WINBOND W631GG6KB15K

W631GG6KB15K 일반적인 설명

GENERAL DESCRIPTIONThe W631GG6KB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high speed transfer rates up to 1866 Mb/sec/pin (DDR3-1866) for various applications. W631GG6KB is sorted into the following speed grades: -11, -12, 12I, 12A, 12K -15, 15I, 15A and 15K. The -11 speed grade is compliant to the DDR3-1866 (13-13-13) specification. The -12, 12I, 12A and 12K speed grades are compliant to the DDR3-1600 (11-11-11) specification (the 12I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -15, 15I, 15A and 15K speed grades are compliant to the DDR3-1333 (9-9-9) specification (the 15I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C).FEATURES Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 6, 7, 8, 9, 10, 11 and 13 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On The-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data Edge-aligned with read data and center-aligned with write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CK and CK#) Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate) Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency Read Latency = Additive Latency plus CAS Latency (RL = AL + CL) Auto-precharge operation for read and write bursts Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR) Precharged Power Down and Active Power Down

특징

•  Power Supply: VDD, VDDQ = 1.5V ± 0.075V
•  Double Data Rate architecture: two data transfers per clock cycle
•  Eight internal banks for concurrent operation
•  8 bit prefetch architecture
•  CAS Latency: 6, 7, 8, 9, 10, 11 and 13
•  Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On The-Fly (OTF)
•  Programmable read burst ordering: interleaved or nibble sequential
•  Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
•  Edge-aligned with read data and center-aligned with write data
•  DLL aligns DQ and DQS transitions with clock
•  Differential clock inputs (CK and CK#)
•  Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
•  Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
•  Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
•  Auto-precharge operation for read and write bursts
•  Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
•  Precharged Power Down and Active Power Down

명세서