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SOT-323-3
(총 157개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| DMP2165UW-7 | Trusted Electronics Supplier since 1988 | Diodes Incorporated | 7,031 | BOM에 추가 |
| 1PS302,115 | High-power diode array for surface mount applications | Nexperia | 9,458 | BOM에 추가 |
| BSS84W-7-F | Package type: SOT-323 | Diodes Incorporated | 9,458 | BOM에 추가 |
| MCH3486-TL-W | N-Channel 60 V 2A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3 | onsemi | 9,458 | BOM에 추가 |
| SI1308EDL-T1-GE3 | A 30V N-channel MOSFET capable of handling 1.4A in an SC70 package | Vishay | 9,458 | BOM에 추가 |
| DMN3067LW-7 | MOSFET, N-CH, 30V, 2.6A, SOT323; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Source Voltage Vds:30V; On Resistance | DIODES INC | 8,878 | BOM에 추가 |
| BAS70W-05-7-F | 200mW power Schottky diodes and rectifiers with 70V | Diodes Incorporated | 5,232 | BOM에 추가 |
| BAS21W-7-F | Rectifier Diode Small Signal Switching 250V 0.4A 50ns 3-Pin SOT-323 T/R | DIODES INC | 8,152 | BOM에 추가 |
| NX7002AKW,115 | NX7002AKW/SOT323/SC-70 MOSFET | Nexperia | 8,564 | BOM에 추가 |
| NX3020NAKW,115 | N-Channel 30 V 180mA (Ta) 260mW (Ta), 1.1W (Tc) Surface Mount SOT-323 | Nexperia | 9,458 | BOM에 추가 |
| RU1C001UNTCL | High-performance N-channel FET with a compact design, perfect for integration into compact electronic systems | Rohm Semiconductor | 8,993 | BOM에 추가 |
| RHU002N06T106 | High Efficiency N-Channel MosFet with 60 V Voltage Rating, 200 mW Power Handling, and 2.4 Ohm Resistance in UMT-3 Package | Rohm Semiconductor | 7,427 | BOM에 추가 |
| RAL035P01TCR | RAL035P01TCR is a P-channel MOSFET, with a 3 | Rohm Semiconductor | 8,292 | BOM에 추가 |
| PMF170XP,115 | Efficient and reliable 20 V MOSFET with 1 A current rating | Nexperia | 9,458 | BOM에 추가 |
| BSS123W-7-F | 0805 Surface Mount Multilayer Ceramic Capacitor, 0.22 uF, 50 V, ±10 % Tolerance, X7R | Diodes Incorporated | 8,577 | BOM에 추가 |
| BSS138PW,115 | N-Channel 60 V 320mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323 | Nexperia | 9,458 | BOM에 추가 |
| BAV99W,115 | Dual 1.25V@150mA diode in SOT-323-3 package for high-speed operations | Nexperia | 5,724 | BOM에 추가 |
| BAV70W,115 | Diode Array 1 Pair Common Cathode 100 V 175mA (DC) Surface Mount SC-70, SOT-323 | Nexperia USA Inc. | 6,795 | BOM에 추가 |
| BSS84AKW,115 | P-Channel MOSFET rated for 50V and 150mA | Nexperia | 9,458 | BOM에 추가 |
| BAS70-04W,115 | Diode Array 1 Pair Series Connection 70 V 70mA (DC) Surface Mount SC-70, SOT-323 | Nexperia USA Inc. | 9,525 | BOM에 추가 |
| BAV199W,115 | Diode Array 1 Pair Series Connection 75 V 110mA (DC) Surface Mount SC-70, SOT-323 | Nexperia USA Inc. | 5,257 | BOM에 추가 |
| BAS40-04W,115 | BAS40-04W,115 Schottky Diode with 0.12A current and SC-70 package with 3 pins | Nexperia USA Inc. | 8,339 | BOM에 추가 |
| BCR198W | Pre-Set Bias Bipolar Transistors | Infineon | 5,594 | BOM에 추가 |
| BC847BW,135 | Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 200 mW Surface Mount SOT-323 | NEXPERIA | 5,856 | BOM에 추가 |
| BC847CW,115 | compact npn transistors in a tiny sot323 (sc-70) surface-mount plastic enclosure | Nexperia | 5,842 | BOM에 추가 |
| BC817-40W,115 | Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 200 mW Surface Mount SOT-323 | Nexperia USA Inc. | 7,071 | BOM에 추가 |
| 2N7002W-7-F | mount N-type MOSFET with 3 pins and 0.115A current capability | Diodes Incorporated | 6,384 | BOM에 추가 |
| 2SC4081T106R | Ultra Miniature Transistor in 3-Pin UMT Package for NPN General Purpose Bipolar Junction Transistor, with 50 Volts and 0.15 Amps | Onsemi | 5,146 | BOM에 추가 |
| BSS138W-7-F | SOT323-packaged N-channel MOSFET capable of handling up to 50 volts and 0.2 amps | Diodes Incorporated | 7,112 | BOM에 추가 |
| NVS4409NT1G | The null SOT-323-3 MOSFET model NVS4409NT1G offers reliable performance in a compact and RoHS-compliant package | onsemi | 9,458 | BOM에 추가 |
| NSVBAT54SWT1G | Diode Array 1 Pair Series Connection 30 V 200mA (DC) Surface Mount SC-70, SOT-323 | onsemi | 9,458 | BOM에 추가 |
| SMMBT3906WT1G | MMBT3906W - Bipolar Transistor Suitable for Multiple Applications | onsemi | 9,458 | BOM에 추가 |
| BFU520WX | 1nA 12V 450mW 5mA 95@5mA8V 10GHz NPN -40¡Í~+150¡Í@(Tj) SOT-323-3 Bipolar Transistors - BJT ROHS | NXP | 9,458 | BOM에 추가 |
| SBAV70WT1G | Diode Array 1 Pair Common Cathode 100 V 200mA (DC) Surface Mount SC-70, SOT-323 | onsemi | 9,458 | BOM에 추가 |
| DMN61D9UWQ-13 | DMN61D9UWQ-13: 60V 400mA 440mW 2Ω@50mA, 5V 1V@250uA null SOT-323 MOSFETs ROHS | DIODES INC | 5,797 | BOM에 추가 |
| SSM3J15FU,LF | High-speed switching MOSFET for small signals | Toshiba | 9,458 | BOM에 추가 |
| 2SC4081U3HZGT106R | NPN Bipolar Junction Transistors - 50V 0.15A 0.2W SOT-323 | ROHM Semiconductor | 9,458 | BOM에 추가 |
| 2SA1576U3HZGT106R | General Purpose Bipolar Junction Transistor, PNP, 50V, 150mA, SOT-323 Package, Tape and Reel | ROHM Semiconductor | 9,458 | BOM에 추가 |
| 2SA1576U3T106R | These transistors utilize a PNP setup, rated for -50 volts and -0.15 amps, and come in an SOT-323 package | ROHM Semiconductor | 9,458 | BOM에 추가 |
| DMN62D0UW-7 | 60V Low Voltage Drop Field-Effect Transistor | DIODES INC | 9,611 | BOM에 추가 |
| DMN2058UW-7 | DMN2058UW-7 is a high performance N-Channel MOSFET with a maximum current rating of 4.6A | Diodes Incorporated | 9,458 | BOM에 추가 |
| BSS123WQ-7-F | Field-effect transistor suitable for high-power applications, featuring a maximum gate-source voltage of 20V | Diodes Incorporated | 9,458 | BOM에 추가 |
| SSM3K15AFU,LF | Energy-efficient device for compact electronic product | Toshiba | 9,458 | BOM에 추가 |
| DTC114TUA | Ideal for applications requiring low power consumption and high sensitivity | Yangjie Technology | 6,137 | BOM에 추가 |
| UMZU6.2NT106 | SMD Zener Diode with Dual Common Anode, 6.2V Voltage Rating, 5% Tolerance, 200mW Power Dissipation, Tape and Reel Packaging | ROHM Semiconductor | 5,391 | BOM에 추가 |
| RZF030P01TL | Compact MOSFET design for precise current limiting | ROHM Semiconductor | 8,802 | BOM에 추가 |
| RUF020N02TL | Ideal for applications requiring a 1.5V compatible N-channel MOSFET | ROHM Semiconductor | 6,521 | BOM에 추가 |
| RUF025N02TL | MOSFET Medium Power Switching MOSFET, N-Channel, 20 Volts, 2 Amperes | ROHM Semiconductor | 7,179 | BOM에 추가 |
| RU1C002ZPTCL | High performance 1.2V drive P-channel MOSFET | ROHM Semiconductor | 5,814 | BOM에 추가 |
| RU1L002SNTL | MOSFET for 2.5V operation | ROHM Semiconductor | 6,333 | BOM에 추가 |
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