ON FDB3682
N-Channel 100 V 6A (Ta), 32A (Tc) 95W (Tc) Surface Mount TO-263 (D2PAK)
FDB3682 일반적인 설명
N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.
특징
- RDS(ON) = 32mΩ(Typ.), VGS = 10V, ID = 32A
- Qg(tot) = 18.5nC (Typ.), VGS = 10V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
애플리케이션
- This product is general usage and suitable for many different applications.
명세서
매개변수 | 값 | 매개변수 | 값 |
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Source Content uid | FDB3682 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | TO-263AB, 3 PIN | Manufacturer Package Code | 418AJ |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 13 Weeks | Samacsys Manufacturer | onsemi |
Avalanche Energy Rating (Eas) | 55 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 6 A | Drain-source On Resistance-Max | 0.036 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 95 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | feature-category | Power MOSFET |
feature-material | feature-process-technology | TMOS | |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 100 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 6 |
feature-maximum-drain-source-resistance-mohm | 36@10V | feature-typical-gate-charge-vgs-nc | 18.5@10V |
feature-typical-gate-charge-10v-nc | 18.5 | feature-typical-input-capacitance-vds-pf | 1250@25V |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 95000 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | D2PAK |
feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
배송
배송 유형 | 배송비 | 리드타임 | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
---|---|---|
은행 송금 | US$30.00의 은행 수수료를 부과합니다. | |
페이팔 | 4.0%의 서비스 수수료를 부과합니다. | |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. | |
웨스턴 유니언 | charge US.00 banking fee. | |
돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The FDB3682 chip is an integrated circuit used for power management in electronic devices. It provides efficient control over power distribution, voltage regulation, and current flow in order to optimize device performance and reliability. The chip is commonly used in various applications, such as smartphones, tablets, and other portable devices.
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Equivalent
The equivalent products of the FDB3682 chip are FBQû7124B, FSQû710A, FSQû711, FSQû745, and FSQû745R. -
Features
FDB3682 is a power MOSFET with a low on-state resistance and high current handling capability. It is designed for use in high voltage applications and offers reliable switching performance. It features a built-in diode for reverse current protection and has a compact size for space-saving integration. -
Pinout
The FDB3682 is a MOSFET transistor with a pin count of 6. Its function is to amplify and switch electronic signals or power in electronic circuits. -
Manufacturer
FDB3682 is a power MOSFET transistor manufactured by Fairchild Semiconductor, which is a global semiconductor supplier. Fairchild Semiconductor is a company that designs, produces, and sells a wide range of electronic components, including power management devices, discrete semiconductors, and integrated circuits. -
Application Field
The FDB3682 is a high-voltage power-switching transistor designed for a variety of applications. Its use is commonly found in switch mode power supplies, lighting applications, motor control circuits, and other high-power applications where efficient power switching is required. -
Package
The FDB3682 chip comes in a DFN-8 package type, in the form of a square-shaped chip with a size of approximately 3mm x 3mm.
데이터 시트 PDF
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
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우리는 풍부한 제품을 보유하고 있으며 귀하의 다양한 요구를 충족시킬 수 있습니다.
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최소 주문 수량은 1개부터입니다.
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최저 국제 배송비는 $0.00부터 시작됩니다
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모든 제품에 대해 365일 품질 보증
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