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PC48F4400P0VB0EF

Name: PC48F4400P0VB0EF
Rating: 4.5 (10 reviews)

Non-volatile memory chip for legacy devices

브랜드: Micron Technology

제조업체부품 #: PC48F4400P0VB0EF

데이터 시트: PC48F4400P0VB0EF 데이터 시트 (PDF)

패키지/케이스: BGA-64

상품 유형: 메모리

RoHS 상태:

재고상태: 6,554 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. PC48F4400P0VB0EF 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

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이메일^*

담당자 이름^*

회사

주목

PC48F4400P0VB0EF 일반적인 설명

Micron Technology's PC48F4400P0VB0EF is a game-changing NAND Flash memory chip, offering a 4 gigabit capacity and a Parallel NOR Flash interface. Operating at 3.3 volts and utilizing a x8 configuration, this chip provides fast access times and low power consumption, making it an ideal solution for embedded systems, industrial applications, and consumer electronics. Its robust data retention and high-density storage capabilities make it a reliable choice for any project requiring non-volatile storage

특징

High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz (zero wait states)
—60ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst mode reads
— Burst and Page mode reads in all Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 µs/word
Security
—128-BitOTP Protection Register:
64 unique pre-programmed bits + 64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability
Quality and Reliability
—Temperature Range:–40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 µs (typ.) Program and Erase Suspend latency time
— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC= 1.70 V to 1.95 V
—VCCQ(90 nm) = 1.7 V to 1.95 V
—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
—VCCQ(130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 µA (typ.)
— Read current: 8 mA (4-word burst, typ.)

명세서

매개변수	값	매개변수	값
Product Status	Obsolete	Programmabe	Not Verified
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NOR (MLC)	Memory Size	512Mbit
Memory Organization	32M x 16	Memory Interface	CFI
Clock Frequency	52 MHz	Write Cycle Time - Word, Page	-
Access Time	110 ns	Voltage - Supply	1.7V ~ 2V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Package / Case	64-TBGA	Supplier Device Package	64-EasyBGA (10x13)
Manufacturer	Micron Technology	Product Category	NOR Flash
Mounting Style	SMD/SMT	Series	P30
Supply Voltage - Min	2.3 V	Supply Voltage - Max	3.6 V
Active Read Current - Max	50 mA	Interface Type	Parallel
Maximum Clock Frequency	52 MHz	Organization	32 M x 16
Data Bus Width	16 bit	Timing Type	Asynchronous, Synchronous
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Brand	Micron	Product Type	NOR Flash
Speed	95 ns	Standard	Common Flash Interface (CFI)
Factory Pack Quantity	2000	Subcategory	Memory & Data Storage
Type	Boot Block

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.