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TSOP-54
(총 185개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| MT48LC8M16A2P-7E:G | Ultra-low latency SDRAM ideal for high-speed computing | Micron Technology | 5,331 | BOM에 추가 |
| MT48LC32M8A2P-6A:G | Compact high-capacity memory solution for your application nee | Micron Technology | 9,458 | BOM에 추가 |
| IS42S16800E-7TLI | The IS42S16800E-7TLI chip is designed to provide improved performance and capacity for demanding applications such as gaming | Issi | 9,458 | BOM에 추가 |
| HY57V641620FTP-7 | The HY57V641620FTP-7's 64M-bit architecture provides an unparalleled level of data storage and retrieval | Sk Hynix Inc | 32 | BOM에 추가 |
| H57V2562GTR-75C | Advanced CMOS technology ensures reliable and efficient memory acces | Hynix | 5,345 | BOM에 추가 |
| CY7C1069DV33-10ZSXI | Available for immediate shipment | Infineon | 9,458 | BOM에 추가 |
| CY7C1061AV33-10ZXI | This 16Mbit parallel SRAM IC offers reliable performance, compact design, and fast access times in a 54-TSOP II package | Infineon | 8,478 | BOM에 추가 |
| MT48LC32M16A2TG-75IT:C | DRAM Chip SDRAM 512M-Bit 32Mx16 3.3V 54-Pin TSOP-II Tray | Micron Technology | 8,774 | BOM에 추가 |
| MT48LC16M16A2P-6AIT:G | TSOP-II package | Micron | 5,396 | BOM에 추가 |
| K4S641632H-TC75 | Plastic TSOP SDRAM, 4M x 16, 54 Pin | Samsung Semiconductor | 7,434 | BOM에 추가 |
| K4S511632D-UC75 | Electronic distributor from France established in 1988 | Samsung Semiconductor | 6,424 | BOM에 추가 |
| IS42S16800A-7TL | 5.4 ns Access Time | Issi | 9,458 | BOM에 추가 |
| MT48LC16M16A2P-6A:G | Ultra-fast memory solution for real-time processin | Micron Technology | 7,912 | BOM에 추가 |
| IS42S16160J-7TLI | 5.4 nanoseconds | ISSI | 5,450 | BOM에 추가 |
| MT48LC8M16A2P-6A IT:L | High-speed, high-reliability memory for industrial applications | Micron Technology | 9,458 | BOM에 추가 |
| MT48LC8M16A2P-6A:L | Reliable performance for a wide range of industries and scenario | Micron Technology | 9,458 | BOM에 추가 |
| IS42S16800E-7TL | s memory capabilities with this ISS-L SDRAM module | ISSI | 9,458 | BOM에 추가 |
| IS42S16160B-7TL | Operating frequency of 143MHz for high-speed data processing | ISSI | 6,958 | BOM에 추가 |
| IS42S16320B-7TLI | 54-Pin Thin Small Outline Package II | ISSI, Integrated Silicon Solution Inc | 7,685 | BOM에 추가 |
| IS42S16160D-6TL | 16MX16 Synchronous DRAM, 5.4ns, CMOS, PDSO54 | ISSI | 9,458 | BOM에 추가 |
| CY7C1061AV33-10ZXC | Boasting a rapid 10ns access time, this 3.3V SRAM chip offers reliable performance in demanding applications." | Infineon | 9,458 | BOM에 추가 |
| CY7C10612DV33-10ZSXI | ROHS Pre-ordered Products CY7C10612DV33-10ZSXI TSOP-54 | Infineon | 9,458 | BOM에 추가 |
| AS4C16M16S-7TCN | This synchronous dynamic random access memory module comprises 16 million memory cells arranged in a 16x16 layout, operates at a speed of 5 | Alliance | 270 | BOM에 추가 |
| MT48LC16M16A2TG-7E | High-capacity RAM component ideal for demanding applications and multitasking environments | MICRON | 97 | BOM에 추가 |
| K4S641632K-UC75 | Synchronous DRAM with 4MX16 capacity and 5.4ns speed in CMOS package with PDSO54 | SAMSUNG | 7,349 | BOM에 추가 |
| K4S561632H-UC75 | 3.3V voltage-operated SDRAM chip with a capacity of 256 million bits | SAMSUNG | 5,403 | BOM에 추가 |
| CY7C1061AV33-10ZI | Next-generation memory technology optimizes data integrity and reliability in mission-critical systems | Infineon | 9,458 | BOM에 추가 |
| CY7C1069AV33-10ZXC | 2M X 8 STANDARD SRAM 10 ns PDSO54 | Infineon Technologies Corporation | 2,461 | BOM에 추가 |
| K4S641632F-TI75 | A high-quality memory product for demanding applications: K4S64S16K32F-75T | Samsung | 8,385 | BOM에 추가 |
| MT48LC16M16A2TG-75 IT:D TR | 256Mbit Memory Module | Micron Technology | 8,447 | BOM에 추가 |
| MT48LC4M16A2P-7E:J | Lead free plastic packaging, TSOP2-54 technology | Micron Technology | 5,253 | BOM에 추가 |
| MT48LC32M16A2P-75:C | Low-latency 5.4 ns SDRAM chip ideal for applications requiring quick access to data | Alliance Memory | 6,884 | BOM에 추가 |
| MT48LC16M16A2P-6A:G TR | DRAM Memory Chip for SDR SDRAM Technology | Micron Technology | 9,479 | BOM에 추가 |
| IS42S16800D-7TL | 8 million x 16 memory configuration | issi | 8,561 | BOM에 추가 |
| IS42S16320B-7TL | 512 Megabit Synchronous DRAM Chip with a 32 Megabit x 16 organization, operating at 3.3 volts in a 54-pin TSOP-II package | Issi | 5,927 | BOM에 추가 |
| IS42S16800A-7T | Synchronous DRAM with 8 million x 16 data storage capacity, operating at 5.4 nanoseconds, in a 54-pin plastic SMT package | ISSI | 9,458 | BOM에 추가 |
| AS4C8M16S-7TCN | High-speed 8M x 16 Synchronous DRAM with 3.3V voltage | Alliance Memory | 8,743 | BOM에 추가 |
| A3V56S40GTP-60 | This product is a 256Mb DRAM SDRAM module with a capacity of 16Mx16 | ZENTEL | 5,352 | BOM에 추가 |
| MT48LC64M8A2P-75:C | 133Mhz Synchronous Dynamic Random Access Memory | Alliance Memory | 5,819 | BOM에 추가 |
| IS42S16400J-6TLI | A high-speed dynamic random access memory (DRAM) chip designed for use in electronics that require fast data processing | Issi | 9,776 | BOM에 추가 |
| MR4A16BCYS35 | Surface mount MRAM memory IC offering 16Mb storage capacity, parallel 16-bit data format, 1Mx16 configuration, 35ns access time | Everspin Technologies | 9,919 | BOM에 추가 |
| AS4C16M16SA-7TCN | Memory solution with high bandwidth and low latency requirements | Alliance Memory | 7,695 | BOM에 추가 |
| AS4C32M16SM-7TIN | This product is a 512Mb SDRAM with a configuration of 32Mx16 and operates at a speed of 133MHz. It comes in a TSOP packaging | Alliance Memory, Inc. | 8,051 | BOM에 추가 |
| AS4C32M16SA-7TIN | AS4C32M16SA-7TIN is a 32Mx16 Synchronous DRAM module with 5 | Alliance Memory | 9,458 | BOM에 추가 |
| IS42S16320F-6TLI | Low power consumption enables extended battery li | ISSI, Integrated Silicon Solution Inc | 9,528 | BOM에 추가 |
| MT48LC16M16A2P-7E:D | High-speed memory solution for demanding applications | Micron Technology | 9,267 | BOM에 추가 |
| MT48LC8M16A2P-6A:G | High-speed SDRAM for high-performance applications | Micron Technology | 9,458 | BOM에 추가 |
| K4S641632H-UC75 | Advanced SDR-technology ensures stable and fast data transmission up to Hz frequenc | SAMSUNG | 7,752 | BOM에 추가 |
| K4S561632E-UC75 | The chip operates at a voltage of 3.3V and comes in a 54-pin Thin Small Outline Package (TSOP-II) | SAMSUNG | 6,394 | BOM에 추가 |
| K4S641632K-UC60 | Synchronous DRAM | SAMSUNG | 4,804 | BOM에 추가 |
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