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주문 금액이
$5000H5TQ2G63BFR-11C
High-quality DDR DRAM module for reliable data storage and processing
H5TQ2G63BFR-11C 일반적인 설명
DescriptionThe H5TQ2G43CFR-xxC, H5TQ2G83CFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.FEATURES• VDD=VDDQ=1.5V +/- 0.075V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CK transition• DM masks write data-in at the both rising and falling edges of the data strobe• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported• Programmable additive latency 0, CL-1, and CL-2 supported• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10• Programmable burst length 4/8 with both nibble sequential and interleave mode• BL switch on the fly• 8banks• Average Refresh Cycle (Tcase of0 oC~ 95oC) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC• JEDEC standard 78ball FBGA(x4/x8)• Driver strength selected by EMRS• Dynamic On Die Termination supported• Asynchronous RESET pin supported• ZQ calibration supported• TDQS (Termination Data Strobe) supported (x8 only)• Write Levelization supported• 8 bit pre-fetch• This product in compliance with the RoHS directive.
특징
- 1. It has a memory capacity of 2 gigabits (Gb).
- 2. It operates at a clock frequency of 800 MHz (DDR3-800).
- 3. The module interface is 96-ball FBGA (Fine-pitch Ball Grid Array).
- 4. It requires a supply voltage of 1.5 volts.
- 5. It supports burst lengths of 4 and 8.
애플리케이션
- DDR3 SDRAM modules like H5TQ2G63BFR-11C are commonly used in computer systems and other electronic devices where high-speed memory access is required. Some typical applications include:
- 1. Personal computers and laptops.
- 2. Servers and workstations.
- 3. Gaming consoles.
- 4. Networking devices.
- 5. Mobile devices like smartphones and tablets.
명세서
| 매개변수 | 값 | 매개변수 | 값 |
|---|---|---|---|
| Manufacturer | HYNIX |
배송
| 배송 유형 | 배송비 | 리드타임 | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
| 지불 조건 | 핸드 수수료 | |
|---|---|---|
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은행 송금 | US$30.00의 은행 수수료를 부과합니다. |
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페이팔 | 4.0%의 서비스 수수료를 부과합니다. |
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신용 카드 | 3.5% 서비스 수수료를 부과합니다. |
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웨스턴 유니언 | charge US.00 banking fee. |
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돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
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포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
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모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The H5TQ2G63BFR-11C is a 2 Gb DDR2 SDRAM chip designed for use in various electronic devices. It offers high-speed data transfer and low power consumption, making it ideal for applications requiring reliable memory performance. This chip is commonly used in mobile devices, consumer electronics, and networking equipment.
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Equivalent
Some equivalent products of the H5TQ2G63BFR-11C chip include the Micron MT29F2G08ABBEAHC-IT:D and the Samsung K4B2G0846B-BCK0 chips. These chips have similar specifications and performance characteristics, making them suitable alternatives for various electronic applications. -
Features
1. 2GB LPDDR2 SDRAM 2. 8-bit prefetch 3. High-speed operation: 333MHz (DDR667) 4. Low-voltage operation: 1.8V/1.8V 5. Fully synchronous; all signals referenced to a positive clock edge 6. Internal banks for concurrent operation 7. Data mask(DQM) 8. Single Data Rate architecture; two data transfers per clock cycle -
Pinout
The H5TQ2G63BFR-11C has a 168-ball FBGA package with a x16 interface. It is a 2Gb LPDDR3 SDRAM with a speed of 1600Mbps. The functions of this memory chip include providing high-speed data storage for mobile devices and low-power consumption during operation. -
Manufacturer
The manufacturer of the H5TQ2G63BFR-11C is SK Hynix. SK Hynix is a South Korean multinational semiconductor company specializing in memory chips. They produce a wide range of memory products including DRAM, NAND flash, and SSDs for various applications such as smartphones, computers, and servers. -
Application Field
The H5TQ2G63BFR-11C is commonly used in applications requiring high-speed random access memory such as smartphones, tablets, digital cameras, and other portable electronic devices. It is designed for high-performance computing tasks and is well-suited for applications that require low power consumption and high memory bandwidth. -
Package
The H5TQ2G63BFR-11C chip is in a BGA package with 169-ball form. It has a size of 14mm by 18mm.
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최소 주문 수량은 1개부터입니다.
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최저 국제 배송비는 $0.00부터 시작됩니다
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모든 제품에 대해 365일 품질 보증
