ON HUF75344G3
N-Channel 55 V 75A (Tc) 285W (Tc) Through Hole TO-247-3
HUF75344G3 일반적인 설명
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.
특징
- 75A, 55V
- Simulation Models
- Temperature Compensated PSPICE® and SABER™Models
- Thermal Impedance PSPICE and SABER Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”
애플리케이션
- Other Audio & Video
명세서
매개변수 | 값 | 매개변수 | 값 |
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Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 55 V | Id - Continuous Drain Current: | 75 A |
Rds On - Drain-Source Resistance: | 8 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 210 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 285 W | Channel Mode: | Enhancement |
Tradename: | UltraFET | Series: | HUF75344G3 |
Packaging: | Tube | Brand: | onsemi / Fairchild |
Configuration: | Single | Fall Time: | 57 ns |
Height: | 20.82 mm | Length: | 15.87 mm |
Product Type: | MOSFET | Rise Time: | 125 ns |
Factory Pack Quantity: | 450 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Type: | MOSFET |
Typical Turn-Off Delay Time: | 46 ns | Typical Turn-On Delay Time: | 13 ns |
Width: | 4.82 mm | Part # Aliases: | HUF75344G3_NL |
Unit Weight: | 0.211644 oz | feature-category | Power MOSFET |
feature-material | Si | feature-process-technology | UltraFET |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 55 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 75 |
feature-maximum-drain-source-resistance-mohm | 8@10V | feature-typical-gate-charge-vgs-nc | 175@20V |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 3200@25V | |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 285000 | |
feature-packaging | Tube | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | TO-247 |
feature-standard-package-name1 | TO | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
배송
배송 유형 | 배송비 | 리드타임 | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
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은행 송금 | US$30.00의 은행 수수료를 부과합니다. | |
페이팔 | 4.0%의 서비스 수수료를 부과합니다. | |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. | |
웨스턴 유니언 | charge US.00 banking fee. | |
돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
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포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
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부품 포인트
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The HUF75344G3 is a power MOSFET chip utilized in electronic devices for controlling and switching high current loads. It is designed to handle high voltage and current levels efficiently, serving as a reliable component in various applications such as power supplies, motor control circuits, and automotive systems. The chip's advanced features make it an integral part of electronic designs requiring robust and efficient power management.
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Features
The HUF75344G3 is a high-voltage MOSFET transistor with a low on-resistance and fast switching speed. It has a drain-source voltage rating of 55V and a continuous drain current of 75A. The transistor is designed for use in power conversion and motor control applications. -
Pinout
The HUF75344G3 is a power MOSFET with a pin count of 8. It is designed for low on-resistance and fast switching. The pin functions typically include gate, source, and drain connections for controlling the flow of current in a circuit. -
Manufacturer
The manufacturer of the HUF75344G3 is Infineon Technologies. It is a global semiconductor company that designs, manufactures, and markets a wide range of electronic components and systems. -
Application Field
The HUF75344G3 is a high voltage MOSFET that is commonly used in applications such as power supplies, motor control, lighting, and switching circuits. It can handle high voltage and current levels, making it suitable for various industrial and automotive applications. -
Package
The HUF75344G3 chip has a package type of TO-247, a form of N-Channel, and a size of 8.65mm x 19.3mm.
데이터 시트 PDF
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모든 제품에 대해 365일 품질 보증
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