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Infineon IRFR5410PBF

Name: IRFR5410PBF
Rating: 4.5 (6 reviews)

IRFR5410 - 100V Single P-Channel Power MOSFET in a D-Pak package

브랜드: Infineon

제조업체부품 #: IRFR5410PBF

데이터 시트: IRFR5410PBF Datasheet (PDF)

패키지/케이스: TO-252-3

상품 유형: 트랜지스터

RoHS 상태:

재고상태: 3211 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

BOM에 추가

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. IRFR5410PBF 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

수량^*

이메일^*

담당자 이름^*

회사

주목

IRFR5410PBF 일반적인 설명

The IRFR5410PBF is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high-efficiency applications. It features a low on-resistance of 0.03 ohms, which allows for high current capability and low power dissipation. The device is rated for a voltage of 100V and a continuous drain current of 23A, making it suitable for a wide range of power switching applications.The IRFR5410PBF is housed in a TO-252 package, which offers easy mounting and thermal dissipation. It also features a high-speed switching capability, making it ideal for high-frequency applications. The MOSFET is designed to operate over a wide temperature range, from -55°C to 150°C, ensuring reliability in various operating conditions.Additionally, the IRFR5410PBF has a low gate charge and capacitance, allowing for fast switching speeds and reduced switching losses. It also features a rugged design that can withstand high energy pulses and transients.

특징

Advanced MOSFET technology
Low on-resistance
Fast switching speed
High power dissipation
Improved thermal performance
RoHS compliant
Halogen-free
TO-252 packaging
Suitable for high efficiency power management applications

애플리케이션

Motor control
Power management
Switch mode power supplies
Battery charging circuits
Solar panel inverters
Industrial control systems
Variable frequency drives
Automotive electronics
LED lighting
Electric vehicle power systems

명세서

매개변수	값	매개변수	값
Product Category	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	TO-252-3	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	13 A	Rds On - Drain-Source Resistance	205 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Qg - Gate Charge	38.7 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	66 W	Channel Mode	Enhancement
Brand	Infineon Technologies	Configuration	Single
Fall Time	46 ns	Height	2.3 mm
Length	6.5 mm	Product Type	MOSFET
Rise Time	58 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	HEXFET Power MOSFET	Typical Turn-Off Delay Time	45 ns
Typical Turn-On Delay Time	15 ns	Width	6.22 mm
Part # Aliases	SP001557110

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The IRFR5410PBF is a power MOSFET transistor designed for use in switching applications. It has a low on-resistance and high-speed switching capabilities, making it suitable for power management in various electronic devices. With a compact size and efficient performance, the IRFR5410PBF chip is commonly used in power supplies, motor control, and automotive applications.
Equivalent

The equivalent products of the IRFR5410PBF chip are the IRFR5410, IRFG4BC40UD and IRFZ44N. These are all power MOSFET transistors with similar specifications and characteristics, suitable for a range of applications such as power supply, motor control, and switching circuits.
Features

IRFR5410PBF is a N-channel power MOSFET with a Vds voltage rating of 100V, a continuous drain current of 12A, and a low on-resistance of 0.23 ohms. It has a TO-252 package, making it suitable for a variety of applications including power supplies, motor control, and lighting control.
Pinout

The IRFR5410PBF is a power MOSFET with a TO-252 package. It has 3 pins, including a gate (G), drain (D), and source (S). The gate pin is used to control the flow of current between the drain and source pins, making it suitable for power switching applications.
Manufacturer

The manufacturer of the IRFR5410PBF is Infineon Technologies AG. Infineon Technologies is a German semiconductor manufacturer that produces a wide range of power semiconductors, sensors, and microcontrollers for automotive, industrial, and consumer electronics applications. The company is a leading supplier of power electronics components and solutions worldwide.
Application Field

The IRFR5410PBF is commonly used in applications such as power supplies, motor control, and automotive systems. It is also utilized in battery management systems, LED lighting, and audio amplifiers due to its high current handling capacity and low on-state resistance.
Package

The IRFR5410PBF chip is a power MOSFET packaged in a TO-252 form, also known as DPAK (TO-263) package. Its size is typically around 6.7mm x 7.7mm x 2.2mm.