주문 금액이
$5000
ON FDG6321C
Mosfet Array 25V 500mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
제조업체부품 #: FDG6321C
데이터 시트: FDG6321C Datasheet (PDF)
패키지/케이스: SC-70-6
RoHS 상태:
재고상태: 2,264 PC, 새로운 원본
상품 유형: FET, MOSFET Arrays
Warranty: 1 Year Ovaga Warranty - Find Out More
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*모든 가격은 USD 단위입니다.
수량 | 단가 | 추가 가격 |
---|---|---|
1 | $0.393 | $0.393 |
10 | $0.306 | $3.060 |
30 | $0.267 | $8.010 |
100 | $0.220 | $22.000 |
500 | $0.200 | $100.000 |
1000 | $0.186 | $186.000 |
재고: 2,264 PCS
FDG6321C 일반적인 설명
The FDG6321C is a dual N/P channel Mosfet designed for high performance in small form factor applications. With a drain source voltage of 25V for both N and P channels, this Mosfet is versatile and can be used in a variety of circuit designs. Its complementary N and P channel type allows for efficient use in both high and low side switch applications. With a continuous drain current of 500mA for the N channel, the FDG6321C can handle moderate power loads with ease. This 6-pin Sc-70 package is RoHS compliant, making it suitable for use in applications where environmental standards must be met
특징
- Fault Tolerant Operation
- High Isolation Voltage
- Thermal Overload Protection
- Elastomeric Pin Connection
애플리케이션
- Great for everyday use.
- Works well in various settings.
- Perfect for all kinds of tasks.
명세서
매개변수 | 값 | 매개변수 | 값 |
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Source Content uid | FDG6321C | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | SC-70, 6 PIN | Manufacturer Package Code | 419B-02 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 4 Weeks | Samacsys Manufacturer | onsemi |
Additional Feature | LOGIC LEVEL COMPATIBLE | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 25 V | Drain Current-Max (ID) | 0.5 A |
Drain-source On Resistance-Max | 0.45 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G6 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 2 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (Abs) | 0.3 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | feature-category | Power MOSFET |
feature-material | feature-process-technology | DMOS | |
feature-configuration | Dual | feature-channel-mode | Enhancement |
feature-channel-type | N|P | feature-number-of-elements-per-chip | 2 |
feature-maximum-drain-source-voltage-v | 25 | feature-maximum-gate-source-voltage-v | 8@N Channel|-8@P Channel |
feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 0.5@N Channel|0.41@P Channel | |
feature-maximum-drain-source-resistance-mohm | [email protected]@N Channel|[email protected]@P Channel | feature-typical-gate-charge-vgs-nc | [email protected]@N Channel|[email protected]@P Channel |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 62@10V@P Channel|50@10V@N Channel | |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 300 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 6 | feature-supplier-package | SC-88 |
feature-standard-package-name1 | SOT | feature-cecc-qualified | No |
feature-esd-protection | Yes | feature-military | No |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
배송
배송 유형 | 배송비 | 리드타임 | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
![]() |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
---|---|---|
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은행 송금 | US$30.00의 은행 수수료를 부과합니다. |
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페이팔 | 4.0%의 서비스 수수료를 부과합니다. |
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신용 카드 | 3.5% 서비스 수수료를 부과합니다. |
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웨스턴 유니언 | charge US.00 banking fee. |
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돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The FDG6321C is a high-performance, logic-level, ultra-low RDSon power MOSFET chip designed for use in a variety of applications, including power management and battery protection. It features a compact size, low on-state resistance, and fast switching speeds, making it ideal for applications requiring high efficiency and reliability.
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Equivalent
The equivalent products of FDG6321C chip are FDG6311N, FDG6311P, FDG6312N, and FDG6312P. These are N-channel and P-channel MOSFETs specifically designed for switching applications in portable devices and power management circuits. -
Features
FDG6321C is a 77 GHz Automotive Radar Transceiver with integrated FMCW chirp generator. It features high-resolution radar sensor technology with four receive channels and one transmit channel, enabling range, speed, and angle measurements for various automotive applications like adaptive cruise control, blind spot detection, and lane change assist. -
Pinout
The FDG6321C is a dual N-channel digital transistor with a pin count of 6. Pin 1 is the emitter of transistor 1, Pin 2 is the base of transistor 1, Pin 3 is the collector of transistor 1, Pin 4 is the emitter of transistor 2, Pin 5 is the base of transistor 2, and Pin 6 is the collector of transistor 2. -
Manufacturer
FDG6321C is manufactured by Delta Electronics, Inc. It is a multinational company that specializes in power and thermal management solutions, including power supplies, industrial automation, and electronic components. Delta Electronics has a wide range of products and services catering to various industries such as renewable energy, telecommunications, and healthcare. -
Application Field
FDG6321C is typically used in high performance liquid chromatography (HPLC) applications as a stationary phase for separation of complex mixtures, such as peptides and proteins. It is commonly used in research, pharmaceutical, and biotechnology industries for analyzing and quantifying biomolecules in samples. -
Package
The FDG6321C chip comes in a surface mount package type called DFN-8 and has a form factor of 2mm x 2mm. It is a dual N-channel 2.5V logic level enhancement mode field-effect transistor with a maximum rating of 115mA continuous drain current.
데이터 시트 PDF
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
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우리는 풍부한 제품을 보유하고 있으며 귀하의 다양한 요구를 충족시킬 수 있습니다.
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최소 주문 수량은 1개부터입니다.
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최저 국제 배송비는 $0.00부터 시작됩니다
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모든 제품에 대해 365일 품질 보증
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