이 웹사이트는 쿠키를 사용합니다. 이 사이트를 이용함으로써 귀하는 쿠키 사용에 동의하게 됩니다. 자세한 내용은 다음을 참조하세요. 개인 정보 정책.
SuperSO8
(총 102개 부품)제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
---|---|---|---|---|
BSC057N08NS3G | N-Channel Silicon Metal-oxide Semiconductor FET | Infineon | 3,109 | BOM에 추가 |
BSC047N08NS3G | 8A current capacity | Infineon | 3,195 | BOM에 추가 |
BSC600N25NS3 G | 250V 25A TDSON-8 Package | Infineon | 6,465 | BOM에 추가 |
BSC0909NS | 8-pin TDSON EP-packaged N-channel MOSFET capable of handling 34V and 12A | Infineon | 2,481 | BOM에 추가 |
BSC0902NS | 8-pin TDSON EP packaged N-channel MOSFET | Infineon | 3,467 | BOM에 추가 |
BSC052N03LS | OptiMOS MOSFET, 30V, 57A, N-channel, TDSON-8 package | Infineon | 2,746 | BOM에 추가 |
BSC600N25NS3G | 250V 25A TDSON-8 Package | Infineon Technologies Corporation | 2,525 | BOM에 추가 |
BSC320N20NS3G | The BSCNSG is designed for demanding power management task | Infineon Technologies Corporation | 3,837 | BOM에 추가 |
BSC123N08NS3G | Low on-resistance of 0.0123 ohms | Infineon Technologies Corporation | 3,313 | BOM에 추가 |
BSC110N15NS5 | High-voltage N-channel transistor for efficient power control | Infineon | 2,810 | BOM에 추가 |
BSC110N06NS3G | TDSON-8 package provides excellent thermal dissipation and reliability | Infineon Technologies Corporation | 2,933 | BOM에 추가 |
BSC093N15NS5 | Super compact SOpackage for space-saving desi | Infineon | 5,510 | BOM에 추가 |
BSC060N10NS3G | Power transistor with N-channel MOSFET, capable of handling 100V voltage and 14.9A current in 8-pin TDSON EP package for automated assembly | Infineon Technologies Corporation | 3,686 | BOM에 추가 |
BSC059N04LSG | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 | Infineon Technologies Corporation | 2,943 | BOM에 추가 |
BSC059N04LS6 | Compact Pin TDSON Package for space-constrained desig | Infineon Technologies Corporation | 3,789 | BOM에 추가 |
BSC030N08NS5 | Advanced MOSFET Technology for Reliable Performan | Infineon | 2,284 | BOM에 추가 |
BSC028N06NS | High-power N-channel MOSFET for efficient motor control and power conversion application | Infineon | 2,122 | BOM에 추가 |
BSC016N06NS | This 8-pin TDSON package provides high current handling | Infineon | 3,836 | BOM에 추가 |
BSC160N15NS5 | High-speed switching N-channel power transisto | Infineon | 9,908 | BOM에 추가 |
BSC190N15NS3G | BSC190N15NS3 G Power Switching Device | Infineon | 3,422 | BOM에 추가 |
BSC030P03NS3G | Transistor MOSFET P-channel 30V with 25.4A in a 8-pin TDSON EP package on tape and reel | Infineon | 3,862 | BOM에 추가 |
BSC014N06NS | N-Channel 60 V 30A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-17 | Infineon | 3,958 | BOM에 추가 |
BSC021N08NS5 | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3,789 | BOM에 추가 |
BSC027N04LSG | N-Channel 40 V 24A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1 | Infineon Technologies Corporation | 2,603 | BOM에 추가 |
BSC220N20NSFD | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 3,712 | BOM에 추가 |
BSC034N03LSG | High-power N-channel MOSFET for demanding application | Infineon | 3,743 | BOM에 추가 |
BSC0901NS | BSC0901NS Power FET: Operating as an N-channel Metal-oxide Semiconductor Field-Effect Transistor | Infineon | 2,000 | BOM에 추가 |
BSC082N10LS G | Technical Information: BSC082N10LS G MOSFETs with TDSON-8-EP(5x6) packaging, meeting ROHS standards | Infineon Technologies | 5,116 | BOM에 추가 |
BSC017N04NS G | With a 40V voltage tolerance and a 30A current handling capability | Infineon Technologies | 9,261 | BOM에 추가 |
BSC340N08NS3G | With a voltage tolerance of up to 80V and a current capacity of 7A | Infineon Technologies Corporation | 2,482 | BOM에 추가 |
BSC190N12NS3G | The BSC190N12NS3 G MOSFET features a drain-source resistance of 19 milliohms at a gate-source voltage of 10 volts | Infineon Technologies Corporation | 3,536 | BOM에 추가 |
BSC100N06LS3G | N-channel 60V 12A Transistor with TDSON EP 8-Pin Packaging | Infineon Technologies Corporation | 2,341 | BOM에 추가 |
BSC096N10LS5 | Low-voltage MOSFETs designed for high-reliability applications" | Infineon Technologies Corporation | 3,533 | BOM에 추가 |
BSC093N04LSG | Small signal transistor ideal for amplifying signals | Infineon Technologies Corporation | 2,647 | BOM에 추가 |
BSC0805LS | Field-effect transistor with TRENCH technology for high voltage applications | Infineon Technologies Corporation | 3,231 | BOM에 추가 |
BSC072N03LDG | Product BSC072N03LD G is a Dual N-Channel Power Mosfet with a low on-state resistance of 7.2 mOhm | Infineon Technologies Corporation | 3,792 | BOM에 추가 |
BSC032N04LS | High current, low ohmic resistance N-channel FET | Infineon | 2,977 | BOM에 추가 |
BSC025N03MSG | Advanced power management solutions available | Infineon Technologies Corporation | 3,359 | BOM에 추가 |
BSC022N04LS6 | Low-loss, high-current MOSFET suitable for automotive and industrial application | Infineon Technologies Corporation | 2,668 | BOM에 추가 |
BSC022N03SG | Robust (Ta) and (Tc) rated for reliable operation in extreme temperature | Infineon Technologies Corporation | 2,240 | BOM에 추가 |
BSC22DN20NS3 G | OptiMOS 3 MOSFET featuring N-channel architecture, designed to support up to 200 volts and 7 amps, enclosed in a TDSON-8 package | Infineon | 5,328 | BOM에 추가 |
ISC0703NLS | Power Field-Effect Transistor, | Infineon Technologies Corporation | 2,141 | BOM에 추가 |
ISC060N10NM6 | ISC060N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.In SuperSO8 package it achieves ~20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction. | Infineon Technologies Corporation | 3,419 | BOM에 추가 |
BSC010N04LS6 | MOSFET TRENCH <= 40V | Infineon Technologies Corporation | 2,706 | BOM에 추가 |
BSC014N06NST | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3,725 | BOM에 추가 |
BSC019N06NS | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 2,193 | BOM에 추가 |
BSC026N04LS | MOSFET TRENCH <= 40V | Infineon Technologies Corporation | 2,282 | BOM에 추가 |
BSC027N10NS5 | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 2,802 | BOM에 추가 |
BSC027N06LS5 | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3,005 | BOM에 추가 |
BSC050N10NS5 | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 2,947 | BOM에 추가 |
기타 패키지