주문 금액이
$5000NVMFD5C650NLT1G
Mosfet Array 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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브랜드: onsemi
제조업체부품 #: NVMFD5C650NLT1G
데이터 시트: NVMFD5C650NLT1G 데이터 시트 (PDF)
패키지/케이스: DFN EP
상품 유형: FET, MOSFET Arrays
NVMFD5C650NLT1G 일반적인 설명
Leveraging dual N-Channel technology, the NVMFD5C650NLT1G Mosfet offers superior performance characteristics suitable for automotive applications. With a continuous drain current capacity of 111A and a drain-source voltage of 60V, this transistor can accommodate high-power demands in automotive systems. The low on-resistance of 0.0035Ohm, tested at 10V, ensures efficient power conversion and minimal energy loss. Featuring a threshold voltage of 2.2V, this Mosfet delivers precise and reliable switching performance. Compliant with Rohs standards, this product from Onsemi guarantees both quality and environmental sustainability in automotive electronics
특징
- High-Speed Analog-to-Digital Conversion
- Low-Jitter Timing for Precise Clock Signals
- Compact Size with Reduced EMI and RFI
- Low Power Consumption for Extended Battery Life
- Sophisticated Error Detection and Correction
- High-Speed Data Transmission up to 100 Mbps
애플리케이션
- LED driver
- Motor controller
- Power supply
명세서
매개변수 | 값 | 매개변수 | 값 |
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Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | SO-8FL-Dual-8 |
Transistor Polarity: | N-Channel | Number of Channels: | 2 Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 111 A |
Rds On - Drain-Source Resistance: | 3.5 mOhms, 3.5 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 37 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 125 W | Channel Mode: | Enhancement |
Qualification: | AEC-Q101 | Series: | NVMFD5C650NL |
Packaging: | MouseReel | Brand: | onsemi |
Configuration: | Dual | Fall Time: | 13 ns, 13 ns |
Forward Transconductance - Min: | 120 S, 120 S | Product Type: | MOSFET |
Rise Time: | 24 ns, 24 ns | Factory Pack Quantity: | 1500 |
Subcategory: | MOSFETs | Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 37 ns, 37 ns | Typical Turn-On Delay Time: | 13 ns, 13 ns |
Unit Weight: | 0.005686 oz |
배송
배송 유형 | 배송비 | 리드타임 | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 |
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등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
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은행 송금 | US$30.00의 은행 수수료를 부과합니다. |
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페이팔 | 4.0%의 서비스 수수료를 부과합니다. |
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신용 카드 | 3.5% 서비스 수수료를 부과합니다. |
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웨스턴 유니언 | charge US.00 banking fee. |
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돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The NVMFD5C650NLT1G chip is a 650V N-channel MOSFET designed for use in power management applications. It is equipped with low on-resistance and a high switching speed, making it suitable for switching power supplies, motor control, and other high-efficiency power conversion systems. The chip is designed to operate under high voltage and high temperature conditions, making it suitable for demanding industrial and automotive applications.
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Equivalent
Some equivalent products of the NVMFD5C650NLT1G chip include the IRFD5C60, IRFD5C65, and IRFD5C70 MOSFETs. These are all N-channel power MOSFETs designed for use in various applications such as switching regulators, power supplies, and motor controls. -
Features
1. NVMFD5C650NLT1G is a 650 V N-channel MOSFET. 2. It has a low on-resistance of 0.37 Ohms. 3. Features high current handling capability of 23 A. 4. This MOSFET is designed for use in automotive applications. 5. It has a compact surface-mount DPAK package for easy installation. -
Pinout
The NVMFD5C650NLT1G has 8 pins and is a N-Channel Power MOSFET. It is designed for use in high-power applications, such as power supplies, motor control, and battery management systems. The device is capable of handling high current and has low on-state resistance for efficient power handling. -
Manufacturer
ON Semiconductor is the manufacturer of the NVMFD5C650NLT1G. It is an American multinational corporation that supplies semiconductor and device solutions for various industries such as automotive, communications, consumer, industrial, and aerospace and defense. -
Application Field
The NVMFD5C650NLT1G is commonly used in applications requiring high-speed data transmission such as networking equipment, servers, and storage systems. It is ideal for use in high-frequency applications due to its low capacitance and low on-resistance characteristics. It is also suitable for use in power management and battery charging systems. -
Package
The NVMFD5C650NLT1G chip is offered in a surface mount package type known as DFN-5 (Dual Flat No Lead). It has a form factor of 3x3 mm and is available in a size of 5 mm².
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
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우리는 풍부한 제품을 보유하고 있으며 귀하의 다양한 요구를 충족시킬 수 있습니다.
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최소 주문 수량은 1개부터입니다.
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최저 국제 배송비는 $0.00부터 시작됩니다
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모든 제품에 대해 365일 품질 보증