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TSOP-I
(총 45개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| K9F1G08U0C-PCB0 | 3.3 Voltage Operation | Samsung Electronics | 9,318 | BOM에 추가 |
| MT29F1G08ABADAWP-IT:D | With its SLC technology, this bit memory chip provides fast write speeds and low latency for efficient data acces | Micron Technology | 6,751 | BOM에 추가 |
| MT29F2G08ABAEAWP-IT:E | Advanced storage technology offering high-speed access and reliabilit | Micron Technology | 8,613 | BOM에 추가 |
| MT29F2G08ABAEAWP:E | Bulk Memory IC MT29F2G08ABAEAWP | Micron | 7,105 | BOM에 추가 |
| W29N01GVSIAA | Brand: Winbond Electronics Corporation | Winbond | 9,994 | BOM에 추가 |
| MX29LV160DBTI-70G | Flash memory chip in PDSO48 package with 70ns access time and 1 megabit x 16 configuration | Macronix International | 5,032 | BOM에 추가 |
| MX29GL512FLT2I-10Q | 56-pin TSOP-I packaged NOR Flash memory with 512M-bit capacity and a parallel data interface | Macronix International | 7,866 | BOM에 추가 |
| MX29GL320EBTI-70G | 48-Pin TSOP Package with 4M x 8 bit and 2M x 16 bit configurations | Macronix International | 9,819 | BOM에 추가 |
| MX29GL128FLT2I-90G | NOR flash memory chip | Macronix International | 5,509 | BOM에 추가 |
| MT29F8G08ABABAWP:B | High-density bit NAND Flash memory for robust data storage and processing capabilitie | Micron Technology | 5,487 | BOM에 추가 |
| MT29F4G16ABADAWP-IT:D | Low-voltage operation at 3.3V | Micron Technology | 7,573 | BOM에 추가 |
| MX29GL256FDT2I-11G | 256 Megabit Parallel Flash Integrated Circuit in 56-Pin TSOP | Macronix International | 8,944 | BOM에 추가 |
| MX29LV640EBTI-70G | NOR Flash 64M-bit 3V/3.3V Parallel Memory | Macronix | 8,442 | BOM에 추가 |
| MX29F400CBTI-70G | Memory Storage and Data Transfer Made Easy with MXFBTI- | Macronix International | 6,035 | BOM에 추가 |
| MX30LF4G28AD-TI | 3V/3.3V operation for compatibility with various systems | Macronix International | 7,575 | BOM에 추가 |
| RMLV1616AGSA-5S2#AA0 | 3V SRAM Module with 16MB Capacity | Renesas | 2,086 | BOM에 추가 |
| K9F2G08U0C-SIB0000 | Reliable and efficient SLC NAND Flash component featuring ns read access time and operating voltage | Samsung Electronics | 9,137 | BOM에 추가 |
| MT29F2G08ABAEAWP-IT | 2 gigabit capacity | Micron Technology | 9,946 | BOM에 추가 |
| TC58TEG5DCJTA00 | Flash memory device with 4 gigabit capacity and 8-bit organization, packaged in a PDSO48 form factor | KIOXIA | 9,484 | BOM에 추가 |
| MT29F2G08AACWP:C | Parallel interface with a capacity of 256M x 8 bits | Micron Technology | 9,163 | BOM에 추가 |
| MT29F16G08FAAWC:A | Operating voltage of 3.3V for efficient power consumption | Micron Technology | 8,465 | BOM에 추가 |
| IS61WV102416BLL-10TI | Low-power, low-voltage memory solution for efficient system design | Integrated Silicon Solution Inc | 9,142 | BOM에 추가 |
| K9F2G08U0C-SIB000 | Ultra-reliable x bit configuration ensures secure data preservation | Samsung Electronics | 7,585 | BOM에 추가 |
| MD2811-D32-V3 | Flash Memory Drive, CMOS, PDSO48, 20 X 12 MM, 1.30 MM HEIGHT, TSOP1-48 | Western Digital | 5,761 | BOM에 추가 |
| MT29F2G08ABAFAWP:F | Micron Technology | 7,283 | BOM에 추가 | |
| MX29LV320DBTI-70G | Lead-free and RoHS compliant | Macronix International | 2,294 | BOM에 추가 |
| H27U1G8F2BTR-BC | A versatile component for various electronic devices | Sk Hynix Inc | 3,080 | BOM에 추가 |
| MT29F32G08CBADBWPR:D | High-speed RAM chip | Micron Technology | 5,660 | BOM에 추가 |
| H27U1G8F2BTRBC | A versatile component for various electronic devices | Sk Hynix Inc | 7,206 | BOM에 추가 |
| MT29F2G08ABAEAWP | Robust and reliable non-volatile memory for industrial us | Micron | 6,805 | BOM에 추가 |
| MT28F800B5WG-8B | Ultra-fast data access for real-time processin | Micron Technology | 5,063 | BOM에 추가 |
| AT28C64B-15TU | Advanced high-density storage solution for modern applications | Microchip Technology | 7,195 | BOM에 추가 |
| TC58NVG2S3ETA00BBH | Industrial-grade parallel interface NAND flash with robust performance | Toshiba | 4,418 | BOM에 추가 |
| K9K8G08U0B-PCB0000 | High-capacity storage for demanding applications: 1G x 8/2G x 8 Bit NAND Flash Memory | Samsung Electronics | 7,088 | BOM에 추가 |
| K6X1008T2D-PF70T00 | The KT-PFT is a premium SRAM solution for demanding applications requiring rapid access to large amounts of memory | Samsung Electronics | 6,277 | BOM에 추가 |
| K6X1008C2D-PF55T00 | Scalable architecture allows for easy integration into a wide range of systems and application | Samsung Electronics | 3,228 | BOM에 추가 |
| K6X1008C2D-PF55000 | Compact and fast asynchronous SRAM chip for demanding systems (66 characters) | Samsung Electronics | 4,454 | BOM에 추가 |
| K9WAG08U1D-SCB0000 | High-capacity flash memory for data storage and retrieva | Samsung Electronics | 6,908 | BOM에 추가 |
| K9F5608U0D-PCB0T00 | Compact 48-pin TSOP-I package design for space-saving applications | Samsung Electronics | 5,377 | BOM에 추가 |
| MT29F8G08ABACAWP:C TR | FLASH - NAND Memory IC 8Gbit Parallel 48-TSOP I | Micron Technology | 3,735 | BOM에 추가 |
| MT29F8G08ABABAWP:B TR | FLASH - NAND Memory IC 8Gbit Parallel 48-TSOP I | Micron Technology | 4,756 | BOM에 추가 |
| K6T1008C2E-TB55000 | SRAM Chip Async Single 5V 1M-bit 128K x 8 55ns 32-Pin TSOP-I Tray | Samsung Electronics | 2,913 | BOM에 추가 |
| K6T1008C2E-TF70T00 | SRAM Chip Async Single 5V 1M-bit 128K x 8 70ns 32-Pin TSOP-I T/R | Samsung Electronics | 4,686 | BOM에 추가 |
| K9F5608U0D-PIB0T000 | SLC NAND Flash Parallel 3.3V 256M-bit 32M x 8 15us 48-Pin TSOP-I T/R | Samsung Electronics | 5,937 | BOM에 추가 |
| K9F2808U0C-YCB000 | SLC NAND Flash Parallel 3.3V 128M-bit 16M x 8 48-Pin TSOP-I Tray | Samsung Electronics | 2,218 | BOM에 추가 |
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