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TO-263-3
(총 363개 부품)제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
---|---|---|---|---|
IXTA36N30P | N-channel MOSFET with a 300V rating and 36A current capacity | IXYS | 8,530 | BOM에 추가 |
IXTA06N120P | N-channel 1.2KV MOSFET with 0.6A rating in D2PAK package | IXYS | 9,458 | BOM에 추가 |
IPB09N03LA | N-Channel MOSFET Transistor, TO-263 | Infineon | 9,458 | BOM에 추가 |
ISL9N302AS3ST | ISL9N302AS3ST is a robust N-Channel Power MOSFET designed to handle currents up to 75A and voltages of 30V, featuring a low on-resistance of 0 | ROCHESTER ELECTRONICS LLC | 7,229 | BOM에 추가 |
IRF644NS | N-channel MOSFET rated for 250 volts with a maximum current of 14 amps | Vishay | 9,458 | BOM에 추가 |
IRF3710ZSPBF | D2PAK-packaged N-type MOSFET with a maximum voltage rating of 100V and current handling capacity of 59A | Infineon | 9,458 | BOM에 추가 |
IRF3205ZSPBF | Enhanced power efficiency with a channel resistance of 6.5 milliohms | Infineon Technologies | 8,085 | BOM에 추가 |
FDB7045L | MOSFET Transistor, N-Channel, TO-263AB - Product Description: | onsemi | 6,813 | BOM에 추가 |
IRF3704S | The IRF3704S MOSFET: Empowering electronic systems with superior conductivity and efficiency | Infineon | 9,458 | BOM에 추가 |
IRFS4321PBF | Transistor N-channel MOSFET with a 150V voltage rating and 85A current rating packaged in a D2PAK tube with 3 pins and 2 tabs | INFINEON TECHNOLOGIES AG | 8,781 | BOM에 추가 |
FDB6030BL | Power Field-Effect Transistor with model number FDB6030BL | onsemi | 9,384 | BOM에 추가 |
FDB8874 | Bulk packaging on tape and reel | onsemi | 9,330 | BOM에 추가 |
FDB6676 | TO-263AB package with a power dissipation of 93W | onsemi | 9,458 | BOM에 추가 |
BTS117TC | HITFET power distribution power switch ICs | INFINEON | 7,077 | BOM에 추가 |
AUIRFS4310Z | This MOSFET features a low on-resistance of 6mOhm and can handle up to 127A of current | Infineon | 9,458 | BOM에 추가 |
AUIRLS3036 | AUIRLS3036: N-channel Silicon MOSFET for Automotive Applications, 60V, 270A, D2PAK Package | Infineon | 9,458 | BOM에 추가 |
IPB65R150CFDA | Description of TO-263-3 MOSFETs ROHS Product IPB65R150CFDA | Infineon Technologies Corporation | 2,952 | BOM에 추가 |
SUM85N03-06P | 30V N-Channel MOSFET with 175°C Maximum Temperature Rating | vishay | 9,716 | BOM에 추가 |
SUM110N04-03 | The MOSFET model SUM110N04-03 is no longer available; transition to SUM110N04-2m7H-E3 | Vishay | 6,011 | BOM에 추가 |
IPB108N15N3 G | Robust and reliable metal-oxide semiconductor FET with high thermal resistanc | Infineon | 9,458 | BOM에 추가 |
SUM40N15-38 | MOSFET discontinued - Recommended replacement is SUM40N15-38-E3 | Vishay | 9,458 | BOM에 추가 |
LM1117SX-ADJ | LM1117SX-ADJ is an adjustable positive LDO regulator with a dropout voltage of 1.3V and an output voltage range from 1.25V to 13.8V | Texas Instruments | 8,458 | BOM에 추가 |
IPB65R190CFDA | Tape and reel packaged N-channel automotive MOSFET, rated for 650V and 17.5A, housed in a D2PAK package with 3 pins (2+Tab) | Infineon Technologies Corporation | 3,347 | BOM에 추가 |
IPB65R110CFDA | High current rating of 31.2A and low on-resistance of 110mΩ at 10V | Infineon Technologies Corporation | 3,386 | BOM에 추가 |
IPB120N10S4-05 | Reliable and compact N-channel MOSFET device with 100V operating voltage and 120A current handling capability for automotive systems | Infineon Technologies Corporation | 3,571 | BOM에 추가 |
SUM65N20-30-E3 | High-power electronic component | Vishay | 9,458 | BOM에 추가 |
SUM80090E-GE3 | A robust N-channel MOSFET rated at 150V and 128A, enclosed in a D2PAK package | Vishay | 9,458 | BOM에 추가 |
SUM110P06-07L | 110A of current capacity and 60V voltage rating | Vishay | 6,387 | BOM에 추가 |
SUM45N25-58 | 5N25-58, SUM45N25-58-E3 replacement required | Vishay | 8,080 | BOM에 추가 |
IPB60R180P7ATMA1 | 600V N-channel MOSFET with 18A current rating and D2PAK packaging | Infineon | 9,458 | BOM에 추가 |
IPB60R280P7ATMA1 | High-Efficiency MOSFET for Low-Power Applications | Infineon | 9,458 | BOM에 추가 |
IPB073N15N5ATMA1 | Unipolar transistor suitable for DC-DC converters, motor control, and mor | Infineon | 9,458 | BOM에 추가 |
IRFS3306PBF | 60V, 160A power MOSFET in D2PAK packaging | Infineon | 8,380 | BOM에 추가 |
SPB03N60S5 | 3-pin TO-263 package, 600V, 3.2A, 1.4ohm | Infineon | 9,458 | BOM에 추가 |
SPB11N60S5 | D2PAK-2 packaged 600V N-Channel 11A MOSFET from CoolMOS S5 series | Infineon | 9,159 | BOM에 추가 |
IPB120P04P4L03ATMA1 | Optimized P-Channel MOSFET for robust and reliable operation | Infineon | 9,458 | BOM에 추가 |
AUIRFS4410Z | High-power MOSFET designed for automotive use, with a voltage rating of 100V and current rating of 97A | Infineon | 9,458 | BOM에 추가 |
IPB65R045C7 | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | Infineon | 5,086 | BOM에 추가 |
IPB80N06S2L-05 | N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2 | Infineon | 8,791 | BOM에 추가 |
IPB120N06S4-H1 | Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Infineon | 5,006 | BOM에 추가 |
FDB33N25 | Power MOSFET, N-Channel, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK | onsemi | 7,661 | BOM에 추가 |
FQB5N90 | Power MOSFET, N-Channel, QFET®, 900 V, 5.4 A, 2.3 Ω, D2PAK | onsemi | 7,572 | BOM에 추가 |
IKB20N60H3 | IGBT Trench Field Stop 600 V 40 A 170 W Surface Mount PG-TO263-3 | Infineon | 9,458 | BOM에 추가 |
IPB017N08N5 | MOSFET N-Ch 80V 120A D2PAK-2 | Infineon Technologies Corporation | 2,608 | BOM에 추가 |
STB10N95K5 | N-Channel 950 V 8A (Tc) 130W (Tc) Surface Mount TO-263 (D2PAK) | STMicroelectronics | 9,458 | BOM에 추가 |
STB45N40DM2AG | N-Channel 400 V 38A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK) | STMicroelectronics | 9,458 | BOM에 추가 |
SUM110P04-04L-E3 | Power Field-Effect Transistor, 110A I(D), 40V, 0.0042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Vishay | 9,458 | BOM에 추가 |
STB40NF10T4 | Mosfet Transistor, N Channel, 40 A, 100 V, 28 Mohm, 10 V, 1.7 V |Stmicroelectronics STB40NF10T4 | STMICROELECTRONICS | 7,295 | BOM에 추가 |
SUM75N06-09L-E3 | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 | Vishay | 8,421 | BOM에 추가 |
NTB45N06LT4G | NTB45N06LT4G N-channel MOSFET Transistor, 45 A, 60 V, 3-Pin D2PAK | ON Semiconductor NTB45N06LT4G | onsemi | 8,275 | BOM에 추가 |
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