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Infineon IPD036N04LGBTMA1

Name: IPD036N04LGBTMA1
Brand: Infineon
Rating: 4.8 (10 reviews)

DPAK-packaged N-channel MOSFET with 40V voltage and 90A current rating

브랜드: Infineon

제조업체부품 #: IPD036N04LGBTMA1

데이터 시트: IPD036N04LGBTMA1 데이터 시트 (PDF)

패키지/케이스: TO-252-3

상품 유형: Single FETs, MOSFETs

RoHS 상태:

재고상태: 5,588 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. IPD036N04LGBTMA1 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

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이메일^*

담당자 이름^*

회사

주목

IPD036N04LGBTMA1 일반적인 설명

Infineon Technologies introduces the IPD036N04LGBTMA1, a top-of-the-line power MOSFET transistor tailor-made for sophisticated power management setups. Built with a 40V maximum drain-source voltage and a continuous drain current capacity of 100A, this transistor is engineered to excel in high-demand scenarios. By harnessing cutting-edge OptiMOS 5 technology, the IPD036N04LGBTMA1 achieves superior efficiency and minimized conduction losses, offering unmatched performance in its class. Featuring an impressive 3.6mΩ low on-state resistance, this component is perfectly suited for high-current applications where reducing power losses is paramount. Encased in a user-friendly TO-252 package, this transistor allows for easy and secure mounting on PCBs while ensuring dependable operation. Its sleek and lightweight design makes it the perfect choice for applications with space limitations. Choose the IPD036N04LGBTMA1 for your power management requirements and witness the unbeatable reliability, efficiency, and performance that Infineon Technologies is renowned for

특징

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Avalanche rated
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21

명세서

매개변수	값	매개변수	값
Manufacturer	Infineon	Product Category	MOSFET
RoHS	Details	Technology	Si
Mounting Style	SMD/SMT	Package / Case	DPAK-3 (TO-252-3)
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	90 A
Rds On - Drain-Source Resistance	3 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V	Qg - Gate Charge	78 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	94 W	Channel Mode	Enhancement
Tradename	OptiMOS	Series	OptiMOS 3
Brand	Infineon Technologies	Configuration	Single
Fall Time	6 ns	Forward Transconductance - Min	85 S
Height	2.3 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	5.4 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	37 ns
Typical Turn-On Delay Time	9.3 ns	Width	6.22 mm
Part # Aliases	IPD036N04L G SP000387945

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.