NXP FGA25N120

FGA25N120 일반적인 설명

Pin Configuration

Gate: Controls the biasing of the IGBT.
Collector: Current flows in through the collector.
Emitter: Current flows out through the emitter.

2D model

특징

Type: High voltage and high current IGBT with NPT Trench Technology.
Voltage Rating: Collector-Emitter Voltage (VCE) of 1200V.
Current Rating: Collector Current (IC) of up to 50A at 25°C.
Gate Saturation Voltage: Very low gate saturation voltage of 2V, suitable for low-voltage driver-side designs.
Gate Threshold Voltage (VGE): Minimum threshold voltage is 3.5V, maximum is 7.5V.
Gate-Emitter Voltage (VGE): ±20V maximum.
Switching Times: Rise time of approximately 60ns, fall time of approximately 100ns.
Package: Available in To-3P package.

애플리케이션

High Voltage, High Current Switching Devices: As mentioned, this IGBT is designed for high voltage and high current switching applications, making it suitable for various power electronics and motor control applications.

Induction Heating: Induction heating systems use high-frequency alternating current to heat conductive materials. IGBTs can be used in the power stages of these systems to control and regulate the heating process efficiently.

Microwave Oven: Microwave ovens use high-power microwave radiation to heat and cook food. IGBTs can be used in the power supply and control circuits of these appliances.

Large Solenoids: Solenoids are electromagnetic devices that generate linear motion when energized. Large solenoids used in industrial applications often require high current control, which IGBTs can provide.

Tesla Coils: Tesla coils are high-frequency resonant transformers used for various purposes, including wireless transmission of electricity and educational demonstrations. IGBTs can be used in the primary and secondary circuits of Tesla coils.

Converters or Inverter Circuits: IGBTs are commonly used in converters and inverter circuits to convert DC power to AC power or vice versa. These circuits are essential in many applications, including motor drives, renewable energy systems (such as solar inverters), and uninterruptible power supplies (UPS).

Alternatives

FGA15N120
TA49123
FGA180N33

FAQ

Where to Implement the FGA25N120 IGBT?

The FGA25N120 stands as a high-voltage, high-current IGBT, capable of proficiently managing voltage levels as considerable as 1200V, coupled with a robust current-handling capability of 50A at 25°C. Impressively, it can effectively tackle momentary current surges, reaching a peak of up to 90A, rendering it ideal for applications that entail substantial voltage and current spikes.

Employing Non Punch Through (NPT) Technology, this IGBT exhibits minimal switching loss and a low saturation voltage. This exceptional characteristic makes it a viable choice for low-voltage switching driver configurations, delivering commendable efficiency within its operational parameters. However, it's crucial to acknowledge that, akin to other IGBTs, the FGA25N120 has its drawbacks, including relatively slower switching speeds and a higher voltage drop across the collector and emitter in comparison to MOSFETs. Therefore, if your design necessitates higher efficiency and swifter switching capabilities, MOSFETs might be the preferred choice. On the other hand, IGBTs excel in applications characterized by elevated switching voltage and current requirements.

How to Use the FGA25N120?

An IGBT can be likened to a fusion of a MOSFET and a BJT, evident in its pin configuration. It boasts a gate on the input side, reminiscent of a MOSFET, and collector and emitter terminals on the output side, resembling a BJT. This amalgamation allows the IGBT to harness the advantages of both MOSFETs and BJTs.

Much like a MOSFET, triggering the gate pin of the IGBT is essential to activate the switch. In the case of the FGA25N120, the minimum gate saturation voltage stands at 2V, but it's customary to employ 5V in most designs. To determine the required gate trigger voltage, it can be calculated based on the collector-emitter voltage and the collector current to be switched, referencing the graph provided in the datasheet.

Once the gate is triggered, the IGBT remains in the "on" state, even after the trigger voltage is removed, similar to a MOSFET. This behavior arises from the gate capacitance present at the input gate pin of the IGBT. To deactivate the device, the gate capacitance must be discharged, typically achieved by connecting the gate pin of the IGBT to ground. Consequently, it's common practice to connect the gate pin of the IGBT to ground through a pull-down resistor of 10k or to utilize a dedicated gate driver IC like the IR2104.

It's paramount to exercise caution when implementing IGBTs in switching circuits, ensuring they are not employed in high-frequency designs. This precaution is essential because the collector-emitter voltage drop (switching loss) of the IGBT escalates with increasing switching frequency.