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SOT-227
(총 114개 부품)| 제조업체부품번호 | 설명 | 제조업체 | 재고 | 작업 |
|---|---|---|---|---|
| GE200NB60S | Isotropic PowerMESHⓈ IGBT offering exceptional speed, efficiency, and ruggedness for demanding electrical applications | St | 2,228 | BOM에 추가 |
| VS-UFB80FA20 | Diode Array 2 Independent 200 V 40A (DC) Chassis Mount SOT-227-4, miniBLOC | Vishay | 9,460 | BOM에 추가 |
| VS-UFB230FA60 | VS-UFB230FA60 High Voltage Dual Diode | Vishay | 5,362 | BOM에 추가 |
| VS-UFB280FA20 | Insulated Ultrafast Rectifier Module, 280 A | Vishay | 9,963 | BOM에 추가 |
| UFB200FA40P | Technical Specification: UFB200FA40P features rectification capacity up to 400 volts with a current handling capability of 240 amps | Vishay | 6,996 | BOM에 추가 |
| APT50MC120JCU2 | SiC MOSFET and diode power module for boost chopper circuits | Microchip | 9,458 | BOM에 추가 |
| G3R20MT17N | SOT227 encapsulated N-channel silicon carbide metal-oxide-semiconductor field-effect transistor capable of handling 100A | GeneSiC Semiconductor | 9,458 | BOM에 추가 |
| VS-FB180SA10P | Transistor MOSFET for Switching Applications | Vishay General Semiconductor - Diodes Division | 6,981 | BOM에 추가 |
| UFB200FA20 | Chassis Mount Diode Array with Two Independent Diodes, SOT-227-4 Package, Ideal for High Power Applications | VISHAY SEMICONDUCTORS | 5,397 | BOM에 추가 |
| UFB200FA20P | Satisfy your needs with this equivalent product replacemen | vishay | 7,738 | BOM에 추가 |
| HFA120FA60 | Product Specification: 600V 60A HEXFRED Rectifiers in SOT-227 Package | Vishay | 9,838 | BOM에 추가 |
| FA57SA50LCP | Low-ohmic, high-voltage transistor for precision switching | Vishay | 9,243 | BOM에 추가 |
| FA38SA50LC | High Voltage Single N-Channel HEXFET Power MOSFET in SOT-227 Package | Vishay | 8,361 | BOM에 추가 |
| APT6015JVFR | Designed for high-speed and high-power operations, the APT6015JVFR N-channel MOSFET offers unmatched versatility | MICROSEMI CORP | 7,800 | BOM에 추가 |
| DBA200YA40 | Semiconductor Modules 400V 200A | SanRex | 9,458 | BOM에 추가 |
| VS-UFB200FA40P | Two independent diodes in a single packa | Vishay General Semiconductor - Diodes Division | 5,957 | BOM에 추가 |
| HFA80FA120 | Single-Phase Rectifier Diode, 2-Element, 40A, Silicon, SOT-227 Package, 4 Pins | Vishay | 6,086 | BOM에 추가 |
| GA100XCP12-227 | High-power switching solution for industrial applications | GeneSiC Semiconductor | 9,458 | BOM에 추가 |
| APT100MC120JCU2 | SOT-227 Packaged Silicon Carbide N-Channel MOSFET with 1.2KV Voltage Rating | Microchip | 9,458 | BOM에 추가 |
| DBA200WA60 | High-powered Discrete Semiconductor Modules with 400V and 200A capabilities | SanRex | 9,458 | BOM에 추가 |
| G3R20MT12N | Power Field-Effect Transistor, | GeneSiC Semiconductor | 9,458 | BOM에 추가 |
| VS-UFB200FA20P | RECTIFIER MODULE, 200V, 120A, SOT-227 | Vishay General Semiconductor - Diodes Division | 9,973 | BOM에 추가 |
| UFB200FA40 | Double Diode Rectifiers 400V 200A Ultrafast SOT-227 | Vishay | 6,934 | BOM에 추가 |
| GD2X100MPS12N | Silicon Carbide Schottky Diode | GeneSiC Semiconductor | 9,849 | BOM에 추가 |
| UFB200FA60P | 108ns 4-Pin SOT-227 Switching Rectifier Diode 126A | Vishay | 9,458 | BOM에 추가 |
| VS-FA72SA50LC | N-Channel Transistor MOSFET for high-speed switching and amplification need | Vishay | 6,388 | BOM에 추가 |
| UFB120FA20P | Rectifiers 200 Volt 120 Amp | Vishay | 9,458 | BOM에 추가 |
| UFL200FA60P | Rectifiers 60 Amp 200 Volt | Vishay | 9,458 | BOM에 추가 |
| UFL60FA60P | Rectifiers 600 Volt 60 Amp Dual 300A IFSM | Vishay | 9,458 | BOM에 추가 |
| GD2X75MPS17N | Silicon Carbide Schottky Diode | GeneSiC Semiconductor | 7,524 | BOM에 추가 |
| GD2X30MPS12N | Silicon Carbide Schottky Diode | GeneSiC Semiconductor | 6,328 | BOM에 추가 |
| GD2X30MPS06N | Silicon Carbide Schottky Diode | GeneSiC Semiconductor | 7,842 | BOM에 추가 |
| GD2X150MPS06N | 650V 300A SOT-227 SiC Schottky MPS | GeneSiC Semiconductor | 8,820 | BOM에 추가 |
| GSA100AA60 | IGBT Module Single 600 V 100 A 500 W Chassis Mount SOT-227 | SanRex | 5,414 | BOM에 추가 |
| GSA75AA120 | IGBT Module Single 1200 V 75 A 500 W Chassis Mount SOT-227 | SanRex | 6,790 | BOM에 추가 |
| MBR2X060A080 | Schottky Rectifier Module Type 120 A | GeneSiC Semiconductor | 7,453 | BOM에 추가 |
| MBR2X060A060 | Schottky Rectifier Module Type 120 A | GeneSiC Semiconductor | 7,420 | BOM에 추가 |
| MBR2X060A045 | Rectifier Diode Schottky 45V 120A 4-Pin SOT-227 | GeneSiC Semiconductor | 7,943 | BOM에 추가 |
| MBR2X050A200 | Rectifier Diode Schottky 200V 100A 4-Pin SOT-227 | GeneSiC Semiconductor | 6,848 | BOM에 추가 |
| MBR2X050A150 | Diode Array 2 Independent 150 V 50A Chassis Mount SOT-227-4, miniBLOC | GeneSiC Semiconductor | 9,890 | BOM에 추가 |
| MBR2X050A120 | Schottky Rectifier Module Type 100 A | GeneSiC Semiconductor | 8,294 | BOM에 추가 |
| MBR2X050A100 | Schottky Rectifier 100 V | GeneSiC Semiconductor | 7,924 | BOM에 추가 |
| MBR2X050A080 | Schottky Rectifier Module Type 100 A | GeneSiC Semiconductor | 8,369 | BOM에 추가 |
| MBR2X050A060 | Schottky Rectifier Module Type 100 A | GeneSiC Semiconductor | 7,120 | BOM에 추가 |
| MBR2X050A045 | Schottky Rectifier Module Type 100 A | GeneSiC Semiconductor | 7,741 | BOM에 추가 |
| MBR2X030A100 | Rectifier Diode Schottky 100V 60A 4-Pin SOT-227 | GeneSiC Semiconductor | 9,684 | BOM에 추가 |
| MBR2X030A060 | Schottky Rectifier Module Type 60 A | GeneSiC Semiconductor | 8,951 | BOM에 추가 |
| MBR2X030A045 | Rectifier Diode Schottky 45V 60A 4-Pin SOT-227 | GeneSiC Semiconductor | 7,804 | BOM에 추가 |
| MBR2X160A150 | Schottky Rectifier Module Type 320 A | GeneSiC Semiconductor | 5,190 | BOM에 추가 |
| MBR2X160A080 | Schottky Rectifier Module Type 320 A | GeneSiC Semiconductor | 5,598 | BOM에 추가 |
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