주문 금액이
$5000ON NTHD3101FT1G
P-Channel ChipFET™ Power MOSFET and Schottky Diode -20V -4.4A 80mΩ
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제조업체부품 #: NTHD3101FT1G
데이터 시트: NTHD3101FT1G Datasheet (PDF)
패키지/케이스: ChipFET-8
상품 유형: Single FETs, MOSFETs
NTHD3101FT1G 일반적인 설명
Meet the NTHD3101FT1G, a high-performance P-channel MOSFET designed for precision power management in demanding applications. With a continuous drain current rating of -3.2A and a maximum drain-source voltage of -20V, this MOSFET offers exceptional efficiency and reliability for your circuit designs. Its low on-resistance of 0.064ohm and threshold voltage of -1.5V ensure accurate control of current flow, while the chipFET-8 package style with 8 pins simplifies integration into your PCB layout. Operating at temperatures up to 150°C, the NTHD3101FT1G can withstand harsh environmental conditions with ease. Choose this automotive-qualified MOSFET for dependable performance and long-term durability in your electronic systems
특징
- This device features high speed and low noise.
- It offers fast switching times and high efficiency.
- NTHD3 101FT 1G is suitable for high power applications.
- The MOSFET has a high current rating and low RDS(on).
애플리케이션
- Energy-efficient solutions
- High-speed switching technology
- Integrated circuit design
명세서
매개변수 | 값 | 매개변수 | 값 |
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Status | Last Shipments | CAD Models | |
Compliance | PbAHP | Package Type | ChipFET-8 |
Case Outline | 1206A-03 | MSL Type | 1 |
MSL Temp (°C) | 260 | Container Type | REEL |
Container Qty. | 3000 | ON Target | N |
Channel Polarity | P-Channel | Configuration | with Schottky Diode |
V(BR)DSS Min (V) | -20 | VGS Max (V) | 8 |
VGS(th) Max (V) | 1.5 | ID Max (A) | 3.2 |
PD Max (W) | 1.1 | RDS(on) Max @ VGS = 2.5 V (mΩ) | 85 |
RDS(on) Max @ VGS = 4.5 V (mΩ) | 64 | RDS(on) Max @ VGS = 10 V (mΩ) | - |
Qg Typ @ VGS = 4.5 V (nC) | 8.6 | Qg Typ @ VGS = 10 V (nC) | 7.4 |
Ciss Typ (pF) | 680 | Pricing ($/Unit) | Price N/A |
Case/Package | SMD/SMT | Contact Plating | Tin |
Number of Pins | 8 | Weight | 4.535924 g |
Continuous Drain Current (ID) | 3.2 A | Current Rating | -3.2 A |
Drain to Source Breakdown Voltage | -20 V | Drain to Source Resistance | 64 mΩ |
Drain to Source Voltage (Vdss) | 20 V | Fall Time | 12.4 ns |
Gate to Source Voltage (Vgs) | 8 V | Input Capacitance | 680 pF |
Max Operating Temperature | 150 °C | Max Power Dissipation | 1.1 W |
Min Operating Temperature | -55 °C | Nominal Vgs | -450 mV |
Number of Elements | 1 | Packaging | Tape and Reel |
Power Dissipation | 1.1 W | Rds On Max | 80 mΩ |
Resistance | 64 MΩ | Rise Time | 11.7 ns |
Schedule B | 8541290080 | Threshold Voltage | -1.5 V |
Turn-Off Delay Time | 16 ns | Turn-On Delay Time | 5.8 ns |
Voltage Rating (DC) | -20 V | Height | 1.05 mm |
Length | 3.05 mm |
배송
배송 유형 | 배송비 | 리드타임 | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
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은행 송금 | US$30.00의 은행 수수료를 부과합니다. |
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페이팔 | 4.0%의 서비스 수수료를 부과합니다. |
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신용 카드 | 3.5% 서비스 수수료를 부과합니다. |
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웨스턴 유니언 | charge US.00 banking fee. |
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돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The NTHD3101FT1G is a dual N-channel, high-speed power MOSFET chip designed for high-speed switching applications in power management and control circuits. It features a low gate charge and fast switching speed, making it ideal for use in power supplies, motor controls, and lighting applications.
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Equivalent
Some equivalent products of NTHD3101FT1G chip include AON6504, BUK7Y20-40E, and SUP53P06-20. These chips are also MOSFET transistors with similar specifications including voltage and current ratings. It is recommended to consult the datasheets of these chips for more detailed information and to ensure compatibility with your specific application. -
Features
NTHD3101FT1G is a high-speed, low input current diode with low capacitance and a low forward voltage drop. It is suitable for high-speed switching applications and has a unique, ultra-low profile packaging design for space-constrained applications. -
Pinout
The NTHD3101FT1G is a dual N-channel power MOSFET with a pin count of 6. Pin functions include Gate (1 and 4), Drain (3 and 6), and Source (2 and 5). This device is commonly used in high current switching applications. -
Manufacturer
The NTHD3101FT1G is manufactured by ON Semiconductor, which is a leading supplier of power management and analog semiconductor solutions. ON Semiconductor is a multinational company that provides a wide range of products for automotive, industrial, and consumer applications. They specialize in designing and manufacturing high-performance components for various industries worldwide. -
Application Field
The NTHD3101FT1G is commonly used in applications involving high-speed switching such as data communication, optical networking, and radar systems. Its low on-state resistance, low gate charge, and high breakdown voltage make it ideal for power management and protection circuits in these systems. -
Package
The NTHD3101FT1G chip is housed in a surface-mount DPAK package with a TO-252 form, measuring approximately 6.6mm x 6.2mm.
데이터 시트 PDF
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
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최소 주문 수량은 1개부터입니다.
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최저 국제 배송비는 $0.00부터 시작됩니다
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모든 제품에 대해 365일 품질 보증
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