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TO-247
(총 372개 부품)제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
---|---|---|---|---|
DSEI120-06A | Made of Silicon, TO-247AD Package | Littelfuse | 9,458 | BOM에 추가 |
DSEI30-10A | Product DSEI30-10A: Diode Switch for High Voltage Applications, 1KV, TO-247AD Package | Littelfuse | 8,557 | BOM에 추가 |
SPW24N60C3 | Infineon SPW24N60C3 is a N-channel MOSFET transistor with a current rating of 24.3 A and a voltage capability of 650 V, in a 3-pin TO-247 package | Infineon | 5,711 | BOM에 추가 |
BU941ZP | NPN Power Darlington Transistors Darlington | Stmicroelectronics | 9,944 | BOM에 추가 |
FGH60N60UFD | Premium IGBT transistor for high-frequency switching operation | Onsemi | 3,129 | BOM에 추가 |
FDH45N50F | Amplifier-grade N-channel transistor | NXP Semiconductor | 2,095 | BOM에 추가 |
SPW47N65C3 | Discover unparalleled quality and innovation in the SPW47N65C3, an N-Channel MOSFET Transistor | Infineon | 3,102 | BOM에 추가 |
SPW47N60CFD | TO-247 MOSFET, 600V N-channel, 46A Continuous Drain Current | Infineon | 3,086 | BOM에 추가 |
SPW47N60C3 | SPW47N60C3: Transistor, unipolar N-MOSFET, 650V, 47A, 415W, PG-TO247-3 | Infineon | 2,832 | BOM에 추가 |
SPW35N60CFD | Robust and compact TO247-3 package for easy integration and space-saving | Infineon | 2,173 | BOM에 추가 |
SPW32N50C3 | SPW32N50C3 MOSFET: N-Channel Transistor | Infineon | 3,187 | BOM에 추가 |
SPW20N60S5 | N-channel MOSFET SPW20N60S5, capable of handling currents up to 20A and voltages of 600V | Infineon | 2,732 | BOM에 추가 |
SPW17N80C3 | Gate-source threshold voltage of 3.9V at a drain current of 11A | Infineon | 3,461 | BOM에 추가 |
SPW15N60C3 | TO-247 package MOSFET with 600V N-channel and 15A rating | Infineon | 3,044 | BOM에 추가 |
NGTB50N60FLWG | NGTB50N60FLWG product description: N-channel IGBT chip capable of handling up to 600V and 100A | Onsemi | 9,458 | BOM에 추가 |
IPW60R099CP | 600V 31A TO-247-3 CoolMOS CP N-Channel MOSFET | Infineon | 3,434 | BOM에 추가 |
IPW60R099C6 | High-performance N-channel TO-247AC-3 MOSFET featuring a threshold voltage of 3 | Infineon | 3,452 | BOM에 추가 |
IPW60R075CP | 600V, 39A rated N-channel MOSFET in TO-247 package for various applications | Infineon | 2,637 | BOM에 추가 |
IPW60R070C6 | N-channel 600V 53A Automotive Power MOSFET in TO-247 package | Infineon | 3,783 | BOM에 추가 |
IPW60R045CP | CoolMOS CP MOSFET N-Ch 650V 60A TO247-3 | Infineon | 3,674 | BOM에 추가 |
IPW60R041C6 | Power Field-Effect Transistor IPW60R041C6 | Infineon | 3,503 | BOM에 추가 |
FGH40T65UPD | N-Channel Trans IGBT Chip Encased in TO-247 Tube | Onsemi | 9,458 | BOM에 추가 |
STW14NC50 | Ideal for power management and switching applications, offering exceptional performanc | Stmicroelectronics | 2,314 | BOM에 추가 |
IPW65R080CFD | IPW65R080CFD: A cutting-edge N-Channel MOSFET Transistor | Infineon | 3,028 | BOM에 추가 |
DSEI60-06A | With improved forward voltage characteristics and impressive breakdown voltages of up to 1200V, the FRED Low Vf series stands out | Littelfuse | 9,458 | BOM에 추가 |
STW9N150 | Reliable and efficient power switching with TO247 package, ideal for industrial control systems | Stmicroelectronics Nv | 9,458 | BOM에 추가 |
STW12NK90Z | High-power N-channel MOSFET for demanding application | Stmicroelectronics Nv | 9,458 | BOM에 추가 |
STW20NM60 | Low resistance and fast switching make it ideal for DC-DC converters | Stmicroelectronics | 6,302 | BOM에 추가 |
STW26NM50 | N-channel 500V MOSFET with a typical on-resistance of 100 milliohms and a maximum drain current of 26A, packaged in TO-247 | Stmicroelectronics | 2,285 | BOM에 추가 |
STW9NK90Z | 900 V N-channel MOSFET featuring 1.1 Ohm typ. resistance and 8 A current capacity in TO-247 package | Stmicroelectronics | 8,580 | BOM에 추가 |
STW8NK80Z | High current rating of 6.2 A | Stmicroelectronics | 3,398 | BOM에 추가 |
STPS40L15CW | Schottky diode with 15V voltage and 40A current in TO-247 package | Stmicroelectronics | 3,584 | BOM에 추가 |
BUF420AW | The BUF420AW serves as a Bipolar Transistor (BJT), catering to diverse circuitry needs | Stmicroelectronics | 2,358 | BOM에 추가 |
STW14NK50Z | TO-247AC-packaged Power Field-Effect Transistor, N-Channel with 14A Drain Current and 500V Voltage, featuring 0 | Stmicroelectronics | 2,907 | BOM에 추가 |
STPS61150CW | STPS61150CW offers low forward voltage drop and fast switching speed for improved circuit performance | Stmicroelectronics | 3,083 | BOM에 추가 |
STPS40H100CW | A 3-pin (3+Tab) configuration for easy installation and connection | Stmicroelectronics | 5,606 | BOM에 추가 |
STW12N150K5 | STW12N150K5 is a Single N-Channel Power MOSFET with a high voltage rating of 1500 V | Stmicroelectronics | 2,466 | BOM에 추가 |
STW70N60DM2 | N-channel power MOSFET with a maximum voltage of 600V and current of 66A, enclosed in a TO-247 casing | Stmicroelectronics | 3,663 | BOM에 추가 |
FCH104N60F | N-Channel 600 V 37A (Tc) 357W (Tc) Through Hole TO-247-3 | ON | 126 | BOM에 추가 |
FGH60N60SMD | IGBT, 600V, 60A, Field Stop | Onsemi | 5,602 | BOM에 추가 |
FGH40T100SMD | Advanced Trench-Gate IGBT for Motor Control and Power Electronics | Onsemi | 9,458 | BOM에 추가 |
HUF75344G3 | N-Channel 55 V 75A (Tc) 285W (Tc) Through Hole TO-247-3 | ON Semiconductor, LLC | 2,893 | BOM에 추가 |
FGH40N60SMDF | IGBT Field Stop 600 V 80 A 349 W Through Hole TO-247-3 | onsemi | 9,458 | BOM에 추가 |
TIP142G | Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A 125 W Through Hole TO-247-3 | onsemi | 9,458 | BOM에 추가 |
NGTB50N120FL2WG | IGBT Trench Field Stop 1200 V 100 A 535 W Through Hole TO-247 | onsemi | 9,458 | BOM에 추가 |
NGTB40N120FL2WG | IGBT Trench Field Stop 1200 V 80 A 535 W Through Hole TO-247 | onsemi | 9,458 | BOM에 추가 |
IRFP260N | Robust power management solution for demanding systems requiring high current and voltage handlin | Infineon | 8,015 | BOM에 추가 |
IXGH10N60AU1 | TO-247AD Insulated Gate Bipolar Transistor with 20A I(C) and 600V V(BR)CES, N-Channel | IXYS CORP | 8,726 | BOM에 추가 |
DSEI120-12A | Advanced design for enhanced power handling and longevit | IXYS | 9,458 | BOM에 추가 |
H20R1202 | Restricted Distribution for Authorized Partners Only | Infineon | 3,169 | BOM에 추가 |
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