주문 금액이
$5000ON NTJD4158CT1G
MOSFETs- Power and Small Signal PFET 20V .88A 1OHM
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제조업체부품 #: NTJD4158CT1G
데이터 시트: NTJD4158CT1G Datasheet (PDF)
패키지/케이스: SC-70-6
상품 유형: FET, MOSFET Arrays
NTJD4158CT1G 일반적인 설명
Whether you are designing circuitry for consumer electronics, industrial machinery, or telecommunications equipment, the NTJD4158CT1G MOSFET transistor provides the performance and reliability you need. Its complemented N and P channel configuration, along with its low on-resistance and high power dissipation capabilities, make it a versatile and efficient component for a wide range of applications. Consider incorporating the NTJD4158CT1G into your next design to benefit from its compact size, moderate power handling, and reliable operation. With its MSL 1 - Unlimited moisture sensitivity rating and compliance with SVHC regulations, this transistor is a safe and dependable choice for your projects
특징
- Low Noise and EMI Immunity
- High Temperature Operating Capability
- Wide Input Voltage Range and Overvoltage Protection
- Soft Startup and Shutdown Control for Low Inrush Current
- Economical Design with High Reliability
- SMT Package for Easy Mounting and Handling
애플리케이션
- Low Power Consumption
- Short Circuit Detection
- Thermal Management
명세서
매개변수 | 값 | 매개변수 | 값 |
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Source Content uid | NTJD4158CT1G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Part Package Code | SC-88/SC70-6/SOT-363 6 LEAD | Package Description | SC-88, SC-70, 6 PIN |
Pin Count | 6 | Manufacturer Package Code | 419B-02 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Factory Lead Time | 51 Weeks |
Samacsys Manufacturer | onsemi | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 0.25 A |
Drain-source On Resistance-Max | 2.5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 12 pF | JESD-30 Code | R-PDSO-G6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (Abs) | 0.27 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | feature-category | Small Signal |
feature-material | feature-process-technology | TMOS | |
feature-configuration | Dual | feature-channel-mode | Enhancement |
feature-channel-type | P|N | feature-number-of-elements-per-chip | 2 |
feature-maximum-drain-source-voltage-v | 20@P Channel|30@N Channel | feature-maximum-gate-source-voltage-v | ±12@P Channel|±20@N Channel |
feature-maximum-gate-threshold-voltage-v | 1.5 | feature-maximum-continuous-drain-current-a | 0.88@P Channel|0.25@N Channel |
feature-maximum-drain-source-resistance-mohm | [email protected]@P Channel|[email protected]@N Channel | feature-typical-gate-charge-vgs-nc | [email protected]@P Channel|0.9@5V@N Channel |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 155@20V@P Channel|20@5V@N Channel | |
feature-typical-output-capacitance-pf | 25@P Channel|19@N Channel | feature-maximum-power-dissipation-mw | 270 |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 6 | feature-supplier-package | SC-88 |
feature-standard-package-name1 | SOT | feature-cecc-qualified | No |
feature-esd-protection | Yes | feature-military | No |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
배송
배송 유형 | 배송비 | 리드타임 | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
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은행 송금 | US$30.00의 은행 수수료를 부과합니다. |
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페이팔 | 4.0%의 서비스 수수료를 부과합니다. |
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신용 카드 | 3.5% 서비스 수수료를 부과합니다. |
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웨스턴 유니언 | charge US.00 banking fee. |
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돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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NTJD4158CT1G is a N-channel MOSFET designed for high-speed switching applications. It features low on-resistance, high drain current capability, and low gate charge. The chip is suitable for various power management and voltage regulation applications in electronic devices.
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Equivalent
Some equivalent products of the NTJD4158CT1G chip include the NDT3055L, NDF6N40ZG, and NTMFS4C05N. These are all N-channel Power MOSFETs with similar specifications and performance characteristics, making them suitable alternatives for various applications. -
Features
NTJD4158CT1G is a Small Signal Field-Effect Transistor (FET) with a low ON resistance, high current handling capability, and high input impedance. It is designed for applications requiring high power and efficiency, such as switching circuits and low noise amplifiers. Its compact size and high performance make it ideal for use in a wide range of electronic devices. -
Pinout
The NTJD4158CT1G is a P-channel MOSFET transistor with a pin count of 3. The gate (G) pin controls the flow of current between the source (S) and drain (D) pins. The drain pin is usually connected to the positive voltage source, while the source pin is connected to the load or ground. -
Manufacturer
NTJD4158CT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor Corporation is a leading supplier of semiconductor-based solutions for a variety of electronic devices and industries, including automotive, industrial, and communications. The company specializes in providing power management, analog, and sensor products to help customers design and manufacture innovative products. -
Application Field
NTJD4158CT1G is commonly used in applications such as load switch, power management, and voltage regulation in various electronic devices like smartphones, tablets, laptops, and other portable devices. It is also used in power distribution systems, battery management, and voltage detection circuits due to its low on-resistance and high current-carrying capability. -
Package
The NTJD4158CT1G chip is available in a DPAK (TO-252) package, with a form of surface mount, and a size of 6.6mm x 6.6mm x 4.4mm.
데이터 시트 PDF
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
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우리는 풍부한 제품을 보유하고 있으며 귀하의 다양한 요구를 충족시킬 수 있습니다.
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최소 주문 수량은 1개부터입니다.
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최저 국제 배송비는 $0.00부터 시작됩니다
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모든 제품에 대해 365일 품질 보증
The parts we received exceeded our expectations in terms of quality.