ON NJT4030PT1G
Bipolar (BJT) Transistor PNP 40 V 3 A 160MHz 2 W Surface Mount SOT-223 (TO-261)
NJT4030PT1G 일반적인 설명
The combination of low saturation voltage and high gain makes this bipolar power transistor an ideal device for high speed switching applications where power saving is a concern.
특징
- Low Collector-Emitter Saturation Voltage
- High DC Current Gain
- High Current-Gain Bandwidth Product
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
애플리케이션
- Voltage regulation
- Power management for portable devices
- Switching regulator
- Inductive load driver
명세서
매개변수 | 값 | 매개변수 | 값 |
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Source Content uid | NJT4030PT1G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Part Package Code | SOT-223 (TO-261) 4 LEAD | Package Description | TO-261, 4 PIN |
Pin Count | 4 | Manufacturer Package Code | 0.0318 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 54 Weeks | Samacsys Manufacturer | onsemi |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 3 A |
Collector-Emitter Voltage-Max | 40 V | Configuration | SINGLE |
DC Current Gain-Min (hFE) | 100 | JEDEC-95 Code | TO-261AA |
JESD-30 Code | R-PDSO-G4 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 4 | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | PNP | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 160 MHz |
feature-type | PNP | feature-category | Bipolar Power |
feature-material | Si | feature-configuration | Single Dual Collector |
feature-number-of-elements-per-chip | 1 | feature-maximum-collector-base-voltage-v | 40 |
feature-maximum-collector-emitter-voltage-v | 40 | feature-maximum-emitter-base-voltage-v | 6 |
feature-maximum-dc-collector-current-a | 3 | feature-minimum-dc-current-gain | [email protected]@1V|200@1A@1V|100@3A@1V |
feature-maximum-power-dissipation-mw | 2000 | feature-maximum-transition-frequency-mhz | 160(Typ) |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 4 | feature-supplier-package | SOT-223 |
feature-standard-package-name1 | SOT | feature-cecc-qualified | No |
feature-esd-protection | Yes | feature-military | No |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
배송
배송 유형 | 배송비 | 리드타임 | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
---|---|---|
은행 송금 | US$30.00의 은행 수수료를 부과합니다. | |
페이팔 | 4.0%의 서비스 수수료를 부과합니다. | |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. | |
웨스턴 유니언 | charge US.00 banking fee. | |
돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
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단계1 :제품
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단계2 :진공 포장
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단계3 :정전기 방지 가방
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단계4 :개별 포장
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단계5 :포장 상자
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단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
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The NJT4030PT1G chip is a high-speed, low-power diode designed for use in amplifier circuits and other high frequency applications. Its small package size and low forward voltage drop make it suitable for use in portable electronic devices. The chip is manufactured by ON Semiconductor and offers excellent performance and reliability in demanding applications.
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Equivalent
The equivalent products of NJT4030PT1G chip are BCP56-16T1G, BSS138LT1G, BSS84LT1G, BSS84P, BSS84PT1, NDT3055L, NDT3055L-1, NDT3055L-1G, PDTA123TT, PDTA123TK, and PDTA124TK. -
Features
The features of NJT4030PT1G include high-speed switching, low on-resistance, and low gate charge. It is an N-channel MOSFET transistor with a drain voltage rating of 30 volts and a continuous drain current rating of 11 amps. It is designed for use in power management applications. -
Pinout
The NJT4030PT1G is a dual N-channel logic level enhancement mode Field-Effect Transistor (FET) with a pin count of 3. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. -
Manufacturer
The manufacturer of the NJT4030PT1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductors and other electronic components. -
Application Field
The NJT4030PT1G is a small signal NPN transistor commonly used in low-power applications such as amplifiers, switching circuits, and voltage regulators. It is suitable for general-purpose amplification tasks and low-frequency switching applications. -
Package
The NJT4030PT1G chip is packaged in a SOT-23 form factor. Its size measures approximately 2.9mm x 1.3mm.
데이터 시트 PDF
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
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우리는 풍부한 제품을 보유하고 있으며 귀하의 다양한 요구를 충족시킬 수 있습니다.
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최소 주문 수량은 1개부터입니다.
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최저 국제 배송비는 $0.00부터 시작됩니다
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모든 제품에 대해 365일 품질 보증
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