이 웹사이트는 쿠키를 사용합니다. 이 사이트를 이용함으로써 귀하는 쿠키 사용에 동의하게 됩니다. 자세한 내용은 다음을 참조하세요. 개인 정보 정책.
TO-247-4
(총 102개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| STC04IE170HP | TO-247 Tube Emitter Switched Bipolar Transistor (4-Pin, 4+Tab) | STMicroelectronics | 8,792 | BOM에 추가 |
| STC04IE170HV | ESBT Gate Driver for 1700V Switching Bipolar Transistors at 4A | STMicroelectronics | 9,458 | BOM에 추가 |
| C3M0016120K | G3 Silicon Carbide MOSFET 1200V with 16mOhm resistance | Wolfspeed | 9,458 | BOM에 추가 |
| SCT3080KRC14 | SCT3080KRC14 is a N Channel MOSFET capable of handling 1 | Rohm Semiconductor | 8,867 | BOM에 추가 |
| UF3SC065007K4S | Features: High voltage rating of 650V, current handling capacity of 120A, low on-resistance of 9mΩ at 50A | Qorvo | 5,321 | BOM에 추가 |
| SCT4026DRHRC15 | Robust and reliable power electronics component for demanding application | Rohm Semiconductor | 9,754 | BOM에 추가 |
| UF3C065040K4S | UF3C065040K4S stands out with its impressive specifications | Qorvo | 9,860 | BOM에 추가 |
| IGZ100N65H5 | High-power IGBT transistor for industrial applications | Infineon Technologies | 7,309 | BOM에 추가 |
| IMZ120R045M1 | Silicon Carbide MOSFET 1200V SiC Trench | Infineon | 8,130 | BOM에 추가 |
| IPZ65R045C7 | MOSFET N-Ch 700V 46A TO247-4 | Infineon | 6,654 | BOM에 추가 |
| UJ4C075018K4S | Power Field-Effect Transistor, | Qorvo | 9,458 | BOM에 추가 |
| UJ4C075060K4S | Power Field-Effect Transistor, | Qorvo | 9,458 | BOM에 추가 |
| G2R50MT33K | Silicon Carbide MOSFET N-Channel Enhancement Mode | GeneSiC Semiconductor | 6,489 | BOM에 추가 |
| G3R45MT17K | Silicon Carbide MOSFET N Channel Enhancement Mode | GeneSiC Semiconductor | 9,458 | BOM에 추가 |
| G3R40MT12K | Silicon Carbide MOSFET N Channel Enhancement Mode | GeneSiC Semiconductor | 5,213 | BOM에 추가 |
| STC03DE170HV | Bipolar Transistors - BJT Hybrid emiter switch bipolar transistor | STMicroelectronics | 5,904 | BOM에 추가 |
| FCH023N65S3L4 | N-Channel 650 V 75A (Tc) 595W (Tc) Through Hole TO-247-4 | onsemi | 9,458 | BOM에 추가 |
| NTH4L045N065SC1 | N-Channel 650 V 55A (Tc) 187W (Tc) Through Hole TO-247-4L | onsemi | 9,458 | BOM에 추가 |
| NTH4L040N120SC1 | N-Channel 1200 V 58A (Tc) 319W (Tc) Through Hole TO-247-4L | onsemi | 9,458 | BOM에 추가 |
| NTH4L022N120M3S | N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L | onsemi | 9,458 | BOM에 추가 |
| UJ4SC075009K4S | N-Channel 750 V 106A (Tc) 375W (Tc) Through Hole TO-247-4 | Qorvo | 6,620 | BOM에 추가 |
| IPZ60R040C7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 2,176 | BOM에 추가 |
| C3M0030090K | Trans MOSFET N-CH SiC 900V 73A 4-Pin(4+Tab) TO-247 | Wolfspeed | 9,458 | BOM에 추가 |
| IPZ65R065C7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 3,399 | BOM에 추가 |
| IPZ65R019C7 | MOSFET N-Ch 700V 75A TO247-4 | Infineon Technologies Corporation | 2,700 | BOM에 추가 |
| C3M0040120K | Trans MOSFET N-CH SiC 1.2KV 66A 4-Pin(4+Tab) TO-247 | Wolfspeed | 9,458 | BOM에 추가 |
| STW57N65M5-4 | N-Channel 650 V 42A (Tc) 250W (Tc) Through Hole TO-247-4L | STMicroelectronics | 9,458 | BOM에 추가 |
| C3M0075120K | Silicon Carbide MOSFET rated at 1200 volts with a resistance of 75 milliohms | Wolfspeed | 7,035 | BOM에 추가 |
| NTH4L080N120SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L | Onsemi | 4,738 | BOM에 추가 |
| UF3C065080K4S | Trans MOSFET N-CH SiC 650V 31A 4-Pin(4+Tab) TO-247 | Qorvo | 7,145 | BOM에 추가 |
| UF4SC120030K4S | N-Channel 1200 V 53A (Tc) 341W (Tc) Through Hole TO-247-4 | Qorvo | 7,554 | BOM에 추가 |
| UJ4C075023K4S | N-Channel 750 V 66A (Tc) 306W (Tc) Through Hole TO-247-4 | Qorvo | 9,192 | BOM에 추가 |
| GP2T080A120H | N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-4 | SemiQ | 6,473 | BOM에 추가 |
| GP2T040A120H | N-Channel 1200 V 63A (Tc) 322W (Tc) Through Hole TO-247-4 | SemiQ | 8,243 | BOM에 추가 |
| STGW100H65FB2-4 | IGBT Trench Field Stop 650 V 145 A 441 W Through Hole TO-247-4 | STMicroelectronics | 6,585 | BOM에 추가 |
| STGW75H65DFB2-4 | IGBT Trench Field Stop 650 V 115 A 357 W Through Hole TO-247-4 | STMicroelectronics | 9,372 | BOM에 추가 |
| STGW60H65DFB-4 | IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-4 | STMicroelectronics | 9,674 | BOM에 추가 |
| SICW080N120Y4-BP | Trans MOSFET N-CH SiC 1.2KV 39A 4-Pin(4+Tab) TO-247 Tube | Micro Commercial Components (MCC) | 9,812 | BOM에 추가 |
| FGH75T65SQDTL4 | IGBT Trench Field Stop 650 V 150 A Through Hole TO-247-4 | onsemi | 5,505 | BOM에 추가 |
| NTH4LN019N65S3H | N-Channel 650 V 75A (Tc) 625W (Tc) Through Hole TO-247-4 | onsemi | 7,246 | BOM에 추가 |
| IPZ60R060C7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 2,213 | BOM에 추가 |
| IKZA40N120CS7XKSA1 | IGBT Transistors | Infineon | 9,458 | BOM에 추가 |
| NGTB40N120FL2WAG | Trans IGBT Chip N-CH 1200V 160A 536W 4-Pin(4+Tab) TO-247 Tube | onsemi | 8,945 | BOM에 추가 |
| STW48N60M6-4 | MOSFET N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET | STMicroelectronics | 6,513 | BOM에 추가 |
| STW48N60M2-4 | MOSFET N-channel 600 V, 60 mOhm typ 42 A MDmesh M2 Power MOSFET | STMicroelectronics | 8,295 | BOM에 추가 |
| IPZ65R095C7 | N-Channel 650 V 24A (Tc) 128W (Tc) Through Hole PG-TO247-4-1 | Infineon Technologies Corporation | 3,845 | BOM에 추가 |
| MSC060SMA070B4 | N-Channel 700 V 39A (Tc) 143W (Tc) Through Hole TO-247-4 | Microchip | 6,597 | BOM에 추가 |
| IMZA65R083M1HXKSA1 | Silicon Carbide Power Mosfet | Infineon | 9,458 | BOM에 추가 |
| IKY75N120CS6XKSA1 | Trans IGBT Chip N-CH 1200V 150A 880W 4-Pin(4+Tab) TO-247 Tube | Infineon | 9,458 | BOM에 추가 |
| STW70N60M2-4 | N-Channel 600 V 68A (Tc) 450W (Tc) Through Hole TO-247-4 | STMicroelectronics | 8,746 | BOM에 추가 |
기타 패키지