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TO-247-3
(총 1804개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| IXYH40N120B3D1 | GenX3™ IGBT Transistor, 1.2kV, 40A, 480W, TO247-3 | IXYS | 5,642 | BOM에 추가 |
| KSQ15A04 | Product Description: KSQ15A04 | KYOCERA AVX | 9,458 | BOM에 추가 |
| KSF30A40B | Reliable and robust switching solution for industrial control system | KYOCERA AVX | 9,458 | BOM에 추가 |
| KCH30A20 | Schottky diode with a voltage rating of 200V and a current rating of 30A in a TO-247 package | KYOCERA AVX | 9,548 | BOM에 추가 |
| KCF25A20 | The KCF25A20: A 3-pin TO-247 Diode Switching Component, rated at 200V and 25A | Kyocera Corporation | 8,655 | BOM에 추가 |
| IRGP4660DPBF | Infineon's IRGP4660DPBF IGBT is designed for 60 amps and 600 volts, packaged in the TO-247AC with 3 pins | International Rectifier | 5,377 | BOM에 추가 |
| IXYH40N90C3D1 | IXYH40N90C3D1 Transistor: 900V, 90A, TO-247AD | IXYS | 6,148 | BOM에 추가 |
| IRGP4640DPBF | Robust and reliable for high-reliability designs | Infineon Technologies | 9,345 | BOM에 추가 |
| GA50JT12-247 | 1200V/100A JFET with standard specifications | GeneSiC Semiconductor | 8,253 | BOM에 추가 |
| IXDH30N120D1 | N-Channel IGBT Chip for Transistor 1200V 60A 300W 3-Pin(3+Tab) | IXYS | 9,458 | BOM에 추가 |
| IRG4PH40UDPBF | This product is a combination of IGBT and anti-parallel diode in a single package | Infineon Technologies | 5,120 | BOM에 추가 |
| IXGH16N170A | Contact us for further details | IXYS | 9,007 | BOM에 추가 |
| APT30GT60BRG | Insulated Gate Bipolar Transistor - NPT Standard Speed APT30GT60BRG | Microchip Technology | 6,982 | BOM에 추가 |
| IRG4PH30KPBF | N-Channel IGBT Chip with 1200V Voltage Rating, 20A Current Rating, and 100W Power Rating in TO-247AC Package | Infineon | 9,458 | BOM에 추가 |
| SF3006PT | Rugged and reliable component suitable for harsh environment | Taiwan Semiconductor Corporation | 6,392 | BOM에 추가 |
| IXZR08N120 | 1200V N Channel ZMOS Switch MOSFET RF MOSFET Transistors ISO PLUS 247 08A | IXYS-RF | 7,108 | BOM에 추가 |
| FGH50N6S2 | Powerful FGHNIGBT chip for high-reliability applications | Fairchild Semiconductor | 5,255 | BOM에 추가 |
| KSF60F60B | Rectifiers for fast recovery with 600V and 60A | KYOCERA AVX | 9,458 | BOM에 추가 |
| VS-60APH03-N3 | Rectifier Diode, 1 Phase, 1 Element, 60A, 300V VRRM, Silicon, TO-247AC, Halogen-Free and RoHS Compliant, Plastic Package-3 | Vishay General Semiconductor - Diodes Division | 7,429 | BOM에 추가 |
| VS-80APS12-M3 | 80A 3-Pin Diode Switching Tube | Vishay General Semiconductor - Diodes Division | 6,506 | BOM에 추가 |
| IDW75D65D1XKSA1 | Robust IGBT solution for industrial power applications | Infineon Technologies | 5,269 | BOM에 추가 |
| IXFH220N20X3 | Efficient energy management tool for renewable energy systems and smart grids | IXYS | 5,049 | BOM에 추가 |
| IXTH220N20X4 | IXTH220N20X4: MOSFET Device for High Power Applications | IXYS | 8,327 | BOM에 추가 |
| IXFH150N30X3 | IXFH150N30X3 is a high-performance N-channel MOSFET with ultra junction technology | IXYS | 9,458 | BOM에 추가 |
| IXFH100N30X3 | TO247-3 packaged N-MOSFET transistor | IXYS | 9,458 | BOM에 추가 |
| MSC035SMA070B | This MOSFET has a low on-resistance of 44mΩ at 30A and a power dissipation of 283W at 20V | Microchip Technology | 8,896 | BOM에 추가 |
| MSC050SDA120B | Diode 1200 V 109A Through Hole TO-247-3 | MICROCHIP TECHNOLOGY INC | 6,257 | BOM에 추가 |
| MSC035SMA170B | N-Channel 1700 V 68A (Tc) 370W (Tc) Through Hole TO-247-3 | Microchip Technology | 7,733 | BOM에 추가 |
| MSC025SMA120B | MSC025SMA120B: A MOSFET featuring Silicon Carbide (SiC) technology | Microchip | 6,576 | BOM에 추가 |
| MSC080SMA120B | Silicon Carbide N-Channel MOSFET 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube | Microchip Technology | 9,268 | BOM에 추가 |
| MSC015SMA070B | SILICON CARBIDE MOSFETs, represented by product MSC015SMA070B, offer advanced functionality and reliability in various electronic systems | Microchip Technology | 6,055 | BOM에 추가 |
| IXTH80N65X2 | Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247 | IXYS | 9,458 | BOM에 추가 |
| IXTH34N65X2 | IXTH34N65X2 Power Field-Effect Transistor | IXYS | 9,941 | BOM에 추가 |
| IXTH48N65X2 | Learn more about the Power Field-Effect Transistor IXTH48N65X2 | IXYS | 9,458 | BOM에 추가 |
| IXFX120N65X2 | Robust design for heavy-duty power control system | IXYS | 9,458 | BOM에 추가 |
| IXFX120N20 | MOSFET with a voltage rating of 200V and a current rating of 120A | Littelfuse | 5,273 | BOM에 추가 |
| IXFH34N65X2 | Reliable and A operation in through-hole packag | IXYS | 7,140 | BOM에 추가 |
| IXFH12N90 | N-Channel Silicon Metal-oxide Semiconductor FET | Littelfuse | 8,368 | BOM에 추가 |
| TIP141G | Bipolar (BJT) Transistor NPN - Darlington 80 V 10 A 125 W Through Hole TO-247-3 | onsemi | 6,797 | BOM에 추가 |
| TIP140G | Bipolar (BJT) Transistor NPN - Darlington 60 V 10 A 125 W Through Hole TO-247-3 | onsemi | 8,761 | BOM에 추가 |
| STW21NM50N | Three-pin MOSFET with tab included for easy mounting | Stmicroelectronics | 8,954 | BOM에 추가 |
| STW13NK80Z | 00V Si technology | Stmicroelectronics | 9,458 | BOM에 추가 |
| STW15NB50 | High-Voltage N-Channel MOSFET Transistor in TO-247AA Package | Stmicroelectronics | 8,473 | BOM에 추가 |
| STW60NM50N | MOSFET N-channel with a voltage rating of 500V, a low resistance of 0 | Stmicroelectronics | 8,541 | BOM에 추가 |
| STW9NB80 | 800 Volt N-Channel MOSFET with 9 Amp capability | Stmicroelectronics | 9,627 | BOM에 추가 |
| STW20NA50 | TO-247 Package N-Channel Power MOSFET with 3 Pins | Stmicroelectronics | 7,290 | BOM에 추가 |
| SCH2080KEC | Compact power device suitable for DC-DC converters, motor drives, and other high-power systems | Rohm Semiconductor | 7,979 | BOM에 추가 |
| NTD5867NL-1G | Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK INSERTION MOUNT, 75-TUBE | onsemi | 9,458 | BOM에 추가 |
| NTD4963N-35G | Power MOSFET 30V 44A 9.6 mOhm Single N-Channel DPAK | onsemi | 9,458 | BOM에 추가 |
| MTW32N20E | MTW32N20E stands out as a high-performance Power MOSFET suitable for demanding applications with its single N-channel configuration | Onsemi | 7,849 | BOM에 추가 |
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