주문 금액이
$5000IXGX120N60B
600V-rated IGBT Transistors with a current capacity of 76 Amps and a low on-state resistance of 2.1
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
브랜드: Littelfuse
제조업체부품 #: IXGX120N60B
데이터 시트: IXGX120N60B 데이터 시트 (PDF)
패키지/케이스: PLUS 247-3
상품 유형: Single IGBTs
IXGX120N60B 일반적인 설명
The IXGX120N60B GenX3™ IGBT is a breakthrough product designed to meet the demands of high voltage power conversion applications with unparalleled performance. With switching capabilities reaching up to 150 kHz and a current range of 42A to 120A, this IGBT offers power designers an exceptional solution for their switching needs. The 600V GenX3™ IGBTs are optimized for high current applications requiring soft-switching frequencies over 200 kHz and hard-switching frequencies of 40 kHz. Utilizing Punch-Through technology, these devices offer superior surge current capabilities, lower saturation voltage, and reduced energy losses, making them a top choice for high voltage switching applications. The 1200V GenX3™ IGBTs leverage advanced Punch-Through technology to provide lower saturation voltages, decreased switching losses, and increased surge current capabilities, further enhancing their appeal for high voltage power conversion applications. With three sub-classes available, designers have the flexibility to select the most suitable option for their specific system requirements, achieving the perfect balance between switching frequency, efficiency, and cost optimization
특징
- High speed switching capability
- Optimized for efficient energy transfer
- Achieves high reliability with minimal maintenance
애플리케이션
- Generator controls
- Grid tie inverters
- Automotive inverters
명세서
매개변수 | 값 | 매개변수 | 값 |
---|---|---|---|
Status | Phase Out/Obsolete | VCES - Collector-Emitter Voltage (V) | 600 |
Collector Current @ 25 ℃ (A) | 200 | VCE(sat) - Collector-Emitter Saturation Voltage (V) | 2.1 |
Fall Time [Inductive Load] (ns) | 160 | Configuration | Single |
Package Type | TO-247 PLUS | Thermal resistance [junction-case] [IGBT] (K/W) | 0.19 |
Collector Current @ 90 ℃ (A) | 120 | Turn-off Energy @ 125 ℃ (mJ) | 5.5 |
Replaced By Part Number | IXGX120N60B3 |
배송
배송 유형 | 배송비 | 리드타임 | |
---|---|---|---|
![]() |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 |
![]() |
페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
![]() |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
![]() |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 |
![]() |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
![]() |
등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
---|---|---|
![]() |
은행 송금 | US$30.00의 은행 수수료를 부과합니다. |
![]() |
페이팔 | 4.0%의 서비스 수수료를 부과합니다. |
![]() |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. |
![]() |
웨스턴 유니언 | charge US.00 banking fee. |
![]() |
돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
-
단계1 :제품
-
단계2 :진공 포장
-
단계3 :정전기 방지 가방
-
단계4 :개별 포장
-
단계5 :포장 상자
-
단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
-
The IXGX120N60B is a power module that combines a high voltage IGBT with a diode for use in motor drive and power conversion applications. It offers low switching and conduction losses, high efficiency, and robust performance in demanding environments. It is designed for high power and high-speed switching applications.
-
Equivalent
Equivalent products of IXGX120N60B chip are IXGX120N60C, IXGK120N60TL, and IXGR120N60BD1. These products have similar specifications and characteristics, making them suitable alternatives for the IXGX120N60B chip. -
Features
Some features of IXGX120N60B include: 1. 120A current rating 2. 600V voltage rating 3. Low VCE(sat) 4. High switching frequency capability 5. High ruggedness 6. Positive temperature coefficient 7. Low diode VF (1.9V at 100A) 8. Square RBSOA -
Pinout
The IXGX120N60B is a 3-pin module, with Pin 1 as the gate, Pin 2 as the collector, and Pin 3 as the emitter. It is a high-speed IGBT (Insulated Gate Bipolar Transistor) with a current rating of 120A and a voltage rating of 600V, commonly used in high-power industrial applications. -
Manufacturer
IXYS Corporation is the manufacturer of the IXGX120N60B. IXYS Corporation is a global semiconductor company specializing in the development and production of power semiconductors, integrated circuits, and RF systems. They provide a range of products for industrial, automotive, consumer, medical, and communication sectors. -
Application Field
The IXGX120N60B is used in applications such as induction heating, high-frequency welding, and other high-power switching applications. It is also suitable for use in motor control, power supplies, and inverters due to its high voltage and current handling capabilities, fast switching times, and low on-resistance. -
Package
The IXGX120N60B chip comes in a TO-268 package, which is a type of module package. It has a form factor of a single electronic component and a size of approximately 10mm x 17mm.
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
-
우리는 풍부한 제품을 보유하고 있으며 귀하의 다양한 요구를 충족시킬 수 있습니다.
-
최소 주문 수량은 1개부터입니다.
-
최저 국제 배송비는 $0.00부터 시작됩니다
-
모든 제품에 대해 365일 품질 보증