이 웹사이트는 쿠키를 사용합니다. 이 사이트를 이용함으로써 귀하는 쿠키 사용에 동의하게 됩니다. 자세한 내용은 다음을 참조하세요. 개인 정보 정책.

이미지는 참고용입니다. 제품 사양 보기

K4H561638H-UCB3

Name: K4H561638H-UCB3
Rating: 4.5 (10 reviews)

PDSO66 DDR DRAM 16MX16 0.7ns CMOS

브랜드: Samsung

제조업체부품 #: K4H561638H-UCB3

데이터 시트: K4H561638H-UCB3 데이터 시트 (PDF)

패키지/케이스: TSSOP66

상품 유형: MCU

RoHS 상태:

재고상태: 4350 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

BOM에 추가

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. K4H561638H-UCB3 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

수량^*

이메일^*

담당자 이름^*

회사

주목

K4H561638H-UCB3 일반적인 설명

The K4H561638H-UCB3 is a synchronous dynamic random-access memory (SDRAM) module manufactured by Samsung. It features a capacity of 512 megabytes (MB) organized as 4 banks of 4 megabit (Mbit) x 16 bits. Operating at a voltage of 2.5 volts (V), it supports high-speed data transfer rates up to 166 megatransfers per second (MT/s). This memory module utilizes a double data rate (DDR) interface, enabling it to transfer data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to traditional SDRAM.With a CAS latency of 3 clock cycles, this module offers fast access times, enhancing overall system performance. It conforms to the JEDEC standard and is designed for use in computing systems such as desktop PCs, laptops, and servers. The K4H561638H-UCB3 incorporates advanced features like auto precharge and auto refresh to optimize memory management and reliability. Its compact form factor and low power consumption make it suitable for various computing applications where high-speed and efficient memory access are essential

특징

16M x 16 DDR2 SDRAM
High-speed data transfer rates up to 400Mbps
Double data rate architecture
Operates at a power supply voltage of 1.8V
Programmable CAS latency
JEDEC standard 60-ball FBGA package

애플리케이션

Mobile phones
Tablets
Internet of Things (IoT) devices
Wearable technology
Smart home devices
Automotive electronics
Digital cameras
Industrial applications
Medical devices
Military and aerospace systems

명세서

매개변수	값	매개변수	값
Pbfree Code	Yes	Rohs Code	Yes
Part Life Cycle Code	Obsolete	Ihs Manufacturer	SAMSUNG SEMICONDUCTOR INC
ECCN Code	EAR99	HTS Code	8542.32.00.24
Samacsys Manufacturer	SAMSUNG	Access Time-Max	0.7 ns
Clock Frequency-Max (fCLK)	166 MHz	I/O Type	COMMON
Interleaved Burst Length	2,4,8	JESD-30 Code	R-PDSO-G66
JESD-609 Code	e6	Memory Density	268435456 bit
Memory IC Type	DDR1 DRAM	Memory Width	16
Moisture Sensitivity Level	3	Number of Terminals	66
Number of Words	16777216 words	Number of Words Code	16000000
Operating Temperature-Max	70 °C	Organization	16MX16
Output Characteristics	3-STATE	Package Body Material	PLASTIC/EPOXY
Package Code	TSSOP	Package Equivalence Code	TSSOP66,.46
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel)	260	Power Supplies	2.3 V
Qualification Status	Not Qualified	Refresh Cycles	8192
Sequential Burst Length	2,4,8	Standby Current-Max	0.003 A
Supply Current-Max	0.33 mA	Supply Voltage-Nom (Vsup)	2.3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	COMMERCIAL	Terminal Finish	TIN BISMUTH
Terminal Form	GULL WING	Terminal Pitch	0.635 mm
Terminal Position	DUAL

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The K4H561638H-UCB3 chip is a high-density synchronous dynamic random-access memory (SDRAM) chip commonly used in electronics such as smartphones, tablets, and other devices. It offers fast data transfer speeds and high storage capacity, making it ideal for demanding applications that require quick and efficient data processing.
Equivalent

The equivalent products of K4H561638H-UCB3 chip are Hynix HY5PS1G831C and Samsung K4H511638G-LCCC chips. They have similar specifications and can be used as alternatives for the K4H561638H-UCB3 chip.
Features

The K4H561638H-UCB3 is a 512MB DDR SDRAM module with a 64Mx64 configuration. It operates at a high-speed clock frequency of 166MHz and is organized as a 4-bank / 4-bank x 8,192 refresh (8,192 cycle), with a 64ms. The module supports 400MHz and is ideal for applications requiring high-speed memory functionality.
Pinout

The K4H561638H-UCB3 is a 512Mb DDR SDRAM chip with a 66-pin package. It has a 66-pin ball grid array (BGA) configuration and is used in computer memory modules. The pin functions include power supply, address inputs, data inputs/outputs, clock inputs, and control signals.
Manufacturer

The manufacturer of the K4H561638H-UCB3 is Samsung. Samsung is a South Korean multinational conglomerate company that specializes in electronics, mobile devices, semiconductors, and other technology products. Samsung is one of the largest technology companies in the world and a leading producer of memory chips and other semiconductor components.
Application Field

The K4H561638H-UCB3 is a 512MB DDR SDRAM module commonly used in desktop computers, laptops, networking equipment, and industrial applications. It is particularly suitable for high-performance computing tasks such as gaming, multimedia editing, and graphics rendering.
Package

The K4H561638H-UCB3 chip comes in a Ball Grid Array (BGA) package. It is in the form of a memory module and has a size of 54mm x 90mm.