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TO-220FP-3
(총 131개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| D8LC40 | Advanced phase, element design for demanding application | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 5,701 | BOM에 추가 |
| D15LC20U | Single-Phase Rectifier Diode with 2 Elements, Rated at 7 | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 8,518 | BOM에 추가 |
| BYW51FP-200 | Rectifier Diode Switching 200V 20A 35ns 3-Pin(3+Tab) TO-220FPAB Tube | STMicroelectronics | 9,458 | BOM에 추가 |
| BYW29F-200 | Rectifiers RO 511-BYW29FP-200, featuring the product code BYW29F-200 | stmicroelectronics | 7,583 | BOM에 추가 |
| 2SK2350 | Versatile transistor design ideal for a wide range of electronic projects requiring power switching capabilities | Toshiba | 9,458 | BOM에 추가 |
| 2SK3568 | Low resistance and high current capability for reliable operati | Toshiba | 3,672 | BOM에 추가 |
| 2SK3568(Q) | Reliable performance in various circuit designs | toshiba | 5,423 | BOM에 추가 |
| 2SA1931(Q) | TO-220NIS-packaged Bipolar Junction Transistor (BJT) | Toshiba | 7,810 | BOM에 추가 |
| 2SK3662(F) | Silicon N-Channel MOSFET with TO-220NIS packaging, rated for 60V and 35A | Toshiba | 9,458 | BOM에 추가 |
| IKA08N65F5 | TO-220-3 IGBTs ROHS: Introducing IKA08N65F5 | Infineon Technologies | 7,838 | BOM에 추가 |
| IRGIB15B60KD1P | Packaged in a tube for protection and easy handling | Infineon | 9,458 | BOM에 추가 |
| IKA10N65ET6 | IKA10N65ET6 IGBTs in TO-220-3 package, meeting ROHS standards | infineon | 8,733 | BOM에 추가 |
| STP4NC60FP | Silicon Semiconductor Technology | stmicroelectronics | 7,530 | BOM에 추가 |
| STP4NB80FP | N-channel silicon power MOSFET rated at 4A and 800V, packaged in TO-220AB or TO-220FP, with a resistance of 3.3 ohms | STMicroelectronics | 6,199 | BOM에 추가 |
| STP36NE06FP | STP36NE06FP is a N-CHANNEL Si POWER MOSFET, featuring a current rating of 20A, voltage rating of 60V, and a low on-state resistance of 0 | stmicroelectronics | 8,443 | BOM에 추가 |
| STP16NE06FP | 0V 11A N-CHANNEL Si MOSFET | stmicroelectronics | 9,212 | BOM에 추가 |
| SF20L60U-7600 | SF20L60U-7600, identified as a 20A diode switch, is structured with a 2-pin (2+tab) design and encapsulated in the FTO-220 format | Shindengen | 9,458 | BOM에 추가 |
| SF10L60U-7600 | 600 VRM Rectifiers | shindengen | 7,997 | BOM에 추가 |
| 2SK2391(F) | MOSFET 2SK2391(F) - Lead-Free, 220NIS2 PLN, Active | toshiba | 6,853 | BOM에 추가 |
| 2SJ349(F) | Si 60V 20A 3-Pin P-Channel Transistor MOSFET | Toshiba | 7,957 | BOM에 추가 |
| SPA08N50C3 | SPA08N50C3 is a MOSFET featuring a maximum voltage rating of 560V, a current rating of 7.6A, and a low on-resistance of 600mΩ at 10V | Infineon | 9,458 | BOM에 추가 |
| IPA50R399CP | N-channel MOSFET transistor IPA50R399CP | Infineon | 9,458 | BOM에 추가 |
| STP60NF06FP | N-Channel 60 V 30A (Tc) 30W (Tc) Through Hole TO-220FP | STMicroelectronics | 9,458 | BOM에 추가 |
| STF20N90K5 | N-Channel 900 V 20A (Tc) 40W (Tc) Through Hole TO-220FP | STMicroelectronics | 9,458 | BOM에 추가 |
| R6015ANX | Bulk-packaged N-channel 600V 15A MOSFET Transistor | Rohm Semiconductor | 7,994 | BOM에 추가 |
| IRG4IBC10UDPBF | IGBT Transistors 600V UltraFast 8-60kHz | Infineon | 9,458 | BOM에 추가 |
| D10LC40 | Rectifiers with low power dissipation | Shindengen | 9,666 | BOM에 추가 |
| D5LC20U | phase, containing 2 elements, capable of handling 2 | Shindengen | 9,548 | BOM에 추가 |
| D8LD20U | Diode Rectifiers Low Loss | Shindengen | 6,996 | BOM에 추가 |
| SF10LC20U | Diode with Low Loss Rectifiers | Shindengen | 9,973 | BOM에 추가 |
| STP8NC50FP | MOSFET N-Ch 500 Volt 8 Amp | STMICROELECTRONICS | 8,004 | BOM에 추가 |
| STP14NF12FP | Trans MOSFET N-CH 120V 8.5A 3-Pin(3+Tab) TO-220FP Tube | STMicroelectronics | 9,458 | BOM에 추가 |
| FQPF5N50C | N-Channel 500 V 5A (Tc) 38W (Tc) Through Hole TO-220F-3 | onsemi | 9,458 | BOM에 추가 |
| STPR1020CF | Rectifiers 2X5 Amp 200 Volt | STMICROELECTRONICS | 6,096 | BOM에 추가 |
| STP8NM60FP | Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FP Tube | STMicroelectronics | 9,458 | BOM에 추가 |
| STP4NK50ZFP | Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220FP Tube | STMicroelectronics | 9,458 | BOM에 추가 |
| IPA80R650CE | MOSFET CONSUMER | Infineon Technologies Corporation | 3,701 | BOM에 추가 |
| IPA80R460CE | MOSFET CONSUMER | Infineon Technologies Corporation | 2,074 | BOM에 추가 |
| IPA083N10N5 | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 3,157 | BOM에 추가 |
| IRLIZ34G | Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 | Vishay | 8,302 | BOM에 추가 |
| IRLI540G | Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220 Full-Pak | Vishay | 6,094 | BOM에 추가 |
| IRLI530G | N-Channel 100 V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3 | Vishay | 5,438 | BOM에 추가 |
| 2SK3563 | MOSFET N-Ch 500V 5A Rdson 1.5 Ohm | Toshiba | 9,458 | BOM에 추가 |
| IPAW60R190CE | MOSFET CONSUMER | Infineon Technologies Corporation | 2,463 | BOM에 추가 |
| IRFI4321 | MOSFET | Infineon | 7,868 | BOM에 추가 |
| IRF630MFP | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220FP Tube | STMICROELECTRONICS | 6,673 | BOM에 추가 |
| TK13A65U | MOSFET Super Junction Power Mosfet | Toshiba | 8,604 | BOM에 추가 |
| 2STP535FP | Bipolar (BJT) Transistor NPN - Darlington 180 V 8 A 37 W Through Hole TO-220FP | STMicroelectronics | 9,458 | BOM에 추가 |
| IPA65R125C7 | 650V 10A 125mΩ@10V,8.9A 32W 4V@440uA N Channel TO-220FP-3 MOSFETs ROHS | Infineon Technologies Corporation | 2,339 | BOM에 추가 |
| IPA60R120C7 | TO-220 MOSFETs ROHS | Infineon Technologies Corporation | 2,014 | BOM에 추가 |
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