Infineon IRF2807PBF
The IRF2807PBF is a MOSFET component engineered for robust current handling
브랜드: Infineon
제조업체부품 #: IRF2807PBF
데이터 시트: IRF2807PBF Datasheet (PDF)
패키지/케이스: TO-220-3
RoHS 상태:
재고상태: 2902 PC, 새로운 원본
상품 유형: 트랜지스터
Warranty: 1 Year Ovaga Warranty - Find Out More
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*모든 가격은 USD 단위입니다.
수량 | 단가 | 추가 가격 |
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1 | $0.695 | $0.695 |
10 | $0.583 | $5.830 |
50 | $0.468 | $23.400 |
100 | $0.413 | $41.300 |
500 | $0.379 | $189.500 |
1000 | $0.361 | $361.000 |
In Stock:2902 PCS
IRF2807PBF 일반적인 설명
The IRF2807PBF is a power MOSFET transistor manufactured by Infineon Technologies. It features a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 82A. This MOSFET is designed for high power applications, such as motor controls, power supplies, and inverters.The IRF2807PBF has a low on-resistance, typically 30 mΩ, which helps in reducing power losses and increasing efficiency in high current applications. It also has a fast switching speed, with a typical rise time of 30ns and fall time of 43ns, making it suitable for high frequency switching applications.This MOSFET comes in a TO-220 package, which provides good thermal performance for dissipating heat generated during operation. It has a junction-to-ambient thermal resistance of 62°C/W, ensuring reliable operation even at high power levels.The IRF2807PBF is RoHS compliant, making it environmentally friendly and suitable for use in various electronic products.
특징
- Enhanced power MOSFET
- Voltage rating: 75V
- Continuous drain current: 82A
- Low on-resistance: 8.0mΩ
- Fast switching performance
- Designed for high power applications
- TO-220AB package
- RoHS compliant
애플리케이션
- Switching power supplies
- Motor control
- DC-DC and AC-DC converters
- Lighting applications
- Automotive systems
- Industrial automation
- Robotics
- Renewable energy
- Battery management systems
- Telecommunications
명세서
매개변수 | 값 | 매개변수 | 값 |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 75 V |
Id - Continuous Drain Current | 82 A | Rds On - Drain-Source Resistance | 13 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 106.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 200 W |
Channel Mode | Enhancement | Brand | Infineon Technologies |
Configuration | Single | Height | 15.65 mm |
Length | 10 mm | Product Type | MOSFET |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 4.4 mm |
Unit Weight | 0.068784 oz |
배송
배송 유형 | 배송비 | 리드타임 | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
---|---|---|
은행 송금 | US$30.00의 은행 수수료를 부과합니다. | |
페이팔 | 4.0%의 서비스 수수료를 부과합니다. | |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. | |
웨스턴 유니언 | charge US.00 banking fee. | |
돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
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포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The IRF2807PBF is a high-power MOSFET (metal-oxide-semiconductor field-effect transistor) chip designed for efficient switching applications. It has a maximum drain current rating of 82A and a voltage rating of 75V, making it suitable for use in power supplies, motor control, and other high-current applications. The chip offers low on-resistance and high switching speed, providing improved performance and reduced power losses.
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Equivalent
Some equivalent products to the IRF2807PBF chip include Fairchild Semiconductor's FDPF33N25, STMicroelectronics' STP33N25, and Infineon Technologies' IPP037N10N3 G. These chips have similar power MOSFET specifications and can be used as alternative options in various applications. -
Features
The features of the IRF2807PBF include a high current rating of 82A, low on-resistance of 0.028Ω, fast switching speed, and a voltage rating of 75V. It also has a TO-220 package, making it suitable for various power applications such as motor control, power supplies, and inverters. -
Pinout
The IRF2807PBF is a power MOSFET transistor with a TO-220 package. It has three pins: Gate (G), Drain (D), and Source (S). The Gate pin controls the switching action, while the Drain pin carries the current, and the Source pin is connected to the ground. Its pin count is 3. -
Manufacturer
The manufacturer of the IRF2807PBF is Infineon Technologies. Infineon Technologies is a global semiconductor company that specializes in manufacturing and providing a wide range of products for various industries, including automotive, industrial, power, and consumer electronics. -
Application Field
The IRF2807PBF is a high-power N-channel MOSFET that can be used in various applications such as switch mode power supplies, motor control, solar inverters, and uninterruptible power supplies (UPS). It is suitable for high current and high voltage applications due to its low on-resistance and high power dissipation capabilities. -
Package
The IRF2807PBF chip is available in a TO-220AB package type, which is a standard through-hole package. It has a form of a metal tab on top for heat dissipation and three leads for connectivity. The dimensions of the package are approximately 10.31mm x 9.54mm x 4.57mm.
데이터 시트 PDF
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모든 제품에 대해 365일 품질 보증
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