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TO-252-3
(총 833개 부품)제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
---|---|---|---|---|
AUIRLR3114Z | Featuring a DPAK package with a 3-pin configuration and 2 tabs | Infineon | 9,458 | BOM에 추가 |
AUIRFR5305TRL | Automotive-grade MOSFET with P-channel configuration, designed with HEXFET technology for -55V operation and a low on-resistance of 65 milliohms | Infineon | 9,458 | BOM에 추가 |
AUIRFR4105 | AUIRFR4105 MOSFET from Infineon - N-channel, 20A, 27A, 55V HEXFET, 3-Pin DPAK | INFINEON TECHNOLOGIES AG | 7,731 | BOM에 추가 |
BAJ2CC0FP-E2 | 1A TO-252 package for compact design requirements | ROHM Semiconductor | 9,007 | BOM에 추가 |
BA17815FP-E2 | BA17815FP-E2 is a standard 15V positive regulator with a maximum output current of 1A in a 3-pin TO-252 package on tape and reel | ROHM Semiconductor | 9,203 | BOM에 추가 |
AP1117D33 | High-Precision Voltage Regulators | INTEGRATED CIRCUIT TECHNOLOGY CORP | 8,431 | BOM에 추가 |
AP1084D33G-13 | Low dropout voltage regulator | Diodes Incorporated | 9,458 | BOM에 추가 |
AP1117D33LA | Low Dropout Voltage Regulator AP1117D33LA outputs a stable 3.3V with a maximum dropout voltage of 1.3V | Diodes Incorporated | 9,458 | BOM에 추가 |
AP1117D33G-13 | Low Drop Out Linear Regulator by Diodes Inc | Diodes Incorporated | 9,458 | BOM에 추가 |
AP7363-33D-13 | Regulator with 1.5A output and minimal power consumption | Diodes Incorporated | 9,458 | BOM에 추가 |
2SB1184TLQ | 3A Collector Current, 50V Collector-Emitter Breakdown Voltage | ROHM CO LTD | 6,423 | BOM에 추가 |
BUK9277-55A | Precision control and monitoring for optimal power flow management | NXP Semiconductor | 2,694 | BOM에 추가 |
TSM1N60LCP | High voltage 1A N-Channel MOSFET | Taiwan Semiconductor | 9,458 | BOM에 추가 |
TS2940CP33 | Three-terminal regulator with a dropout voltage as low as 0.3V, suitable for voltage regulation in various applications | Taiwan Semiconductor | 8,346 | BOM에 추가 |
STD15NF10 | MOSFET Power Transistor, N-CHANNEL Silicon, with a Drain-Source On-Resistance of 0 | STMicroelectronics | 8,836 | BOM에 추가 |
MTD20P06HDL | Low noise and high efficiency for advanced audio amplifier desig | onsemi | 9,458 | BOM에 추가 |
LM1117IDTX-ADJ | LM1117IDTX-ADJ is an adjustable positive LDO regulator with a dropout voltage of 1.4V | Texas Instruments | 6,086 | BOM에 추가 |
LD29080DT33 | LD29080DT33 is a stable LDO voltage regulator | STMicroelectronics | 9,496 | BOM에 추가 |
IPD60R380P6 | N-type MOSFET IPD60R380P6, featuring a 600V voltage threshold and supporting currents up to 10.6A, housed in DPAK-2 packaging | Infineon | 7,095 | BOM에 추가 |
IPD5N25S3-430 | High-quality TO-MOSFETs for reliable power managemen | Infineon | 9,458 | BOM에 추가 |
BUK9230-100B | Power MOSFET with 100V Voltage Rating and 47A Current Capability | nexperia | 6,572 | BOM에 추가 |
BUK9226-75A | N-channel MOSFET BUK9226-75A | nexperia | 5,534 | BOM에 추가 |
BUK9214-30A | 30V 63A N-channel Silicon MOSFET for Automotive Applications, DPAK | nexperia | 7,645 | BOM에 추가 |
BUK7227-100B | N-channel power transistor | NXP SEMICONDUCTORS | 8,773 | BOM에 추가 |
BTS3046SDR | Durable and efficient MOSFET ideal for power circuitry | INFINEON TECHNOLOGIES AG | 5,785 | BOM에 추가 |
AUIRFR3710ZTRL | N-channel silicon power MOSFET for automotive applications | Infineon | 9,458 | BOM에 추가 |
BTS3104SDL | Comes in a 3-pin DPAK package with an additional tab | INFINEON | 5,946 | BOM에 추가 |
BAJ0CC0FP-E2 | Positive Linear Regulator | ROHM Semiconductor | 8,408 | BOM에 추가 |
SUD06N10-225L-E3 | 8-SUD20N10-66L-GE3 SUD06N10-225L-E3 | Vishay | 9,642 | BOM에 추가 |
TK8P25DA | TK8P25DA: N-Channel MOSFET Transistor" | toshiba | 5,349 | BOM에 추가 |
AZ2185D-ADJTRG1 | Adjustable LDO Regulator 3-Pin | Diodes Incorporated | 9,458 | BOM에 추가 |
SUD40N04-10A | MOSFET designed for 40V operation with a maximum current rating of 40A, delivering a power dissipation of 71W | Vishay | 9,458 | BOM에 추가 |
TJ40S04M3L(T6L1,NQ | P-Channel 40V 40A 3-Pin Power MOSFET | Toshiba | 9,458 | BOM에 추가 |
SUD50P04-13L-E3 | Efficiently Designed FET for Power Control and Management | Vishay Siliconix | 8,695 | BOM에 추가 |
SUD50N03-11 | N-Channel Silicon Metal-oxide Semiconductor FET | Vishay | 9,458 | BOM에 추가 |
IRLR120NPBF | IRLR120NPBF MOSFET has an on-state resistance of 185mΩ at 6A and 10V | Infineon | 7,912 | BOM에 추가 |
IPD65R420CFDA | High-power switching device for demanding applicatio | Infineon Technologies Corporation | 3,722 | BOM에 추가 |
IPD65R660CFDA | IPD65R660CFDA is a ROHS-compliant semiconductor device suitable for a variety of applications requiring high voltage and current capabilities | Infineon Technologies Corporation | 2,653 | BOM에 추가 |
IRFS7537PBF | N-channel power MOSFET | Infineon | 9,458 | BOM에 추가 |
DMP3028LK3-13 | Power Field-Effect Transistor with 27A I(D) and 30V voltage rating, featuring a low on-resistance of 0 | Diodes Incorporated | 9,458 | BOM에 추가 |
2SAR572DGTL | With a TO-252 package and 3+Tab-Pins, the ROHM 2SAR572DGTL PNP Transistor can manage currents of 5 A at -30 V | ROHM Semiconductor | 9,406 | BOM에 추가 |
SUD50P08-25L-BE3 | P-Channel MOSFET with 80V Rating and 17A Drain-Source Current | Vishay | 9,458 | BOM에 추가 |
SUD09P10-195-BE3 | Product SUD09P10-195-BE3 boasts specifications of -100V voltage rating, 8 | Vishay | 9,458 | BOM에 추가 |
SUD15N15-95 | 15A 150V MOSFET capable of dissipating 62W of power | vishay | 8,020 | BOM에 추가 |
SUD40N10-25 | Premium N-channel MOSFET for extreme environments and high-power handling | Vishay | 6,466 | BOM에 추가 |
IPD70R900P7SAUMA1 | Power transistor in DPAK package with 700V voltage capacity and 6A current capability | INFINEON TECHNOLOGIES AG | 6,639 | BOM에 추가 |
IPD70R360P7SAUMA1 | High-power MOSFET with N-channel design and 700V voltage capability, 12.5A current handling, in TO-252 package | Infineon | 9,458 | BOM에 추가 |
IRFR1018EPBF | Compact N-channel MOSFET for automotive and industrial application | Infineon | 9,458 | BOM에 추가 |
IRFR3806PBF | DPAK 60V 43A N-Channel MOSFET | Infineon | 9,458 | BOM에 추가 |
AUIRFZ24NS | AUIRFZ24NS is a high-quality, reliable N-channel transistor for automotive use | Infineon | 9,458 | BOM에 추가 |
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