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Infineon CY7C15632KV18-400BZXI

Name: CY7C15632KV18-400BZXI
Brand: Infineon
Rating: 4.8 (10 reviews)

High-speed SRAM chip organized as 4Mx18

브랜드: Infineon

제조업체부품 #: CY7C15632KV18-400BZXI

데이터 시트: CY7C15632KV18-400BZXI 데이터 시트 (PDF)

패키지/케이스: FBGA-165

RoHS 상태:

재고상태: 9,458 PC, 새로운 원본

상품 유형: 메모리

Warranty: 1 Year Ovaga Warranty - Find Out More

가격

*모든 가격은 USD 단위입니다.

수량	단가	추가 가격
1	$169.159	$169.159
200	$65.463	$13092.600
500	$63.162	$31581.000
1000	$62.026	$62026.000

재고: 9,458 PCS

- +

빠른 견적

다음에 대한 RFQ를 제출해 주십시오. CY7C15632KV18-400BZXI 또는 우리에게 이메일을 보내: 이메일: [email protected], 12시간 이내에 연락드리겠습니다.

수량^*

이메일^*

담당자 이름^*

회사

주목

CY7C15632KV18-400BZXI 일반적인 설명

The CY7C15632KV18-400BZXI from Cypress Semiconductor is engineered to meet the demands of high-performance computing applications. With a capacity of 512 megabytes and a speed of 400 MHz, this double data rate synchronous dynamic random access memory (DDR SDRAM) module delivers fast and reliable memory access. Its 184-pin edge connector ensures easy installation in compatible devices, making it a convenient choice for tech enthusiasts and professionals looking to upgrade their systems

특징

Separate independent read and write data ports ❐ Supports concurrent transactions
450 MHz clock for high bandwidth
Two-word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz
Available in 2.5 clock cycle latency
Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only
Echo clocks (CQ and CQ) simplify data capture in high speed systems
Data valid pin (QVLD) to indicate valid data on the output
Single multiplexed address input bus latches address inputs for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR™-II+ Xtreme operates with 2.5 cycle read latency when DOFF is asserted HIGH
Operates similar to QDR-I device with 1 cycle read latency when DOFF is asserted LOW
Available in × 18, and × 36 configurations
Full data coherency, providing most current data
Core VDD = 1.8 V± 0.1 V; I/Os VDDQ = 1.4 V to 1.6 V ❐ Supports 1.5 V I/O supply
HSTL inputs and variable drive HSTL output buffers
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible test access port
Phase-Locked Loop (PLL) for accurate data placement

명세서

매개변수	값	매개변수	값
Manufacturer:	Infineon	Product Category:	SRAM
RoHS:	Details	Memory Size:	72 Mbit
Organization:	4 M x 18	Access Time:	450 ps
Maximum Clock Frequency:	400 MHz	Interface Type:	Parallel
Supply Voltage - Max:	1.9 V	Supply Voltage - Min:	1.7 V
Supply Current - Max:	710 mA	Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C	Mounting Style:	SMD/SMT
Package / Case:	FBGA-165	Packaging:	Tray
Brand:	Infineon Technologies	Data Rate:	QDR-II
Memory Type:	QDR	Moisture Sensitive:	Yes
Number of Ports:	2	Product Type:	SRAM
Series:	CY7C15632KV18	Factory Pack Quantity:	136
Subcategory:	Memory & Data Storage

배송

	배송비	리드타임
DHL	$20.00-$40.00 (0.50 KG)	2-5 날
페덱스	$20.00-$40.00 (0.50 KG)	2-5 날
UPS	$20.00-$40.00 (0.50 KG)	2-5 날
TNT	$20.00-$40.00 (0.50 KG)	2-5 날
EMS	$20.00-$40.00 (0.50 KG)	2-5 날
등기 항공 우편	$20.00-$40.00 (0.50 KG)	2-5 날

처리 시간: 배송비는 지역 및 국가에 따라 다릅니다.

지불

지불 조건		핸드 수수료
	은행 송금	US$30.00의 은행 수수료를 부과합니다.
	페이팔	4.0%의 서비스 수수료를 부과합니다.
	신용 카드	3.5% 서비스 수수료를 부과합니다.
	웨스턴 유니언	charge US.00 banking fee.
	돈 그램	US$0.00의 은행 수수료를 부과합니다.

보증

1. 귀하가 구입한 전자 부품에는 365일 보증이 포함되어 있으며, 우리는 제품 품질을 보장합니다.

2. 귀하가 받은 품목 중 일부가 완벽한 품질이 아닌 경우, 당사는 책임 있게 귀하의 환불 또는 교체를 준비할 것입니다. 그러나 품목은 원래 상태를 유지해야 합니다.

포장

단계1 :제품
단계2 :진공 포장
단계3 :정전기 방지 가방
단계4 :개별 포장
단계5 :포장 상자
단계6 :바코드 배송 태그

모든 제품은 정전기 방지 가방에 포장됩니다. ESD 정전기 방지 보호 장치와 함께 배송됩니다.

외부 ESD 포장 라벨은 당사 정보(부품 번호, 브랜드 및 수량)를 사용합니다.

우리는 선적 전에 모든 상품을 검사하고, 모든 제품이 양호한 상태인지 확인하고, 부품이 새로운 원본 일치 데이터시트인지 확인합니다.

모든 상품을 포장한 후 문제가 없는지 확인한 후 안전하게 포장하여 글로벌 특급으로 보내드립니다. 우수한 밀봉 무결성과 함께 탁월한 천공 및 인열 저항성을 나타냅니다.

부품 포인트

The CY7C15632KV18-400BZXI is a high-performance, low-power synchronous SRAM chip manufactured by Cypress Semiconductor. It operates at a speed of 400 MHz and has a capacity of 18 Mb. This chip is commonly used in networking, telecommunications, and industrial applications where fast and reliable memory access is required.
Equivalent

Some equivalent products of CY7C15632KV18-400BZXI chip are S29GL01GS12TFI010, MT41J512M4, and IS42S16320D.
Features

CY7C15632KV18-400BZXI is a high-performance double data rate synchronous SRAM with a density of 36Mb. It operates at a speed of 400 MHz and requires a supply voltage of 1.8V. It has a burst length of 4 or 8 and offers low latency for fast data access.
Pinout

CY7C15632KV18-400BZXI is a 324-pin BGA package DRAM with 72 bits, 18Mb, and a 400MHz clock speed. It is designed for high-performance networking, telecommunications, and data center applications. The device features a burst and pipeline architecture for increased data throughput.
Manufacturer

CY7C15632KV18-400BZXI is manufactured by Cypress Semiconductor Corporation, an American company that designs, manufactures, and sells a wide range of integrated circuits and semiconductor devices for a variety of industries including automotive, industrial, and consumer electronics. Cypress Semiconductor specializes in producing high-performance memory solutions, microcontrollers, and connectivity solutions.
Application Field

The CY7C15632KV18-400BZXI is commonly used in high-performance computing, networking, telecommunications, and industrial applications. It is suitable for data storage, high-speed communication, and processing large amounts of data in real-time. The device can also be used in aerospace and defense systems that require reliable, high-speed memory solutions.
Package

The CY7C15632KV18-400BZXI chip is a BGA (Ball Grid Array) package with a size of 15mm x 15mm and has 400 pins.