	Rise Time:	60 ns
Factory Pack Quantity:	50	Subcategory:	MOSFETs
Transistor Type:	1 N-Channel	Type:	MOSFET
Typical Turn-Off Delay Time:	20 ns	Typical Turn-On Delay Time:	15 ns
Width:	4.7 mm	Part # Aliases:	HUF75339P3_NL
Unit Weight:	0.068784 oz	feature-category	Power MOSFET
feature-material	Si	feature-process-technology	UltraFET
feature-configuration	Single	feature-channel-mode	Enhancement
feature-channel-type	N	feature-number-of-elements-per-chip	1
feature-maximum-drain-source-voltage-v	55	feature-maximum-gate-source-voltage-v	±20
feature-maximum-gate-threshold-voltage-v	4	feature-maximum-continuous-drain-current-a	75
feature-maximum-drain-source-resistance-mohm	12@10V	feature-typical-gate-charge-vgs-nc	110@20V
feature-typical-gate-charge-10v-nc		feature-typical-input-capacitance-vds-pf	2000@25V
feature-typical-output-capacitance-pf		feature-maximum-power-dissipation-mw	200000
feature-packaging	Tube	feature-rad-hard
feature-pin-count	3	feature-supplier-package	TO-220
feature-standard-package-name1	TO	feature-cecc-qualified	No
feature-esd-protection		feature-military	No
feature-aec-qualified	No	feature-aec-qualified-number
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc	Yes
feature-svhc-exceeds-threshold	No

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The HUF75339P3 is a power MOSFET chip designed for high-current applications. It provides low ON-resistance and high switching speed, making it suitable for power management and motor control circuits. The chip can handle high levels of current while minimizing power dissipation and temperature rise. Its compact size and robust construction make it an efficient choice for various electronic devices and systems.
Features

The HUF75339P3 is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 55V, a continuous drain current (ID) of 75A, and a low on-resistance (RDS(on)) of 3.9mΩ. It features a compact and space-saving package, making it suitable for various applications in power electronics such as motor control, power supplies, and inverters.
Pinout

The HUF75339P3 is a power MOSFET transistor. It has a pin count of 3. The three pins are G (gate), D (drain), and S (source), which are used for controlling the flow of current in a circuit.
Manufacturer

The manufacturer of the HUF75339P3 is ON Semiconductor. It is a global semiconductor supplier, providing a comprehensive portfolio of energy-efficient, easy-to-use products that help customers solve their unique design challenges across a wide range of applications.
Application Field

The HUF75339P3 is a MOSFET transistor that is commonly used in automotive applications such as powertrain control, electric power steering, and ignition systems. It can also be used in industrial applications that require high power switching capability, such as motor control and battery charging systems.
Package

The package type of the HUF75339P3 chip is TO-220, its form is through-hole, and the size is approximately 10.16mm x 15.87mm.