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IS43TR16256A-125KBLI

Name: IS43TR16256A-125KBLI
Rating: 4.5 (10 reviews)

Enhance your system's memory capacity with the high-performance IS43TR16256A-125KBLI DDR3 SDRAM chip."

브랜드: INTEGRATED SILICON SOLUTION INC

제조업체부품 #: IS43TR16256A-125KBLI

데이터 시트: IS43TR16256A-125KBLI 데이터 시트 (PDF)

패키지/케이스: 96-TWBGA (9x13)

상품 유형: 메모리

RoHS 상태:

재고상태: 7,391 PC, 새로운 원본

Warranty: 1 Year Ovaga Warranty - Find Out More

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. IS43TR16256A-125KBLI 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

수량^*

이메일^*

담당자 이름^*

회사

주목

IS43TR16256A-125KBLI 일반적인 설명

The IS43TR16256A-125KBLI from Integrated Silicon Solution Inc. represents a new era in memory chip technology, offering high-speed performance and energy efficiency in a compact and reliable form factor. Its compatibility with various electronic devices and advanced power-saving features make it an ideal choice for today's mobile and energy-conscious applications

특징

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200 MHz in DLL off mode
Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)

명세서

매개변수	값	매개변수	값
Rohs Code	Yes	Part Life Cycle Code	Obsolete
Ihs Manufacturer	INTEGRATED SILICON SOLUTION INC	Package Description	TFBGA,
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.36	Samacsys Manufacturer	Integrated Silicon Solution Inc.
Access Mode	MULTI BANK PAGE BURST	Access Time-Max	0.1 ns
Additional Feature	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	JESD-30 Code	R-PBGA-B96
Length	13 mm	Memory Density	4294967296 bit
Memory IC Type	DDR DRAM	Memory Width	16
Number of Functions	1	Number of Ports	1
Number of Terminals	96	Number of Words	268435456 words
Number of Words Code	256000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	256MX16	Package Body Material	PLASTIC/EPOXY
Package Code	TFBGA	Package Shape	RECTANGULAR
Package Style	GRID ARRAY, THIN PROFILE, FINE PITCH	Seated Height-Max	1.2 mm
Self Refresh	YES	Supply Voltage-Max (Vsup)	1.575 V
Supply Voltage-Min (Vsup)	1.425 V	Supply Voltage-Nom (Vsup)	1.5 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Width	9 mm

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The IS43TR16256A-125KBLI chip is a memory device commonly used in electronic devices such as smartphones, tablets, and computers. It offers a storage capacity of 256 megabytes and operates at a clock frequency of 125 MHz. Designed for high-speed data transfer, it uses a synchronous interface and provides reliable performance and low power consumption.
Features

IS43TR16256A-125KBLI is a 256Mb DDR3L SDRAM memory chip. It operates at a speed of 125MHz and supports a dual data rate of 800Mbps. The chip has a low voltage operation of 1.35V and offers high bandwidth, low power consumption, and non-volatile storage capabilities.
Pinout

The IS43TR16256A-125KBLI has a pin count of 90 and is a Double Data Rate (DDR) synchronous DRAM (SDRAM) chip. It is primarily used for high-performance applications, offering a storage capacity of 256 megabits (32 megabytes). The functions of its pins include data input/output, address inputs, control signals, and power connections.
Manufacturer

The IS43TR16256A-125KBLI is manufactured by Integrated Silicon Solution Inc. (ISSI). ISSI is a semiconductor company that specializes in the design, development, and production of high-performance integrated circuits for a wide range of applications, including automotive, industrial, consumer, and communications markets.
Application Field

The IS43TR16256A-125KBLI is a 4Gb (512Mx8, 256Mx16) synchronous DRAM designed for high-speed memory systems. It can be used in various applications such as mobile devices, networking equipment, graphics cards, and automotive electronics, where high-density and low-power consumption memory is required.
Package

The IS43TR16256A-125KBLI chip is available in a package type called BGA (Ball Grid Array). Its form is a 12mm x 14mm 96-ball BGA package, making it compact and suitable for various electronic applications.