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주문 금액이
$5000
ON FDB33N25TM
D2PAK-packaged Power MOSFET with N-Channel configuration and UniFETTM technology
브랜드: Onsemi
제조업체부품 #: FDB33N25TM
데이터 시트: FDB33N25TM Datasheet (PDF)
패키지/케이스: D2PAK-3
RoHS 상태:
재고상태: 2,161 PC, 새로운 원본
상품 유형: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*모든 가격은 USD 단위입니다.
| 수량 | 단가 | 추가 가격 |
|---|---|---|
| 1 | $1.804 | $1.804 |
| 10 | $1.552 | $15.520 |
| 30 | $1.396 | $41.880 |
| 100 | $1.236 | $123.600 |
| 500 | $1.099 | $549.500 |
| 800 | $1.068 | $854.400 |
재고: 2,161 PCS
FDB33N25TM 일반적인 설명
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
특징
Type: N-Channel MOSFET
Voltage Rating (VDS): 250 volts
Current Rating (ID): 33 amperes
RDS(on) (On-State Resistance): This value indicates the resistance between the drain and source when the MOSFET is in the "on" state.
Package: TO-263 (also known as D²PAK or DDPAK) which is a surface-mount package.
Gate Threshold Voltage (VGS(th)): The voltage at which the MOSFET begins to turn on.
애플리케이션
- This product is general usage and suitable for many different applications.
명세서
| 매개변수 | 값 | 매개변수 | 값 |
|---|---|---|---|
| Product Name | FDB33N25TM | Product Type | Power MOSFET |
| Manufacturer | ON Semiconductor | Transistor Type | N-Channel |
| Drain-Source Voltage (Vdss) | 250V | Continuous Drain Current (Id) | 33A |
| Rds(on) (On-Resistance) | 0.095 ohms (max) | Gate-Source Threshold Voltage (Vgs(th)) | 2V (max) |
| Operating Temperature Range | -55°C to +175°C | Package / Case | TO-263 (D2PAK) |
| Packaging | Tape & Reel, Tube, and other options | feature-category | Power MOSFET |
| feature-material | feature-process-technology | UniFET | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 250 | feature-maximum-gate-source-voltage-v | ±30 |
| feature-maximum-gate-threshold-voltage-v | 5 | feature-maximum-continuous-drain-current-a | 33 |
| feature-maximum-drain-source-resistance-mohm | 94@10V | feature-typical-gate-charge-vgs-nc | 36.8@10V |
| feature-typical-gate-charge-10v-nc | 36.8 | feature-typical-input-capacitance-vds-pf | 1640@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 235000 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | D2PAK |
| feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes | Series | UniFET™ |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 16.5A, 10V | Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2135 pF @ 25 V | Power Dissipation (Max) | 235W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
배송
| 배송 유형 | 배송비 | 리드타임 | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
| 지불 조건 | 핸드 수수료 | |
|---|---|---|
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은행 송금 | US$30.00의 은행 수수료를 부과합니다. |
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페이팔 | 4.0%의 서비스 수수료를 부과합니다. |
 |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. |
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웨스턴 유니언 | charge US.00 banking fee. |
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돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
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포장
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단계1 :제품
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단계2 :진공 포장
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![정전기 방지 가방]( "정전기 방지 가방")
단계3 :정전기 방지 가방
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![개별 포장]( "개별 포장")
단계4 :개별 포장
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단계5 :포장 상자
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![바코드 배송 태그]( "바코드 배송 태그")
단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
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모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The FDB33N25TM is a power MOSFET chip used in various electronic applications. It is designed to handle high currents and voltage levels, making it suitable for power management, motor control, and switching applications. The chip features low on-resistance, fast switching characteristics, and high reliability. It is commonly used in industrial and automotive systems where efficient power handling is critical.
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Equivalent
There are no direct equivalent products for the FDB33N25TM chip as it is a unique component. However, you may consider looking at other N-channel MOSFET chips with similar voltage and current ratings from manufacturers such as Infineon, Texas Instruments, Vishay, or ON Semiconductor. -
Features
The FDB33N25TM is a power MOSFET transistor with a VDS rating of 250V, a continuous drain current of 33A, and a low on-resistance of 0.041Ω. It is designed for high power applications with high efficiency and can handle large current flows. -
Pinout
The FDB33N25TM is a MOSFET transistor with a TO-263 package. It has three pins: gate, drain, and source. The gate pin controls the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the FDB33N25TM is Fairchild Semiconductor. It is a global company that specializes in the design, development, and production of power semiconductor devices and integrated circuits in various industries such as automotive, consumer electronics, industrial, and more. -
Application Field
The FDB33N25TM is a power MOSFET transistor commonly used in various applications such as switching power supplies, motor control, and power management in electronics. It is particularly well-suited for high-voltage and high-power applications where efficiency and reliability are important factors. -
Package
The FDB33N25TM chip has the TO-263 package type, a VDSS form, and a size of 10.16mm x 7.49mm.
데이터 시트 PDF
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최소 주문 수량은 1개부터입니다.
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모든 제품에 대해 365일 품질 보증
Exceptional customer service and high-quality components. Very satisfied.