이 웹사이트는 쿠키를 사용합니다. 이 사이트를 이용함으로써 귀하는 쿠키 사용에 동의하게 됩니다. 자세한 내용은 다음을 참조하세요. 개인 정보 정책.

이미지는 참고용입니다. 제품 사양 보기

주문 금액이

$5000

받으세요 $50 할인을 !

vishay SIA447DJ-T1-GE3

Name: SIA447DJ-T1-GE3
Rating: 4.5 (10 reviews)

P-Channel 12 V 12 A 13.5 mOhm 19W Surface Mount Power MOSFET - PowerPAK-SC-70-6L

브랜드: Vishay

제조업체부품 #: SIA447DJ-T1-GE3

데이터 시트: SIA447DJ-T1-GE3 데이터 시트 (PDF)

패키지/케이스: SC-70-6

상품 유형: Single FETs, MOSFETs

RoHS 상태:

재고상태: 9,458 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. SIA447DJ-T1-GE3 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

수량^*

이메일^*

담당자 이름^*

회사

주목

SIA447DJ-T1-GE3 일반적인 설명

Designed for durability and performance, the SIA447DJ-T1-GE3 MOSFET is a versatile component that offers high power handling capability in a compact package. With a maximum drain-source voltage of -12V and a continuous drain current rating of 12A, this MOSFET is suitable for a wide range of power circuit applications. The low on-resistance and high power dissipation rating ensure efficient operation even under heavy loads, while the wide operating temperature range and MSL 1 - Unlimited rating make it suitable for use in harsh environments. The PowerPAK SC70 package with 6 pins allows for easy integration into circuit designs, making the SIA447DJ-T1-GE3 an ideal choice for designers looking for a reliable power transistor solution

특징

The SIA447DJ-T1-GE3 is a power MOSFET for high-power applications like motor control and electric vehicles
This MOSFET has low on-resistance of 4.5 mΩ and high current rating of 400 A, ideal for space-constrained environments
The SIA447DJ-T1-GE3 power MOSFET is designed for motor control, power supplies, and electric vehicles with compact and efficient design
This product has a low on-resistance of 4.5 mΩ and high current rating of 400 A making it suitable for space-constrained environments
The SIA447DJ-T1-GE3 is a power MOSFET designed for motor control, power supplies, electric vehicles and has compact design
This MOSFET has low on-resistance and high current rating ideal for applications like motor control, power supplies, and electric vehicles

애플리케이션

SWITCHING

명세서

매개변수	값	매개변수	값
Manufacturer:	Vishay	Product Category:	MOSFET
RoHS:	Details	Technology:	Si
Mounting Style:	SMD/SMT	Package / Case:	SC-70-6
Transistor Polarity:	P-Channel	Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V	Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	11 mOhms	Vgs - Gate-Source Voltage:	- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage:	850 mV	Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	19 W	Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK	Series:	SIA
Packaging:	MouseReel	Brand:	Vishay Semiconductors
Configuration:	Single	Fall Time:	25 ns
Forward Transconductance - Min:	35 S	Height:	0.75 mm
Length:	2.05 mm	Product Type:	MOSFET
Rise Time:	30 ns	Factory Pack Quantity:	3000
Subcategory:	MOSFETs	Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	60 ns	Typical Turn-On Delay Time:	30 ns
Width:	2.05 mm	Part # Aliases:	SIA447DJ-GE3
Unit Weight:	0.001446 oz

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The SIA447DJ-T1-GE3 is a high-power, high-frequency SiGe power amplifier chip designed for use in RF applications. It offers superior performance and efficiency, making it ideal for use in power amplifiers for wireless communication systems. With its compact size and low power consumption, the SIA447DJ-T1-GE3 is a versatile and reliable option for a variety of RF applications.
Equivalent

The equivalent products of SIA447DJ-T1-GE3 chip are BM1384 ASIC chip and S9/S9i/S9j/S9 Hydro/S9 VP ASIC miners.
Features

SIA447DJ-T1-GE3 is a power MOSFET with a drain-source voltage of 30 V, continuous drain current of 114 A, and a low on-resistance of 2.2 mΩ. It also features a Fast Body diode for reduced switching losses, suitable for high power applications in automotive, server, and telecom systems.
Pinout

SIA447DJ-T1-GE3 is a 44-pin dual MOSFET array with two N-Channel transistors. It is designed for use in power management applications, providing high efficiency and low RDS(on) performance. This device is commonly used in DC-DC converters, motor control, and other power management circuits.
Manufacturer

The manufacturer of SIA447DJ-T1-GE3 is Vishay Semiconductor. Vishay Semiconductor is a company that specializes in the manufacturing of discrete semiconductors and passive components. They provide a wide range of products for various markets including automotive, industrial, computing, and telecommunications.
Application Field

SIA447DJ-T1-GE3 is commonly used in automotive applications for LED lighting and in industrial applications for power management and lighting control. It is also used in consumer electronics for power management and lighting control in devices such as smartphones, tablets, and laptops.
Package

The SIA447DJ-T1-GE3 chip is a dual N-channel MOSFET in a DFN (Dual Flat No-Lead) package. It has a form factor of a small square and comes in a size of 3mm x 3mm x 0.85mm.