주문 금액이
$5000Infineon IAUS300N08S5N012ATMA1
N-Channel 80 V 300A (Tc) 375W (Tc) Surface Mount PG-HSOG-8-1
브랜드: Infineon
제조업체부품 #: IAUS300N08S5N012ATMA1
데이터 시트: IAUS300N08S5N012ATMA1 데이터 시트 (PDF)
패키지/케이스: HSOG-8
상품 유형: Single FETs, MOSFETs
IAUS300N08S5N012ATMA1 일반적인 설명
Infineon Technologies presents the IAUS300N08S5N012ATMA1 diode module as part of its EconoDUAL3 family of products, specifically designed for high-power applications that demand efficiency and reliability. With a current rating of 300A and a voltage rating of 1200V, this module is ideal for use in industrial drives, renewable energy systems, and traction applications. Its N-channel IGBT technology enables low conduction and switching losses, resulting in enhanced efficiency and reduced power dissipation. The module's standard EconoDUAL3 housing ensures excellent thermal performance and power density, making it a versatile solution for various power electronics applications. Moreover, the module incorporates several protection features such as short-circuit protection, over-temperature protection, and under-voltage lockout to guarantee safe and reliable operation in challenging environments. Additionally, the module complies with RoHS regulations, underscoring its commitment to environmental sustainability and regulatory compliance
특징
- Series: CoolMOS S5
- Package/Case: TO-247-3
- MOSFET type: N-Channel
애플리케이션
- Next-gen automation
- High-performance tools
- Remote energy management
명세서
매개변수 | 값 | 매개변수 | 값 |
---|---|---|---|
Manufacturer: | Infineon | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | HSOG-8 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 80 V | Id - Continuous Drain Current: | 300 A |
Rds On - Drain-Source Resistance: | 1.7 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3.8 V | Qg - Gate Charge: | 231 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 375 W | Channel Mode: | Enhancement |
Packaging: | Cut Tape | Brand: | Infineon Technologies |
Configuration: | Single | Fall Time: | 55 ns |
Product Type: | MOSFET | Rise Time: | 19 ns |
Factory Pack Quantity: | 1800 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 69 ns |
Typical Turn-On Delay Time: | 31 ns | Part # Aliases: | IAUS300N08S5N012 SP001643336 |
Unit Weight: | 0.027197 oz |
배송
배송 유형 | 배송비 | 리드타임 | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
페덱스 | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 날 | |
등기 항공 우편 | $20.00-$40.00 (0.50 KG) | 2-5 날 |
처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.
지불
지불 조건 | 핸드 수수료 | |
---|---|---|
은행 송금 | US$30.00의 은행 수수료를 부과합니다. | |
페이팔 | 4.0%의 서비스 수수료를 부과합니다. | |
신용 카드 | 3.5% 서비스 수수료를 부과합니다. | |
웨스턴 유니언 | charge US.00 banking fee. | |
돈 그램 | US$0.00의 은행 수수료를 부과합니다. |
보증
1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.
2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.
포장
-
단계1 :제품
-
단계2 :진공 포장
-
단계3 :정전기 방지 가방
-
단계4 :개별 포장
-
단계5 :포장 상자
-
단계6 :바코드 배송 태그
모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.
외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.
우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.
모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.
부품 포인트
-
The IAUS300N08S5N012ATMA1 is a high-performance, power-efficient chip designed for use in mobile devices, such as smartphones and tablets. It features advanced technology for faster processing speeds and lower power consumption, making it ideal for demanding applications and multitasking. This chip offers a balance of performance and energy efficiency for improved user experience.
-
Equivalent
The equivalent products of IAUS300N08S5N012ATMA1 chip are the NTR300N08T1G and NDP6020P. These are both N-channel power MOSFETs with similar specifications and performance characteristics. -
Features
1. Part Number: IAUS300N08S5N012ATMA1 2. Current Rating: 300A 3. Voltage Rating: 800V 4. Package: S5 5. Configuration: Half Bridge 6. Application: Motor Control 7. Technology: Trench-Gate IGBT 8. Fast switching and high efficiency. -
Pinout
The IAUS300N08S5N012ATMA1 is a power IC with 12 pins. It is used for controlling and regulating power in automotive applications, specifically in brushless DC motor drives. Some of its functions include overcurrent protection, undervoltage lockout, and thermal shutdown to ensure safe and efficient operation. -
Manufacturer
Infineon Technologies is the manufacturer of IAUS300N08S5N012ATMA1. It is a German semiconductor company that offers a wide range of products including power semiconductors, microcontrollers, sensors, and other electronic components for various industries such as automotive, industrial, and consumer electronics. -
Application Field
IAUS300N08S5N012ATMA1 is commonly used in power management applications, motor control, uninterruptible power supplies, and solar inverters. It is suitable for various industrial automation and robotics applications, as well as grid-tied inverters and industrial drives. The module's high power density and efficiency make it ideal for demanding power electronic systems. -
Package
The IAUS300N08S5N012ATMA1 chip is packaged in a surface mount TO-252-3 (DPAK) form with a size of 6.63mm x 9.6mm.
우리는 고품질 제품, 사려 깊은 서비스 및 판매 후 보증을 제공합니다.
-
우리는 풍부한 제품을 보유하고 있으며 귀하의 다양한 요구를 충족시킬 수 있습니다.
-
최소 주문 수량은 1개부터입니다.
-
최저 국제 배송비는 $0.00부터 시작됩니다
-
모든 제품에 대해 365일 품질 보증