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NVMFD5C650NLWFT1G

Name: NVMFD5C650NLWFT1G
Brand: onsemi
Rating: 4.8 (10 reviews)

Mosfet Array 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

브랜드: onsemi

제조업체부품 #: NVMFD5C650NLWFT1G

데이터 시트: NVMFD5C650NLWFT1G 데이터 시트 (PDF)

패키지/케이스: DFN EP

상품 유형: FET, MOSFET Arrays

RoHS 상태:

재고상태: 9,458 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. NVMFD5C650NLWFT1G 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

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이메일^*

담당자 이름^*

회사

주목

NVMFD5C650NLWFT1G 일반적인 설명

The NVMFD5C650NLWFT1G is a high-performance dual N-channel MOSFET tailored for automotive applications. Capable of supporting a continuous drain current of 111A and a drain source voltage of 60V, this transistor is designed for robust power delivery in automotive electronic systems. Its ultra-low on resistance of 0.0035ohm, tested at a voltage of 10V, ensures minimal power loss and maximum efficiency. With a threshold voltage of 2.2V and a power dissipation of 125W, this MOSFET is well-suited for high-power automotive applications. Housed in a compact DFN-8 case style with 8 pins, the NVMFD5C650NLWFT1G offers a space-efficient solution for PCB designs. It meets AEC-Q101 automotive qualification standards, guaranteeing reliable and durable performance in harsh automotive environments. With a maximum operating temperature of 175°C and compliance with SVHC regulations for lead, the NVMFD5C650NLWFT1G is engineered to excel in the demanding conditions of automotive electronics

특징

Compact Design and Low Power
Fast Response Time and High Current Handling
Low Distortion and Noise Immunity
AEC-Q100 Qualified and PPAP Compliant
High-Speed Data Transfer and Low Latency
Robust ESD Protection and Wide Operating Range

애플리케이션

Customizable options
Superior functionality
Seamless operation

명세서

매개변수	값	매개변수	값
Manufacturer:	onsemi	Product Category:	MOSFET
RoHS:	Details	Technology:	Si
Mounting Style:	SMD/SMT	Package / Case:	SO-8FL-Dual-8
Transistor Polarity:	N-Channel	Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V	Id - Continuous Drain Current:	111 A
Rds On - Drain-Source Resistance:	3.5 mOhms, 3.5 mOhms	Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V	Qg - Gate Charge:	37 nC
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W	Channel Mode:	Enhancement
Qualification:	AEC-Q101	Series:	NVMFD5C650NL
Packaging:	MouseReel	Brand:	onsemi
Configuration:	Dual	Fall Time:	13 ns, 13 ns
Forward Transconductance - Min:	120 S, 120 S	Product Type:	MOSFET
Rise Time:	24 ns, 24 ns	Factory Pack Quantity:	1500
Subcategory:	MOSFETs	Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	37 ns, 37 ns	Typical Turn-On Delay Time:	13 ns, 13 ns
Unit Weight:	0.005686 oz

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The NVMFD5C650NLWFT1G is a power MOSFET chip designed for use in low voltage, high speed switching applications. It features a low on-resistance and high load capacity, making it ideal for power management in various electronic devices. The chip is designed to optimize performance and efficiency in a compact and reliable package.
Equivalent

Some equivalent products of the NVMFD5C650NLWFT1G chip include the IPP60R190C6, IRFR5305TRLPBF, FDP038AN08A0, and NTMFS5C629NL. These chips are all power MOSFETs with similar specifications and performance characteristics.
Features

The NVMFD5C650NLWFT1G is a N-Channel Power MOSFET with a high current rating of 85A, low on-resistance of 6.5mΩ, and a voltage rating of 40V. It is designed for automotive applications and offers excellent switching performance and thermal characteristics. Additionally, it is AEC-Q101 qualified, making it suitable for various automotive powertrain and braking applications.
Pinout

The NVMFD5C650NLWFT1G is a power MOSFET with a pin count of 8. It is designed for use in high-speed switching applications, such as DC-DC converters and synchronous rectification. Its functions include low gate charge, low on-resistance, and fast switching speed, making it suitable for high-efficiency power management systems.
Manufacturer

ON Semiconductor Corporation is the manufacturer of the NVMFD5C650NLWFT1G. It is a multinational semiconductor supplier company that designs and manufactures power management, analog, and discrete components for various industries including automotive, communications, computing, consumer, industrial, and aerospace.
Application Field

The NVMFD5C650NLWFT1G is a N-channel MOSFET transistor with a voltage rating of 650V and a current rating of 5A. It is commonly used in power supply, motor control, and high frequency switching applications. It is suitable for use in electric vehicle systems, solar inverters, and industrial motor control systems.
Package

The NVMFD5C650NLWFT1G is a surface mount package type, in a dual asymmetrical form. Its size is 5mm x 6mm, with a thickness of 0.9mm.