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NVMFS5C646NLAFT1G

Name: NVMFS5C646NLAFT1G
Brand: onsemi
Rating: 4.8 (10 reviews)

N-Channel 60 V 20A (Ta), 93A (Tc) 3.7W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

브랜드: onsemi

제조업체부품 #: NVMFS5C646NLAFT1G

데이터 시트: NVMFS5C646NLAFT1G 데이터 시트 (PDF)

패키지/케이스: SO-8FL-4

상품 유형: Single FETs, MOSFETs

RoHS 상태:

재고상태: 9,458 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. NVMFS5C646NLAFT1G 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

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담당자 이름^*

회사

주목

NVMFS5C646NLAFT1G 일반적인 설명

The NVMFS5C646NLAFT1G PowerTrench® MOSFET by ON Semiconductor is a high-performance N-channel enhancement mode power FET that caters to the demands of modern power management applications. With a robust drain-source voltage of 30V and a continuous drain current rating of 67A, this MOSFET offers exceptional reliability and efficiency in a compact package. Its low on-resistance of 4.6mΩ at a Vgs of 10V ensures minimal conduction losses, making it an ideal choice for various electronic devices requiring efficient power management

특징

NVMFS5C646NLAFT1G is a high-power N-channel MOSFET for automotive and industrial applications
The device features low on-resistance of 5.6mΩ and fast switching performance for efficient energy transfer
Designed for use in harsh environments, it offers improved reliability and reduced thermal resistance
This MOSFET has a voltage rating of 40V and a continuous drain current rating of 120A for high-power applications
The compact and thermally efficient package design helps to reduce power loss and increase efficiency
This N-channel MOSFET is suitable for use in power electronic circuits, motor control, and energy storage systems

애플리케이션

Automotive power systems
Solenoid driver circuits
Electronic load switches

명세서

매개변수	값	매개변수	값
Manufacturer:	onsemi	Product Category:	MOSFET
RoHS:	Details	Technology:	Si
Mounting Style:	SMD/SMT	Package / Case:	SO-8FL-4
Transistor Polarity:	N-Channel	Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V	Id - Continuous Drain Current:	93 A
Rds On - Drain-Source Resistance:	3.8 mOhms	Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V	Qg - Gate Charge:	33.7 nC
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	79 W	Channel Mode:	Enhancement
Qualification:	AEC-Q101	Packaging:	MouseReel
Brand:	onsemi	Configuration:	Single
Fall Time:	5.1 ns	Forward Transconductance - Min:	105 S
Product Type:	MOSFET	Rise Time:	14.9 ns
Factory Pack Quantity:	1500	Subcategory:	MOSFETs
Transistor Type:	1 N-Channel	Typical Turn-Off Delay Time:	23.6 ns
Typical Turn-On Delay Time:	10.4 ns	Unit Weight:	0.026455 oz
Product Status	Active	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 93A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 50A, 10V	Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33.7 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2164 pF @ 25 V	Power Dissipation (Max)	3.7W (Ta), 79W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Grade	Automotive
Qualification	AEC-Q101	Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)	Package / Case	8-PowerTDFN, 5 Leads
Base Product Number	NVMFS5

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The NVMFS5C646NLAFT1G chip is a dual N-channel MOSFET designed for use in low voltage, high speed switching applications. It features a low on-resistance and a compact footprint, making it ideal for applications where space and efficiency are important. The chip can handle high current loads and has a high power dissipation capability.
Equivalent

The equivalent products of NVMFS5C646NLAFT1G chip are NVMFS5C646NT1G, NVMFS5C646NT2G, NVMFS5C646NTAG, NVMFS5C646NTWG, NVMFS5C646NTWG and NVMFS5C646NZG.
Features

- NVMFS5C646NLAFT1G is a N-channel MOSFET - Features low on-resistance - Can handle high current and voltage levels - Suitable for high power applications - Provides fast switching capabilities - Comes in a compact and surface-mount package
Pinout

The NVMFS5C646NLAFT1G is a Power MOSFET with a pin count of 8. The pins have functions such as gate, drain, and source for controlling the flow of current in a circuit. Additionally, it has an integrated Schottky diode for more efficient performance.
Manufacturer

ON Semiconductor is the manufacturer of the NVMFS5C646NLAFT1G. It is a company that specializes in the development and manufacturing of semiconductor components for a wide range of applications including automotive, industrial, and consumer electronics. ON Semiconductor is a global leader in energy-efficient innovations that enable design engineers to reduce energy consumption and increase performance in their designs.
Application Field

The NVMFS5C646NLAFT1G can be used in various applications such as power management, battery chargers, motor control, lighting, and other high-current switching applications. Its low on-resistance and high current-carrying capability make it suitable for use in high-power circuits where efficiency and reliability are crucial.
Package

The NVMFS5C646NLAFT1G chip comes in a DFN-8 package type. It is a MOSFET form factor with a size of 3.3mm x 3.3mm.